DE69630535D1 - Edelsteine aus siliziumkarbid - Google Patents

Edelsteine aus siliziumkarbid

Info

Publication number
DE69630535D1
DE69630535D1 DE69630535T DE69630535T DE69630535D1 DE 69630535 D1 DE69630535 D1 DE 69630535D1 DE 69630535 T DE69630535 T DE 69630535T DE 69630535 T DE69630535 T DE 69630535T DE 69630535 D1 DE69630535 D1 DE 69630535D1
Authority
DE
Germany
Prior art keywords
gemstones
silicon carbide
gems
crystals
crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69630535T
Other languages
English (en)
Other versions
DE69630535T2 (de
Inventor
Eric Hunter
Dirk Verbiest
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Charles and Colvard Ltd
Original Assignee
Charles and Colvard Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Charles and Colvard Ltd filed Critical Charles and Colvard Ltd
Publication of DE69630535D1 publication Critical patent/DE69630535D1/de
Application granted granted Critical
Publication of DE69630535T2 publication Critical patent/DE69630535T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Adornments (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Inorganic Fibers (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Disintegrating Or Milling (AREA)
  • Laminated Bodies (AREA)
DE69630535T 1995-08-31 1996-08-27 Edelsteine aus siliziumkarbid Expired - Lifetime DE69630535T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US521635 1995-08-31
US08/521,635 US5762896A (en) 1995-08-31 1995-08-31 Silicon carbide gemstones
PCT/US1996/013760 WO1997009470A2 (en) 1995-08-31 1996-08-27 Silicon carbide gemstones

Publications (2)

Publication Number Publication Date
DE69630535D1 true DE69630535D1 (de) 2003-12-04
DE69630535T2 DE69630535T2 (de) 2004-08-05

Family

ID=24077509

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69630535T Expired - Lifetime DE69630535T2 (de) 1995-08-31 1996-08-27 Edelsteine aus siliziumkarbid

Country Status (16)

Country Link
US (2) US5762896A (de)
EP (1) EP0853690B1 (de)
JP (1) JP3422422B2 (de)
KR (1) KR100331201B1 (de)
CN (1) CN1093085C (de)
AT (1) ATE253132T1 (de)
AU (1) AU710841B2 (de)
BR (1) BR9610393A (de)
CA (1) CA2230262C (de)
DE (1) DE69630535T2 (de)
DK (1) DK0853690T3 (de)
ES (1) ES2207682T3 (de)
HK (1) HK1015423A1 (de)
PT (1) PT853690E (de)
RU (1) RU2156330C2 (de)
WO (1) WO1997009470A2 (de)

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US6048813A (en) * 1998-10-09 2000-04-11 Cree, Inc. Simulated diamond gemstones formed of aluminum nitride and aluminum nitride: silicon carbide alloys
US6045613A (en) * 1998-10-09 2000-04-04 Cree, Inc. Production of bulk single crystals of silicon carbide
US6527854B1 (en) * 1999-06-16 2003-03-04 Mark A. Prelas Method for contact diffusion of impurities into diamond and other crystalline structures and products
US20030017932A1 (en) * 2001-07-17 2003-01-23 Vandenbiesen Russell P. Method for making synthetic gems comprising elements recovered from complete or partial human or animal remains and the product thereof
WO2004030984A2 (en) * 2002-09-30 2004-04-15 Next Safety, Inc. Roadway and vehicular-mounted reflectors incorporating a field of discrete crystal reflectors and retroreflectors
US20050139395A1 (en) * 2003-10-09 2005-06-30 Farzad Shaygan Drill bit with a moissanite (silicon carbide) cutting element
US20070110657A1 (en) * 2005-11-14 2007-05-17 Hunter Charles E Unseeded silicon carbide single crystals
KR100808477B1 (ko) * 2006-09-22 2008-03-03 박기환 원석 컨테이너와 강옥 가공장치 및 강옥 가공방법
US8212262B2 (en) 2007-02-09 2012-07-03 Cree, Inc. Transparent LED chip
US20080258130A1 (en) * 2007-04-23 2008-10-23 Bergmann Michael J Beveled LED Chip with Transparent Substrate
US20090056374A1 (en) * 2007-08-31 2009-03-05 Abate Steven L Gemstone Facet Configuration
DE102008035730B4 (de) * 2007-12-23 2009-10-15 Paul Wild Ohg Verfahren zur Anbringung eines Bearbeitungsstifts an einen zu schleifenden Edelstein sowie Handhabungs- oder Bearbeitungsstift und Messstift zum Durchführen des Verfahrens
US20100272627A1 (en) * 2009-04-23 2010-10-28 Chien-Min Sung Multi-Faceted Diamond and Associated Methods
US20110054104A1 (en) * 2009-08-26 2011-03-03 Chiang-Chung Chang Composite for heat-dissipating film
US20110140034A1 (en) * 2009-08-26 2011-06-16 Chiang-Chung Chang Composite for heat-dissipating film
US20110265616A1 (en) * 2010-04-30 2011-11-03 University Of Pittsburgh-Of The Commonwealth System Of Higher Education Ultra-pure, single-crystal sic cutting tool for ultra-precision machining
RU2434083C1 (ru) 2010-10-28 2011-11-20 Общество С Ограниченной Ответственностью "Гранник" Способ одновременного получения нескольких ограненных драгоценных камней из синтетического карбида кремния - муассанита
CN102198701B (zh) * 2011-05-11 2014-05-14 山东大学 一种刻面碳化硅宝石成品的加工方法
US20130055763A1 (en) * 2011-09-02 2013-03-07 Anthonv Ritchie Hearts & Arrows SiC Gemstone
WO2014051589A1 (en) 2012-09-27 2014-04-03 Empire Technology Development Llc Treatment balloon with beam position detector
CN103320862B (zh) * 2013-06-07 2016-03-30 山东大学 有色碳硅石宝石及其制备方法
CN104241262B (zh) 2013-06-14 2020-11-06 惠州科锐半导体照明有限公司 发光装置以及显示装置
CN114000197A (zh) 2015-09-24 2022-02-01 帕里杜斯有限公司 气相沉积装置以及使用高纯度聚合物衍生的碳化硅的技术
US20170355058A1 (en) * 2016-06-09 2017-12-14 Arshak Isajanyan Multiphase Cutting
US10521536B2 (en) * 2016-11-21 2019-12-31 Synopsys, Inc. RTL verification using computational complexity-based property ranking and scheduling
CN109911899B (zh) * 2019-03-07 2023-01-03 江苏超芯星半导体有限公司 一种无色莫桑石的制备方法
CN110042469B (zh) * 2019-04-29 2021-05-11 南通大学 一种花色碳化硅宝石的制备方法
US11638470B2 (en) 2021-01-12 2023-05-02 Arash Kani Gallium nitride gemstones
JP6903362B1 (ja) 2021-02-05 2021-07-14 株式会社Ｂｒｉｌｌａｒ 合成宝石用結晶体の製造方法

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US2488507A (en) * 1947-08-27 1949-11-15 Linde Air Prod Co Synthetic star rubies and star sapphires, and process for producing same
US2690062A (en) * 1949-12-21 1954-09-28 Union Carbide & Carbon Corp Synthetic corundum crystals and process for making same
US2690630A (en) * 1951-12-28 1954-10-05 Union Carbide & Carbon Corp Producing asteriated corundum crystals
US2913313A (en) * 1956-07-10 1959-11-17 Kempten Elektroschmelz Gmbh Process for manufacturing green silicon carbide
US2941248A (en) * 1958-01-06 1960-06-21 Gen Electric High temperature high pressure apparatus
US2947609A (en) * 1958-01-06 1960-08-02 Gen Electric Diamond synthesis
US2947610A (en) * 1958-01-06 1960-08-02 Gen Electric Method of making diamonds
US3025192A (en) * 1959-01-02 1962-03-13 Norton Co Silicon carbide crystals and processes and furnaces for making them
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US3297407A (en) * 1962-12-10 1967-01-10 Gen Electric Method of growing diamond on a diamond seed crystal
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Also Published As

Publication number Publication date
US5723391A (en) 1998-03-03
CA2230262C (en) 2001-02-13
JPH11507906A (ja) 1999-07-13
RU2156330C2 (ru) 2000-09-20
CA2230262A1 (en) 1997-03-13
ES2207682T3 (es) 2004-06-01
ATE253132T1 (de) 2003-11-15
DK0853690T3 (da) 2004-03-08
JP3422422B2 (ja) 2003-06-30
CN1194623A (zh) 1998-09-30
EP0853690A2 (de) 1998-07-22
HK1015423A1 (en) 1999-10-15
PT853690E (pt) 2004-03-31
WO1997009470A2 (en) 1997-03-13
EP0853690A4 (de) 1998-07-22
US5762896A (en) 1998-06-09
AU710841B2 (en) 1999-09-30
KR100331201B1 (ko) 2002-08-13
CN1093085C (zh) 2002-10-23
DE69630535T2 (de) 2004-08-05
KR19990044250A (ko) 1999-06-25
WO1997009470A3 (en) 1997-04-17
AU6902696A (en) 1997-03-27
BR9610393A (pt) 2000-04-18
EP0853690B1 (de) 2003-10-29

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition