DE69633363D1 - Sensorelement - Google Patents

Sensorelement

Info

Publication number
DE69633363D1
DE69633363D1 DE69633363T DE69633363T DE69633363D1 DE 69633363 D1 DE69633363 D1 DE 69633363D1 DE 69633363 T DE69633363 T DE 69633363T DE 69633363 T DE69633363 T DE 69633363T DE 69633363 D1 DE69633363 D1 DE 69633363D1
Authority
DE
Germany
Prior art keywords
sensor element
sensor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69633363T
Other languages
English (en)
Other versions
DE69633363T2 (de
Inventor
Warren B Jackson
David K Biegelsen
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Xerox Corp
Original Assignee
Xerox Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Xerox Corp filed Critical Xerox Corp
Publication of DE69633363D1 publication Critical patent/DE69633363D1/de
Application granted granted Critical
Publication of DE69633363T2 publication Critical patent/DE69633363T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14665—Imagers using a photoconductor layer
DE69633363T 1995-06-07 1996-06-05 Sensorelement Expired - Lifetime DE69633363T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/479,874 US5567971A (en) 1995-06-07 1995-06-07 Variable size light sensor element
US479874 1995-06-07

Publications (2)

Publication Number Publication Date
DE69633363D1 true DE69633363D1 (de) 2004-10-21
DE69633363T2 DE69633363T2 (de) 2005-02-17

Family

ID=23905797

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69633363T Expired - Lifetime DE69633363T2 (de) 1995-06-07 1996-06-05 Sensorelement

Country Status (4)

Country Link
US (1) US5567971A (de)
EP (1) EP0747973B1 (de)
JP (1) JP4065338B2 (de)
DE (1) DE69633363T2 (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5804815A (en) * 1996-07-05 1998-09-08 Sandia Corporation GaAs photoconductive semiconductor switch
US5898196A (en) 1997-10-10 1999-04-27 International Business Machines Corporation Dual EPI active pixel cell design and method of making the same
US6016011A (en) * 1999-04-27 2000-01-18 Hewlett-Packard Company Method and apparatus for a dual-inlaid damascene contact to sensor
US6248992B1 (en) * 1999-06-18 2001-06-19 Sandia Corporation High gain photoconductive semiconductor switch having tailored doping profile zones
US6770886B1 (en) * 2000-10-10 2004-08-03 Therma-Wave, Inc. Detector-shield assembly for X-ray reflectometric system
US20030007089A1 (en) * 2001-01-12 2003-01-09 Anteon Corporation Opto-electronic video compression system
US7233263B2 (en) * 2002-01-08 2007-06-19 Xerox Corporation Analog actuation allocation structure with many actuators
KR100643305B1 (ko) * 2005-02-14 2006-11-10 삼성전자주식회사 컨볼루션 커널을 이용한 라인 패턴 처리 방법 및 장치
JP5792923B2 (ja) * 2009-04-20 2015-10-14 キヤノン株式会社 放射線撮像装置及び放射線撮像システム、それらの制御方法及びそのプログラム
GB2579396A (en) 2018-11-30 2020-06-24 Emberion Oy P-I-N photodetector

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5254480A (en) * 1992-02-20 1993-10-19 Minnesota Mining And Manufacturing Company Process for producing a large area solid state radiation detector
JPH05335605A (ja) * 1992-05-28 1993-12-17 Mitsubishi Electric Corp 有機イメージセンサ

Also Published As

Publication number Publication date
EP0747973B1 (de) 2004-09-15
JPH08334566A (ja) 1996-12-17
DE69633363T2 (de) 2005-02-17
EP0747973A2 (de) 1996-12-11
US5567971A (en) 1996-10-22
JP4065338B2 (ja) 2008-03-26
EP0747973A3 (de) 1998-07-29

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition