DE69625679T2 - Verfahren zur herstellung einer halbleiteranordnung - Google Patents
Verfahren zur herstellung einer halbleiteranordnungInfo
- Publication number
- DE69625679T2 DE69625679T2 DE69625679T DE69625679T DE69625679T2 DE 69625679 T2 DE69625679 T2 DE 69625679T2 DE 69625679 T DE69625679 T DE 69625679T DE 69625679 T DE69625679 T DE 69625679T DE 69625679 T2 DE69625679 T2 DE 69625679T2
- Authority
- DE
- Germany
- Prior art keywords
- producing
- semiconductor arrangement
- semiconductor
- arrangement
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32139—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer using masks
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
- H01L21/0276—Photolithographic processes using an anti-reflective coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
- H01L21/3083—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/144—Hydrogen peroxide treatment
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP95202907 | 1995-10-26 | ||
PCT/IB1996/001105 WO1997015946A1 (en) | 1995-10-26 | 1996-10-18 | Method of manufacturing a semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69625679D1 DE69625679D1 (de) | 2003-02-13 |
DE69625679T2 true DE69625679T2 (de) | 2003-11-06 |
Family
ID=8220773
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69625679T Expired - Fee Related DE69625679T2 (de) | 1995-10-26 | 1996-10-18 | Verfahren zur herstellung einer halbleiteranordnung |
Country Status (7)
Country | Link |
---|---|
US (1) | US5759747A (de) |
EP (1) | EP0800704B1 (de) |
JP (1) | JPH10513013A (de) |
KR (1) | KR980701134A (de) |
DE (1) | DE69625679T2 (de) |
TW (1) | TW322596B (de) |
WO (1) | WO1997015946A1 (de) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6428894B1 (en) * | 1997-06-04 | 2002-08-06 | International Business Machines Corporation | Tunable and removable plasma deposited antireflective coatings |
US6383723B1 (en) | 1998-08-28 | 2002-05-07 | Micron Technology, Inc. | Method to clean substrate and improve photoresist profile |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4176003A (en) * | 1978-02-22 | 1979-11-27 | Ncr Corporation | Method for enhancing the adhesion of photoresist to polysilicon |
US4910122A (en) * | 1982-09-30 | 1990-03-20 | Brewer Science, Inc. | Anti-reflective coating |
WO1990013911A1 (en) * | 1989-05-07 | 1990-11-15 | Tadahiro Ohmi | Method of forming oxide film |
JP3416163B2 (ja) * | 1992-01-31 | 2003-06-16 | キヤノン株式会社 | 半導体基板及びその作製方法 |
US5286608A (en) * | 1992-05-18 | 1994-02-15 | Industrial Technology Research Institute | TiOx as an anti-reflection coating for metal lithography |
WO1993024860A1 (en) * | 1992-06-02 | 1993-12-09 | Mitsubishi Kasei Corporation | Composition for forming anti-reflection film on resist and pattern formation method |
-
1996
- 1996-10-18 DE DE69625679T patent/DE69625679T2/de not_active Expired - Fee Related
- 1996-10-18 JP JP9516429A patent/JPH10513013A/ja not_active Abandoned
- 1996-10-18 KR KR1019970704549A patent/KR980701134A/ko active IP Right Grant
- 1996-10-18 EP EP96933559A patent/EP0800704B1/de not_active Expired - Lifetime
- 1996-10-18 WO PCT/IB1996/001105 patent/WO1997015946A1/en active IP Right Grant
- 1996-10-28 US US08/738,562 patent/US5759747A/en not_active Expired - Fee Related
- 1996-11-11 TW TW085113779A patent/TW322596B/zh active
Also Published As
Publication number | Publication date |
---|---|
TW322596B (de) | 1997-12-11 |
EP0800704B1 (de) | 2003-01-08 |
WO1997015946A1 (en) | 1997-05-01 |
JPH10513013A (ja) | 1998-12-08 |
KR980701134A (ko) | 1998-04-30 |
US5759747A (en) | 1998-06-02 |
EP0800704A1 (de) | 1997-10-15 |
DE69625679D1 (de) | 2003-02-13 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8320 | Willingness to grant licences declared (paragraph 23) | ||
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |