DE69607637D1 - 4,4'-(1-(4-(1-(4-hydroxyphenyl)-1-methylethyl)phenyl)ethylidene)bisphenol mit niediegem gehalt an metallionen und damit hergestellten photoresistszusammensetzungen - Google Patents

4,4'-(1-(4-(1-(4-hydroxyphenyl)-1-methylethyl)phenyl)ethylidene)bisphenol mit niediegem gehalt an metallionen und damit hergestellten photoresistszusammensetzungen

Info

Publication number
DE69607637D1
DE69607637D1 DE69607637T DE69607637T DE69607637D1 DE 69607637 D1 DE69607637 D1 DE 69607637D1 DE 69607637 T DE69607637 T DE 69607637T DE 69607637 T DE69607637 T DE 69607637T DE 69607637 D1 DE69607637 D1 DE 69607637D1
Authority
DE
Germany
Prior art keywords
photoresis
ethylidene
methylethyl
hydroxyphenyl
bisphenol
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69607637T
Other languages
English (en)
Other versions
DE69607637T2 (de
Inventor
Dalil Rahman
P Aubin
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Clariant Finance BVI Ltd
Original Assignee
Clariant Finance BVI Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Clariant Finance BVI Ltd filed Critical Clariant Finance BVI Ltd
Publication of DE69607637D1 publication Critical patent/DE69607637D1/de
Application granted granted Critical
Publication of DE69607637T2 publication Critical patent/DE69607637T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G8/00—Condensation polymers of aldehydes or ketones with phenols only
    • C08G8/04—Condensation polymers of aldehydes or ketones with phenols only of aldehydes
    • C08G8/08—Condensation polymers of aldehydes or ketones with phenols only of aldehydes of formaldehyde, e.g. of formaldehyde formed in situ
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C29/00—Preparation of compounds having hydroxy or O-metal groups bound to a carbon atom not belonging to a six-membered aromatic ring
    • C07C29/74—Separation; Purification; Use of additives, e.g. for stabilisation
    • C07C29/76—Separation; Purification; Use of additives, e.g. for stabilisation by physical treatment
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C39/00—Compounds having at least one hydroxy or O-metal group bound to a carbon atom of a six-membered aromatic ring
    • C07C39/12—Compounds having at least one hydroxy or O-metal group bound to a carbon atom of a six-membered aromatic ring polycyclic with no unsaturation outside the aromatic rings
    • C07C39/15—Compounds having at least one hydroxy or O-metal group bound to a carbon atom of a six-membered aromatic ring polycyclic with no unsaturation outside the aromatic rings with all hydroxy groups on non-condensed rings, e.g. phenylphenol
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/0226—Quinonediazides characterised by the non-macromolecular additives
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/22—Exposing sequentially with the same light pattern different positions of the same surface
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/942—Masking
    • Y10S438/948—Radiation resist

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Materials For Photolithography (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Phenolic Resins Or Amino Resins (AREA)
DE69607637T 1995-09-28 1996-09-25 4,4'-(1-(4-(1-(4-hydroxyphenyl)-1-methylethyl)phenyl)ethylidene)bisphenol mit niediegem gehalt an metallionen und damit hergestellten photoresistszusammensetzungen Expired - Lifetime DE69607637T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/535,701 US5656413A (en) 1995-09-28 1995-09-28 Low metal ion containing 4,4'-[1-[4-[1-(4-Hydroxyphenyl)-1-methylethyl]phenyl]ethylidene]bisphe nol and photoresist compositions therefrom
PCT/US1996/015432 WO1997011929A1 (en) 1995-09-28 1996-09-25 Low metal ion containing 4,4'-(1-(4-(1-(4-hydroxyphenyl)-1-methylethyl)phenyl)ethylidene)bisphenol and photoresist compositions therefrom

Publications (2)

Publication Number Publication Date
DE69607637D1 true DE69607637D1 (de) 2000-05-11
DE69607637T2 DE69607637T2 (de) 2000-11-16

Family

ID=24135403

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69607637T Expired - Lifetime DE69607637T2 (de) 1995-09-28 1996-09-25 4,4'-(1-(4-(1-(4-hydroxyphenyl)-1-methylethyl)phenyl)ethylidene)bisphenol mit niediegem gehalt an metallionen und damit hergestellten photoresistszusammensetzungen

Country Status (7)

Country Link
US (1) US5656413A (de)
EP (1) EP0854850B1 (de)
JP (1) JP3895776B2 (de)
KR (1) KR100421270B1 (de)
CN (3) CN1092176C (de)
DE (1) DE69607637T2 (de)
WO (1) WO1997011929A1 (de)

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US5750031A (en) * 1995-09-26 1998-05-12 Clariant Finance (Bvi) Limited Process for producing surfactant having a low metal ion level and developer produced therefrom
US5962183A (en) * 1995-11-27 1999-10-05 Clariant Finance (Bvi) Limited Metal ion reduction in photoresist compositions by chelating ion exchange resin
US5853954A (en) * 1996-12-18 1998-12-29 Clariant Finance (Bvi) Limited Fractionated novolak resin and photoresist composition therefrom
US5936071A (en) * 1998-02-02 1999-08-10 Clariant Finance (Bvi) Limited Process for making a photoactive compound and photoresist therefrom
US6610465B2 (en) * 2001-04-11 2003-08-26 Clariant Finance (Bvi) Limited Process for producing film forming resins for photoresist compositions
JP2005075767A (ja) * 2003-08-29 2005-03-24 Idemitsu Kosan Co Ltd フォトレジスト基材及びその精製方法、並びにフォトレジスト組成物
CN100503666C (zh) * 2003-12-22 2009-06-24 狮王株式会社 超支化聚合物及其制造方法、以及含有该超支化聚合物的抗蚀剂组合物
WO2005097725A1 (ja) * 2004-04-05 2005-10-20 Idemitsu Kosan Co., Ltd. カリックスレゾルシナレン化合物、フォトレジスト基材及びその組成物
US20060131240A1 (en) * 2004-12-16 2006-06-22 Romano Andrew R Process for treating solvents
US8647590B2 (en) * 2006-03-16 2014-02-11 Agilent Technologies, Inc. Optical detection cell with micro-fluidic chip
KR101392291B1 (ko) 2007-04-13 2014-05-07 주식회사 동진쎄미켐 포토레지스트 조성물 및 이를 이용한 박막트랜지스터기판의 제조방법
JP5541766B2 (ja) * 2009-05-19 2014-07-09 株式会社ダイセル フォトレジスト用高分子化合物の製造方法
JP5905207B2 (ja) 2011-04-21 2016-04-20 丸善石油化学株式会社 金属不純物量の少ない半導体リソグラフィー用共重合体の製造方法及び該共重合体を製造するための重合開始剤の精製方法
WO2017038968A1 (ja) * 2015-09-04 2017-03-09 三菱瓦斯化学株式会社 化合物の精製方法
JP6931198B2 (ja) * 2015-09-04 2021-09-01 三菱瓦斯化学株式会社 化合物の精製方法

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GB1509354A (en) * 1976-04-24 1978-05-04 Maruzen Oil Co Ltd Process for purifying halogenated alkenyl-phenol polymers
US4250031A (en) * 1977-03-01 1981-02-10 Unitika Ltd. Phenolic chelate resin and method of adsorption treatment
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Also Published As

Publication number Publication date
KR100421270B1 (ko) 2004-06-23
CN1312486A (zh) 2001-09-12
CN1175319C (zh) 2004-11-10
EP0854850A1 (de) 1998-07-29
KR19990063688A (ko) 1999-07-26
EP0854850B1 (de) 2000-04-05
JPH11512713A (ja) 1999-11-02
CN1176404C (zh) 2004-11-17
CN1198149A (zh) 1998-11-04
CN1092176C (zh) 2002-10-09
JP3895776B2 (ja) 2007-03-22
DE69607637T2 (de) 2000-11-16
WO1997011929A1 (en) 1997-04-03
US5656413A (en) 1997-08-12
CN1312487A (zh) 2001-09-12

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