BR9610393A - Gemas de carbeto de silìcio. - Google Patents

Gemas de carbeto de silìcio.

Info

Publication number
BR9610393A
BR9610393A BR9610393-0A BR9610393A BR9610393A BR 9610393 A BR9610393 A BR 9610393A BR 9610393 A BR9610393 A BR 9610393A BR 9610393 A BR9610393 A BR 9610393A
Authority
BR
Brazil
Prior art keywords
gems
silicon carbide
crystals
crystal
tones
Prior art date
Application number
BR9610393-0A
Other languages
English (en)
Inventor
Charles Eric Hunter
Dirk Verbiest
Original Assignee
C3 Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by C3 Inc filed Critical C3 Inc
Publication of BR9610393A publication Critical patent/BR9610393A/pt

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Adornments (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Inorganic Fibers (AREA)
  • Laminated Bodies (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Disintegrating Or Milling (AREA)

Abstract

Patente de Invenção: <B>"GEMAS DE CARBETO DE SILìCIO"<D>. Gemas sintéticas tendo brilhança e dureza extraordinária são formadas a partir de cristais únicos grande de carbeto de silício transluzente de impurezas relativamente baixas de um politipo único que são crescidos em um sistema de sublimação de forno. Os cristais são cortados para formar gemas brutas que são, depois disso, lapidadas para formar gemas acabadas, Uma ampla faixa de cores e de tons está disponível por dopagem seletiva do cristal durante o crescimento. Uma gema incolor é produzida crescendo o cristal não dopado em um sistema substancialmente livre de átomos de impureza indesejados.
BR9610393-0A 1995-08-31 1996-08-27 Gemas de carbeto de silìcio. BR9610393A (pt)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/521,635 US5762896A (en) 1995-08-31 1995-08-31 Silicon carbide gemstones
PCT/US1996/013760 WO1997009470A2 (en) 1995-08-31 1996-08-27 Silicon carbide gemstones

Publications (1)

Publication Number Publication Date
BR9610393A true BR9610393A (pt) 2000-04-18

Family

ID=24077509

Family Applications (1)

Application Number Title Priority Date Filing Date
BR9610393-0A BR9610393A (pt) 1995-08-31 1996-08-27 Gemas de carbeto de silìcio.

Country Status (16)

Country Link
US (2) US5762896A (pt)
EP (1) EP0853690B1 (pt)
JP (1) JP3422422B2 (pt)
KR (1) KR100331201B1 (pt)
CN (1) CN1093085C (pt)
AT (1) ATE253132T1 (pt)
AU (1) AU710841B2 (pt)
BR (1) BR9610393A (pt)
CA (1) CA2230262C (pt)
DE (1) DE69630535T2 (pt)
DK (1) DK0853690T3 (pt)
ES (1) ES2207682T3 (pt)
HK (1) HK1015423A1 (pt)
PT (1) PT853690E (pt)
RU (1) RU2156330C2 (pt)
WO (1) WO1997009470A2 (pt)

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US6045613A (en) * 1998-10-09 2000-04-04 Cree, Inc. Production of bulk single crystals of silicon carbide
US6048813A (en) * 1998-10-09 2000-04-11 Cree, Inc. Simulated diamond gemstones formed of aluminum nitride and aluminum nitride: silicon carbide alloys
US6527854B1 (en) * 1999-06-16 2003-03-04 Mark A. Prelas Method for contact diffusion of impurities into diamond and other crystalline structures and products
US20030017932A1 (en) * 2001-07-17 2003-01-23 Vandenbiesen Russell P. Method for making synthetic gems comprising elements recovered from complete or partial human or animal remains and the product thereof
WO2004030984A2 (en) * 2002-09-30 2004-04-15 Next Safety, Inc. Roadway and vehicular-mounted reflectors incorporating a field of discrete crystal reflectors and retroreflectors
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US20070110657A1 (en) * 2005-11-14 2007-05-17 Hunter Charles E Unseeded silicon carbide single crystals
KR100808477B1 (ko) * 2006-09-22 2008-03-03 박기환 원석 컨테이너와 강옥 가공장치 및 강옥 가공방법
US8212262B2 (en) * 2007-02-09 2012-07-03 Cree, Inc. Transparent LED chip
US20080258130A1 (en) * 2007-04-23 2008-10-23 Bergmann Michael J Beveled LED Chip with Transparent Substrate
US20090056374A1 (en) * 2007-08-31 2009-03-05 Abate Steven L Gemstone Facet Configuration
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US20100272627A1 (en) * 2009-04-23 2010-10-28 Chien-Min Sung Multi-Faceted Diamond and Associated Methods
US20110054104A1 (en) * 2009-08-26 2011-03-03 Chiang-Chung Chang Composite for heat-dissipating film
US20110140034A1 (en) * 2009-08-26 2011-06-16 Chiang-Chung Chang Composite for heat-dissipating film
US20110265616A1 (en) * 2010-04-30 2011-11-03 University Of Pittsburgh-Of The Commonwealth System Of Higher Education Ultra-pure, single-crystal sic cutting tool for ultra-precision machining
RU2434083C1 (ru) * 2010-10-28 2011-11-20 Общество С Ограниченной Ответственностью "Гранник" Способ одновременного получения нескольких ограненных драгоценных камней из синтетического карбида кремния - муассанита
CN102198701B (zh) * 2011-05-11 2014-05-14 山东大学 一种刻面碳化硅宝石成品的加工方法
US20130055763A1 (en) * 2011-09-02 2013-03-07 Anthonv Ritchie Hearts & Arrows SiC Gemstone
WO2014051589A1 (en) 2012-09-27 2014-04-03 Empire Technology Development Llc Treatment balloon with beam position detector
CN103320862B (zh) * 2013-06-07 2016-03-30 山东大学 有色碳硅石宝石及其制备方法
CN104241262B (zh) 2013-06-14 2020-11-06 惠州科锐半导体照明有限公司 发光装置以及显示装置
CN114000197A (zh) 2015-09-24 2022-02-01 帕里杜斯有限公司 气相沉积装置以及使用高纯度聚合物衍生的碳化硅的技术
US20170355058A1 (en) * 2016-06-09 2017-12-14 Arshak Isajanyan Multiphase Cutting
US10521536B2 (en) * 2016-11-21 2019-12-31 Synopsys, Inc. RTL verification using computational complexity-based property ranking and scheduling
CN109911899B (zh) * 2019-03-07 2023-01-03 江苏超芯星半导体有限公司 一种无色莫桑石的制备方法
CN110042469B (zh) * 2019-04-29 2021-05-11 南通大学 一种花色碳化硅宝石的制备方法
US11638470B2 (en) 2021-01-12 2023-05-02 Arash Kani Gallium nitride gemstones
JP6903362B1 (ja) * 2021-02-05 2021-07-14 株式会社Ｂｒｉｌｌａｒ 合成宝石用結晶体の製造方法

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Also Published As

Publication number Publication date
WO1997009470A3 (en) 1997-04-17
ES2207682T3 (es) 2004-06-01
DE69630535T2 (de) 2004-08-05
JPH11507906A (ja) 1999-07-13
EP0853690A4 (pt) 1998-07-22
JP3422422B2 (ja) 2003-06-30
DK0853690T3 (da) 2004-03-08
CA2230262C (en) 2001-02-13
CN1194623A (zh) 1998-09-30
EP0853690A2 (en) 1998-07-22
WO1997009470A2 (en) 1997-03-13
HK1015423A1 (en) 1999-10-15
AU6902696A (en) 1997-03-27
EP0853690B1 (en) 2003-10-29
PT853690E (pt) 2004-03-31
US5723391A (en) 1998-03-03
KR100331201B1 (ko) 2002-08-13
DE69630535D1 (de) 2003-12-04
US5762896A (en) 1998-06-09
CA2230262A1 (en) 1997-03-13
CN1093085C (zh) 2002-10-23
RU2156330C2 (ru) 2000-09-20
KR19990044250A (ko) 1999-06-25
AU710841B2 (en) 1999-09-30
ATE253132T1 (de) 2003-11-15

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Legal Events

Date Code Title Description
B06A Patent application procedure suspended [chapter 6.1 patent gazette]
B06A Patent application procedure suspended [chapter 6.1 patent gazette]
B09A Decision: intention to grant [chapter 9.1 patent gazette]
B16A Patent or certificate of addition of invention granted [chapter 16.1 patent gazette]
B25D Requested change of name of applicant approved

Owner name: CHARLES AND COLVARD, LTD. (US)

Free format text: ALTERADO DE: C3, INC.

B25I Requirement for requested change of headquarter

Owner name: CHARLES AND COLVARD, LTD. (US)

Free format text: AFIM DE ATENDER O SOLICITADO NA PETICAO DE ALTERACAO DE NOME E SEDE NO 020080090435/RJ DE 27/06/2008, QUEIRA APRESENTAR A GUIA DE RECOLHIMENTO RELATIVA A ALTERACAO DE SEDE.

B25G Requested change of headquarter approved

Owner name: CHARLES AND COLVARD, LTD. (US)

Free format text: SEDE ALTERADA CONFORME SOLICITADO NA PETICAO NO 020080090435/RJ DE 27/06/2008.

B21A Patent or certificate of addition expired [chapter 21.1 patent gazette]

Free format text: PATENTE EXTINTA EM 27/08/2016