DE69633049D1 - Nichtflüchtige speicherzellen, die nur positive ladungsträger zum speichern der daten gebrauchen - Google Patents

Nichtflüchtige speicherzellen, die nur positive ladungsträger zum speichern der daten gebrauchen

Info

Publication number
DE69633049D1
DE69633049D1 DE69633049T DE69633049T DE69633049D1 DE 69633049 D1 DE69633049 D1 DE 69633049D1 DE 69633049 T DE69633049 T DE 69633049T DE 69633049 T DE69633049 T DE 69633049T DE 69633049 D1 DE69633049 D1 DE 69633049D1
Authority
DE
Germany
Prior art keywords
storing
data
volatile storage
storage cells
positive carrier
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69633049T
Other languages
English (en)
Other versions
DE69633049T2 (de
Inventor
Jonathan Lin
Stewart Logie
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Advanced Micro Devices Inc
Original Assignee
Advanced Micro Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Micro Devices Inc filed Critical Advanced Micro Devices Inc
Publication of DE69633049D1 publication Critical patent/DE69633049D1/de
Application granted granted Critical
Publication of DE69633049T2 publication Critical patent/DE69633049T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0433—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and one or more separate select transistors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0441—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing multiple floating gate devices, e.g. separate read-and-write FAMOS transistors with connected floating gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
DE69633049T 1995-07-03 1996-06-18 Nichtflüchtige speicherzellen, die nur positive ladungsträger zum speichern der daten gebrauchen Expired - Lifetime DE69633049T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US08/497,992 US5742542A (en) 1995-07-03 1995-07-03 Non-volatile memory cells using only positive charge to store data
US497992 1995-07-03
PCT/US1996/010535 WO1997002572A1 (en) 1995-07-03 1996-06-18 Non-volatile memory cells using only positive charge to store data

Publications (2)

Publication Number Publication Date
DE69633049D1 true DE69633049D1 (de) 2004-09-09
DE69633049T2 DE69633049T2 (de) 2005-01-27

Family

ID=23979174

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69633049T Expired - Lifetime DE69633049T2 (de) 1995-07-03 1996-06-18 Nichtflüchtige speicherzellen, die nur positive ladungsträger zum speichern der daten gebrauchen

Country Status (4)

Country Link
US (1) US5742542A (de)
EP (1) EP0782748B1 (de)
DE (1) DE69633049T2 (de)
WO (1) WO1997002572A1 (de)

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US6268623B1 (en) 1997-03-20 2001-07-31 Altera Corporation Apparatus and method for margin testing single polysilicon EEPROM cells
US6781883B1 (en) 1997-03-20 2004-08-24 Altera Corporation Apparatus and method for margin testing single polysilicon EEPROM cells
US5905675A (en) * 1997-03-20 1999-05-18 Altera Corporation Biasing scheme for reducing stress and improving reliability in EEPROM cells
US5896315A (en) * 1997-04-11 1999-04-20 Programmable Silicon Solutions Nonvolatile memory
US6624467B1 (en) * 1997-11-19 2003-09-23 Altera Corporation EEPROM active area castling
US5959889A (en) * 1997-12-29 1999-09-28 Cypress Semiconductor Corp. Counter-bias scheme to reduce charge gain in an electrically erasable cell
US6404006B2 (en) 1998-12-01 2002-06-11 Vantis Corporation EEPROM cell with tunneling across entire separated channels
US6214666B1 (en) 1998-12-18 2001-04-10 Vantis Corporation Method of forming a non-volatile memory device
US5969992A (en) * 1998-12-21 1999-10-19 Vantis Corporation EEPROM cell using P-well for tunneling across a channel
US6232631B1 (en) 1998-12-21 2001-05-15 Vantis Corporation Floating gate memory cell structure with programming mechanism outside the read path
US6294810B1 (en) 1998-12-22 2001-09-25 Vantis Corporation EEPROM cell with tunneling at separate edge and channel regions
US6157568A (en) * 1998-12-23 2000-12-05 Vantis Corporation Avalanche programmed floating gate memory cell structure with program element in first polysilicon layer
US6064595A (en) * 1998-12-23 2000-05-16 Vantis Corporation Floating gate memory apparatus and method for selected programming thereof
US6294809B1 (en) 1998-12-28 2001-09-25 Vantis Corporation Avalanche programmed floating gate memory cell structure with program element in polysilicon
US6294811B1 (en) 1999-02-05 2001-09-25 Vantis Corporation Two transistor EEPROM cell
US6172392B1 (en) 1999-03-29 2001-01-09 Vantis Corporation Boron doped silicon capacitor plate
DE19951818C2 (de) * 1999-10-27 2001-11-29 Micronas Gmbh Elektrisch lösch- und programmierbare nichtflüchtige Speicheranordnung
US6208559B1 (en) 1999-11-15 2001-03-27 Lattice Semiconductor Corporation Method of operating EEPROM memory cells having transistors with thin gate oxide and reduced disturb
JP4530464B2 (ja) * 2000-03-09 2010-08-25 ルネサスエレクトロニクス株式会社 半導体集積回路
US6515912B1 (en) * 2000-04-14 2003-02-04 Koninklijke Philips Electronics N.V. Semiconductor device
KR100393130B1 (ko) * 2001-03-14 2003-07-31 대주전자재료 주식회사 리튬을 포함하는 백색 발광다이오드용 알루미늄산이트륨황색 형광체 및 그 제조방법
US6788574B1 (en) 2001-12-06 2004-09-07 Virage Logic Corporation Electrically-alterable non-volatile memory cell
US7130213B1 (en) 2001-12-06 2006-10-31 Virage Logic Corporation Methods and apparatuses for a dual-polarity non-volatile memory cell
US6992938B1 (en) 2001-12-06 2006-01-31 Virage Logic Corporation Methods and apparatuses for test circuitry for a dual-polarity non-volatile memory cell
US6842375B1 (en) 2001-12-06 2005-01-11 Virage Logic Corporation Methods and apparatuses for maintaining information stored in a non-volatile memory cell
US7069522B1 (en) * 2003-06-02 2006-06-27 Virage Logic Corporation Various methods and apparatuses to preserve a logic state for a volatile latch circuit
US7219324B1 (en) * 2003-06-02 2007-05-15 Virage Logic Corporation Various methods and apparatuses to route multiple power rails to a cell
US6963222B1 (en) * 2003-12-16 2005-11-08 Xilinx, Inc. Non-volatile product term (pterm) cell
JP4215018B2 (ja) * 2005-03-29 2009-01-28 セイコーエプソン株式会社 不揮発性半導体記憶装置
US7989849B2 (en) * 2006-11-15 2011-08-02 Synopsys, Inc. Apparatuses and methods for efficient power rail structures for cell libraries
US8320191B2 (en) 2007-08-30 2012-11-27 Infineon Technologies Ag Memory cell arrangement, method for controlling a memory cell, memory array and electronic device
US8723177B2 (en) * 2011-12-06 2014-05-13 Globalfoundries Inc. Electrical test structure for devices employing high-k dielectrics or metal gates
US9847133B2 (en) * 2016-01-19 2017-12-19 Ememory Technology Inc. Memory array capable of performing byte erase operation
US10818785B2 (en) * 2017-12-04 2020-10-27 Ecole Polytechnique Federale De Lausanne (Epfl) Sensing device for sensing minor charge variations

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4460979A (en) * 1982-05-19 1984-07-17 Honeywell Inc. Memory cell
US4616245A (en) * 1984-10-29 1986-10-07 Ncr Corporation Direct-write silicon nitride EEPROM cell
JPS61228673A (ja) * 1985-04-02 1986-10-11 Nec Corp 不揮発性半導体メモリセル
JPS63138598A (ja) * 1986-11-28 1988-06-10 Mitsubishi Electric Corp 不揮発性半導体記憶装置
GB2199184B (en) * 1986-12-19 1990-01-31 Nat Semiconductor Corp High reliability single-poly eeprom cell
JPH0640589B2 (ja) * 1987-03-16 1994-05-25 株式会社東芝 不揮発性半導体記憶装置
JP2688492B2 (ja) * 1987-06-19 1997-12-10 アドバンスト・マイクロ・デバイシズ・インコーポレイテッド 電気的消去可能プログラマブルリードオンリメモリ
US4924278A (en) * 1987-06-19 1990-05-08 Advanced Micro Devices, Inc. EEPROM using a merged source and control gate
US4885719A (en) * 1987-08-19 1989-12-05 Ict International Cmos Technology, Inc. Improved logic cell array using CMOS E2 PROM cells
US5005155A (en) * 1988-06-15 1991-04-02 Advanced Micro Devices, Inc. Optimized electrically erasable PLA cell for minimum read disturb
US5170373A (en) * 1989-10-31 1992-12-08 Sgs-Thomson Microelectronics, Inc. Three transistor eeprom cell
US5331590A (en) * 1991-10-15 1994-07-19 Lattice Semiconductor Corporation Single poly EE cell with separate read/write paths and reduced product term coupling

Also Published As

Publication number Publication date
EP0782748B1 (de) 2004-08-04
WO1997002572A1 (en) 1997-01-23
US5742542A (en) 1998-04-21
EP0782748A1 (de) 1997-07-09
DE69633049T2 (de) 2005-01-27

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition