DE69615450D1 - Optischer Trigger-Thyristor und Verfahren zur Herstellung - Google Patents

Optischer Trigger-Thyristor und Verfahren zur Herstellung

Info

Publication number
DE69615450D1
DE69615450D1 DE69615450T DE69615450T DE69615450D1 DE 69615450 D1 DE69615450 D1 DE 69615450D1 DE 69615450 T DE69615450 T DE 69615450T DE 69615450 T DE69615450 T DE 69615450T DE 69615450 D1 DE69615450 D1 DE 69615450D1
Authority
DE
Germany
Prior art keywords
manufacturing
optical trigger
trigger thyristor
thyristor
optical
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69615450T
Other languages
English (en)
Other versions
DE69615450T2 (de
Inventor
Katsumi Satoh
Kenji Ohta
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Application granted granted Critical
Publication of DE69615450D1 publication Critical patent/DE69615450D1/de
Publication of DE69615450T2 publication Critical patent/DE69615450T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/111—Devices sensitive to infrared, visible or ultraviolet radiation characterised by at least three potential barriers, e.g. photothyristors
    • H01L31/1113—Devices sensitive to infrared, visible or ultraviolet radiation characterised by at least three potential barriers, e.g. photothyristors the device being a photothyristor

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Thyristors (AREA)
  • Light Receiving Elements (AREA)
DE69615450T 1995-05-17 1996-05-15 Optischer Trigger-Thyristor und Verfahren zur Herstellung Expired - Lifetime DE69615450T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11842395A JP3338234B2 (ja) 1995-05-17 1995-05-17 光トリガサイリスタ及びその製造方法

Publications (2)

Publication Number Publication Date
DE69615450D1 true DE69615450D1 (de) 2001-10-31
DE69615450T2 DE69615450T2 (de) 2002-06-13

Family

ID=14736281

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69615450T Expired - Lifetime DE69615450T2 (de) 1995-05-17 1996-05-15 Optischer Trigger-Thyristor und Verfahren zur Herstellung

Country Status (4)

Country Link
US (1) US5804841A (de)
EP (1) EP0743687B1 (de)
JP (1) JP3338234B2 (de)
DE (1) DE69615450T2 (de)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6770911B2 (en) * 2001-09-12 2004-08-03 Cree, Inc. Large area silicon carbide devices
US8536617B2 (en) 2011-12-16 2013-09-17 General Electric Company Optically triggered semiconductor device and method for making the same
RU171465U1 (ru) * 2016-12-12 2017-06-01 Вячеслав Васильевич Елисеев Реверсивно-включаемый динистор с обратной проводимостью

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3832732A (en) * 1973-01-11 1974-08-27 Westinghouse Electric Corp Light-activated lateral thyristor and ac switch
JPS5295990A (en) * 1976-02-09 1977-08-12 Hitachi Ltd Photo receiver of semiconductor
JPS5735372A (en) * 1980-08-11 1982-02-25 Mitsubishi Electric Corp Photothyristor
DE3048381C2 (de) * 1980-12-22 1985-09-05 Messerschmitt-Bölkow-Blohm GmbH, 8000 München Dünnschicht-Solarzelle
JPS5895866A (ja) * 1981-12-02 1983-06-07 Hitachi Ltd 光トリガ・スイツチング素子
JPS6180855A (ja) * 1984-09-28 1986-04-24 Hitachi Ltd 自己保護型半導体装置
JPS62291172A (ja) * 1986-06-11 1987-12-17 Sharp Corp 大電力用フオトサイリスタ
DE59010429D1 (de) * 1990-03-12 1996-08-29 Siemens Ag Thyristor mit reflexionsarmer Lichtzündstruktur
JP2661341B2 (ja) * 1990-07-24 1997-10-08 三菱電機株式会社 半導体受光素子
DE4215378C1 (de) * 1992-05-11 1993-09-30 Siemens Ag Thyristor mit Durchbruchbereich

Also Published As

Publication number Publication date
DE69615450T2 (de) 2002-06-13
JPH08316455A (ja) 1996-11-29
EP0743687A3 (de) 1997-04-16
JP3338234B2 (ja) 2002-10-28
US5804841A (en) 1998-09-08
EP0743687B1 (de) 2001-09-26
EP0743687A2 (de) 1996-11-20

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)