DE69628137T2 - Bildsensor mit organischen und inorganischen passivierungsschichten - Google Patents
Bildsensor mit organischen und inorganischen passivierungsschichten Download PDFInfo
- Publication number
- DE69628137T2 DE69628137T2 DE69628137T DE69628137T DE69628137T2 DE 69628137 T2 DE69628137 T2 DE 69628137T2 DE 69628137 T DE69628137 T DE 69628137T DE 69628137 T DE69628137 T DE 69628137T DE 69628137 T2 DE69628137 T2 DE 69628137T2
- Authority
- DE
- Germany
- Prior art keywords
- organic
- image sensor
- passivation layers
- inorganic passivation
- inorganic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000002161 passivation Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Solid State Image Pick-Up Elements (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GBGB9520791.6A GB9520791D0 (en) | 1995-10-13 | 1995-10-13 | Image sensor |
PCT/IB1996/001066 WO1997014186A1 (en) | 1995-10-13 | 1996-10-10 | Image sensor comprising organic and inorganic passivation layers |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69628137D1 DE69628137D1 (de) | 2003-06-18 |
DE69628137T2 true DE69628137T2 (de) | 2004-01-15 |
Family
ID=10782129
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69628137T Expired - Lifetime DE69628137T2 (de) | 1995-10-13 | 1996-10-10 | Bildsensor mit organischen und inorganischen passivierungsschichten |
Country Status (6)
Country | Link |
---|---|
US (1) | US6034725A (de) |
EP (1) | EP0797845B1 (de) |
JP (1) | JPH10511817A (de) |
DE (1) | DE69628137T2 (de) |
GB (1) | GB9520791D0 (de) |
WO (1) | WO1997014186A1 (de) |
Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4035194B2 (ja) | 1996-03-13 | 2008-01-16 | キヤノン株式会社 | X線検出装置及びx線検出システム |
JPH11307756A (ja) | 1998-02-20 | 1999-11-05 | Canon Inc | 光電変換装置および放射線読取装置 |
JPH11331703A (ja) * | 1998-03-20 | 1999-11-30 | Toshiba Corp | 撮像装置 |
DE19927694C1 (de) * | 1999-06-17 | 2000-11-02 | Lutz Fink | Halbleitersensor mit einer Pixelstruktur |
US20020121605A1 (en) * | 1999-06-17 | 2002-09-05 | Lutz Fink | Semiconductor sensor and method for its wiring |
US6300648B1 (en) * | 1999-12-28 | 2001-10-09 | Xerox Corporation | Continuous amorphous silicon layer sensors using sealed metal back contact |
US6288435B1 (en) * | 1999-12-28 | 2001-09-11 | Xerox Corporation | Continuous amorphous silicon layer sensors using doped poly-silicon back contact |
TW451447B (en) * | 1999-12-31 | 2001-08-21 | Samsung Electronics Co Ltd | Contact structures of wirings and methods for manufacturing the same, and thin film transistor array panels including the same and methods for manufacturing the same |
US6946717B2 (en) * | 2001-01-30 | 2005-09-20 | M/A-Com, Inc. | High voltage semiconductor device |
US6607951B2 (en) * | 2001-06-26 | 2003-08-19 | United Microelectronics Corp. | Method for fabricating a CMOS image sensor |
US6737626B1 (en) * | 2001-08-06 | 2004-05-18 | Pixim, Inc. | Image sensors with underlying and lateral insulator structures |
FR2849272B1 (fr) * | 2002-12-19 | 2005-11-18 | Commissariat Energie Atomique | Dispositif de detection photo-electrique et notamment de rayonnement x ou y |
CN101166996B (zh) * | 2005-02-28 | 2013-04-17 | 先进燃料研究股份有限公司 | 用于辐射检测的装置和方法 |
JP2007101256A (ja) * | 2005-09-30 | 2007-04-19 | Fujifilm Corp | X線撮像装置及びx線ct装置 |
JP5489542B2 (ja) | 2008-07-01 | 2014-05-14 | キヤノン株式会社 | 放射線検出装置及び放射線撮像システム |
TWI424574B (zh) * | 2009-07-28 | 2014-01-21 | Prime View Int Co Ltd | 數位x光探測面板及其製作方法 |
KR101955336B1 (ko) * | 2012-03-13 | 2019-03-07 | 삼성전자주식회사 | 광 센싱 트랜지스터, 이의 제조방법 및 이를 채용한 디스플레이 패널 |
US9520424B2 (en) * | 2012-10-29 | 2016-12-13 | Taiwan Semiconductor Manufacturing Company Limited | Black level correction (BLC) structure |
US9881954B2 (en) * | 2014-06-11 | 2018-01-30 | Semiconductor Energy Laboratory Co., Ltd. | Imaging device |
US10330799B2 (en) | 2014-06-30 | 2019-06-25 | Sharp Kabushiki Kaisha | X-ray image pickup system |
CN105914216B (zh) * | 2016-05-05 | 2019-01-18 | 上海集成电路研发中心有限公司 | 一种图像传感器结构及其制作方法 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6045057A (ja) * | 1983-08-23 | 1985-03-11 | Toshiba Corp | 固体撮像装置の製造方法 |
JPS6218755A (ja) * | 1985-07-18 | 1987-01-27 | Toshiba Corp | 固体撮像装置 |
JPH0785568B2 (ja) * | 1989-04-05 | 1995-09-13 | 富士ゼロックス株式会社 | 密着型イメージセンサ装置 |
NL9100337A (nl) * | 1991-02-26 | 1992-09-16 | Philips Nv | Halfgeleiderinrichting. |
JPH04317373A (ja) * | 1991-04-16 | 1992-11-09 | Semiconductor Energy Lab Co Ltd | 密着型イメージセンサ |
JPH04317372A (ja) * | 1991-04-17 | 1992-11-09 | Nec Corp | 半導体記憶装置 |
US5254480A (en) * | 1992-02-20 | 1993-10-19 | Minnesota Mining And Manufacturing Company | Process for producing a large area solid state radiation detector |
US5233181A (en) * | 1992-06-01 | 1993-08-03 | General Electric Company | Photosensitive element with two layer passivation coating |
DE4227096A1 (de) * | 1992-08-17 | 1994-02-24 | Philips Patentverwaltung | Röntgenbilddetektor |
US5399884A (en) * | 1993-11-10 | 1995-03-21 | General Electric Company | Radiation imager with single passivation dielectric for transistor and diode |
US5619033A (en) * | 1995-06-07 | 1997-04-08 | Xerox Corporation | Layered solid state photodiode sensor array |
US5859463A (en) * | 1996-12-23 | 1999-01-12 | General Electric Company | Photosensitive imager contact pad structure |
-
1995
- 1995-10-13 GB GBGB9520791.6A patent/GB9520791D0/en active Pending
-
1996
- 1996-10-10 DE DE69628137T patent/DE69628137T2/de not_active Expired - Lifetime
- 1996-10-10 WO PCT/IB1996/001066 patent/WO1997014186A1/en active IP Right Grant
- 1996-10-10 EP EP96931929A patent/EP0797845B1/de not_active Expired - Lifetime
- 1996-10-10 JP JP9514877A patent/JPH10511817A/ja not_active Withdrawn
- 1996-10-15 US US08/731,623 patent/US6034725A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
EP0797845B1 (de) | 2003-05-14 |
GB9520791D0 (en) | 1995-12-13 |
US6034725A (en) | 2000-03-07 |
DE69628137D1 (de) | 2003-06-18 |
JPH10511817A (ja) | 1998-11-10 |
WO1997014186A1 (en) | 1997-04-17 |
EP0797845A1 (de) | 1997-10-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE69628137D1 (de) | Bildsensor mit organischen und inorganischen passivierungsschichten | |
DE69733946D1 (de) | Farbsensor mit luminanzpriorität | |
DE19680088T1 (de) | Magnetsensor mit verbesserter Kalibrierbarkeit | |
DE19680089T1 (de) | Magnetsensor mit verbesserter Kalibrierbarkeit | |
DE19580095T1 (de) | Sensor mit magnetoresistiven Elementen | |
DE69637258D1 (de) | Elektrooptischer Sensor | |
DE69412721D1 (de) | Infrarot-Sensoreinrichtung | |
DE69806291T2 (de) | Kochgerät mit Infrarotsensor | |
DE69829889D1 (de) | Sicherheitsvorrichtung mit mehreren Sicherheitsmerkmalen | |
DE69614363D1 (de) | Photoelastischer neuraler drehmomentsensor | |
DE69626248D1 (de) | Lager mit Sensor | |
DE59605586D1 (de) | Winkelsensor | |
DE69636471D1 (de) | Flache Bildaufnahmevorrichtung mit gemeinsamer gemusterter Elektrode | |
DE69730402D1 (de) | Bildsensor mit verbessertem Kontrast | |
DE69415270T2 (de) | Ultraviolett Sensor mit Ortsäuflösung | |
DE69630680D1 (de) | Schichtlage mit integriertem verschluss | |
DE69637576D1 (de) | Sensoranordnung mit überlappenden Detektionsstrecken | |
DE69627970D1 (de) | Drucksensor mit rechteckigen Schichten und senkrechtem Wandler | |
DE69631509D1 (de) | Infrarotsensor | |
DE69633363D1 (de) | Sensorelement | |
DE69620655D1 (de) | Sensorelement | |
KR970045282U (ko) | 초전형 적외선 센서 | |
DE59507908D1 (de) | Sensorring | |
DE69623782T2 (de) | Kraftsensor mit segmentären elektroden | |
DE739039T1 (de) | Pixelstruktur, Bildsensor mit diesem Pixel, Struktur und entsprechende zugehörige Schaltung |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |