DE69603002D1 - Laserdiode mit verengter Strahlungswinkel-Charakteristik - Google Patents
Laserdiode mit verengter Strahlungswinkel-CharakteristikInfo
- Publication number
- DE69603002D1 DE69603002D1 DE69603002T DE69603002T DE69603002D1 DE 69603002 D1 DE69603002 D1 DE 69603002D1 DE 69603002 T DE69603002 T DE 69603002T DE 69603002 T DE69603002 T DE 69603002T DE 69603002 D1 DE69603002 D1 DE 69603002D1
- Authority
- DE
- Germany
- Prior art keywords
- laser diode
- beam angle
- narrow beam
- angle characteristic
- characteristic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S2301/00—Functional characteristics
- H01S2301/18—Semiconductor lasers with special structural design for influencing the near- or far-field
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1003—Waveguide having a modified shape along the axis, e.g. branched, curved, tapered, voids
- H01S5/1014—Tapered waveguide, e.g. spotsize converter
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1053—Comprising an active region having a varying composition or cross-section in a specific direction
- H01S5/106—Comprising an active region having a varying composition or cross-section in a specific direction varying thickness along the optical axis
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/2004—Confining in the direction perpendicular to the layer structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/227—Buried mesa structure ; Striped active layer
- H01S5/2272—Buried mesa structure ; Striped active layer grown by a mask induced selective growth
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/227—Buried mesa structure ; Striped active layer
- H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching
- H01S5/2277—Buried mesa structure ; Striped active layer mesa created by etching double channel planar buried heterostructure [DCPBH] laser
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/3409—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers special GRINSCH structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/3421—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers layer structure of quantum wells to influence the near/far field
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7308506A JP3061169B2 (ja) | 1995-11-02 | 1995-11-02 | 半導体レーザ |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69603002D1 true DE69603002D1 (de) | 1999-07-29 |
DE69603002T2 DE69603002T2 (de) | 2000-02-24 |
Family
ID=17981849
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69603002T Expired - Fee Related DE69603002T2 (de) | 1995-11-02 | 1996-10-31 | Laserdiode mit verengter Strahlungswinkel-Charakteristik |
Country Status (4)
Country | Link |
---|---|
US (1) | US5693965A (de) |
EP (1) | EP0772268B1 (de) |
JP (1) | JP3061169B2 (de) |
DE (1) | DE69603002T2 (de) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2967737B2 (ja) * | 1996-12-05 | 1999-10-25 | 日本電気株式会社 | 光半導体装置とその製造方法 |
JP3463740B2 (ja) * | 1999-03-11 | 2003-11-05 | 日本電気株式会社 | 分布帰還型半導体レーザ |
US6853663B2 (en) * | 2000-06-02 | 2005-02-08 | Agilent Technologies, Inc. | Efficiency GaN-based light emitting devices |
JP3786054B2 (ja) * | 2001-09-07 | 2006-06-14 | 日本電気株式会社 | 半導体光素子および半導体レーザ |
KR100842277B1 (ko) * | 2006-12-07 | 2008-06-30 | 한국전자통신연구원 | 반사형 반도체 광증폭기 및 수퍼 루미네센스 다이오드 |
JP2012156378A (ja) | 2011-01-27 | 2012-08-16 | Mitsubishi Electric Corp | 半導体レーザ |
JP2014165327A (ja) * | 2013-02-25 | 2014-09-08 | Sony Corp | 半導体発光素子及びその製造方法、並びに、表示装置 |
US11921298B2 (en) * | 2020-09-22 | 2024-03-05 | Ii-Vi Delaware, Inc. | Spot-size converter |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3888388A (en) * | 1973-11-01 | 1975-06-10 | Ingersoll Rand Co | Apparatus and methods for controlling injection rams |
JPS5673485A (en) * | 1979-11-20 | 1981-06-18 | Fujitsu Ltd | Semiconductor luminous element |
US4520485A (en) * | 1981-03-17 | 1985-05-28 | Matsushita Electric Industrial Co., Ltd. | Semiconductor device |
JPS6196779A (ja) * | 1984-10-17 | 1986-05-15 | Nec Corp | 発光ダイオ−ド |
JPS62245690A (ja) * | 1986-04-18 | 1987-10-26 | Nippon Telegr & Teleph Corp <Ntt> | 半導体レ−ザ装置 |
JPH02199889A (ja) * | 1989-01-30 | 1990-08-08 | Toshiba Corp | 半導体レーザ装置及びその製造方法 |
US5392308A (en) * | 1993-01-07 | 1995-02-21 | Sdl, Inc. | Semiconductor laser with integral spatial mode filter |
JP3548986B2 (ja) * | 1994-02-15 | 2004-08-04 | 富士通株式会社 | 光半導体装置及びその製造方法 |
-
1995
- 1995-11-02 JP JP7308506A patent/JP3061169B2/ja not_active Expired - Fee Related
-
1996
- 1996-10-31 DE DE69603002T patent/DE69603002T2/de not_active Expired - Fee Related
- 1996-10-31 EP EP96117544A patent/EP0772268B1/de not_active Expired - Lifetime
- 1996-11-04 US US08/743,086 patent/US5693965A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JP3061169B2 (ja) | 2000-07-10 |
US5693965A (en) | 1997-12-02 |
EP0772268B1 (de) | 1999-06-23 |
EP0772268A1 (de) | 1997-05-07 |
DE69603002T2 (de) | 2000-02-24 |
JPH09129971A (ja) | 1997-05-16 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |