DE69600711D1 - EEPROM-Speicher, der mit Fowler-Nordheim Effekt programmiert und gelöscht wird - Google Patents

EEPROM-Speicher, der mit Fowler-Nordheim Effekt programmiert und gelöscht wird

Info

Publication number
DE69600711D1
DE69600711D1 DE69600711T DE69600711T DE69600711D1 DE 69600711 D1 DE69600711 D1 DE 69600711D1 DE 69600711 T DE69600711 T DE 69600711T DE 69600711 T DE69600711 T DE 69600711T DE 69600711 D1 DE69600711 D1 DE 69600711D1
Authority
DE
Germany
Prior art keywords
fowler
deleted
programmed
eeprom memory
nordheim effect
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69600711T
Other languages
English (en)
Other versions
DE69600711T2 (de
Inventor
Marc Guedj
Allessandro Brigati
Maxence Aulas
Nicole Demange
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SA
Original Assignee
SGS Thomson Microelectronics SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SGS Thomson Microelectronics SA filed Critical SGS Thomson Microelectronics SA
Publication of DE69600711D1 publication Critical patent/DE69600711D1/de
Application granted granted Critical
Publication of DE69600711T2 publication Critical patent/DE69600711T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0433—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and one or more separate select transistors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Read Only Memory (AREA)
  • Non-Volatile Memory (AREA)
DE69600711T 1995-06-21 1996-06-17 EEPROM-Speicher, der mit Fowler-Nordheim Effekt programmiert und gelöscht wird Expired - Fee Related DE69600711T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9507622A FR2735896B1 (fr) 1995-06-21 1995-06-21 Memoire eeprom programmable et effacable par effet de fowler-nordheim

Publications (2)

Publication Number Publication Date
DE69600711D1 true DE69600711D1 (de) 1998-11-05
DE69600711T2 DE69600711T2 (de) 1999-03-04

Family

ID=9480373

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69600711T Expired - Fee Related DE69600711T2 (de) 1995-06-21 1996-06-17 EEPROM-Speicher, der mit Fowler-Nordheim Effekt programmiert und gelöscht wird

Country Status (5)

Country Link
US (1) US6011717A (de)
EP (1) EP0750313B1 (de)
JP (1) JPH097379A (de)
DE (1) DE69600711T2 (de)
FR (1) FR2735896B1 (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2321735A (en) * 1997-01-30 1998-08-05 Motorola Inc Circuit and method for sharing a latch between a bit line and an erase line in a non-volatile memory
DE19730116C2 (de) 1997-07-14 2001-12-06 Infineon Technologies Ag Halbleiterspeicher mit nicht-flüchtigen Zwei-Transistor-Speicherzellen
FR2776820B1 (fr) * 1998-03-24 2000-05-26 Sgs Thomson Microelectronics Memoire a grille flottante electriquement effacable organisee en mots
DE69832609D1 (de) * 1998-09-30 2006-01-05 St Microelectronics Srl Emulierte EEPROM Speicheranordnung und entsprechendes Verfahren
US6215701B1 (en) * 1998-12-22 2001-04-10 Oki Semiconductor Nonvolatile memory cell structure for integration with semiconductor logic devices and method of using same
US6650563B2 (en) * 2002-04-23 2003-11-18 Broadcom Corporation Compact and highly efficient DRAM cell
EP1814121A1 (de) * 2006-01-31 2007-08-01 STMicroelectronics S.r.l. Nichtflüchtige EEPROM Speicheranordnung
US8320191B2 (en) 2007-08-30 2012-11-27 Infineon Technologies Ag Memory cell arrangement, method for controlling a memory cell, memory array and electronic device
EP2302635B1 (de) * 2009-09-18 2016-01-13 STMicroelectronics Srl Verfahren zum Vormagnetisieren einer nichtflüchtigen EEPROM-Speicheranordnung und entsprechende nichtflüchtige EEPROM-Speicheranordnung
WO2012168954A1 (en) * 2011-06-10 2012-12-13 Micron Technology Inc. Apparatus and methods to perform read-while write (rww) operations

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE68916281T2 (de) * 1988-03-09 1995-01-26 Philips Nv EEPROM mit durch Daten gesteuerten Löschungs- und Schreibmodus.
US5077691A (en) * 1989-10-23 1991-12-31 Advanced Micro Devices, Inc. Flash EEPROM array with negative gate voltage erase operation
JP2835215B2 (ja) * 1991-07-25 1998-12-14 株式会社東芝 不揮発性半導体記憶装置
DE69305986T2 (de) * 1993-07-29 1997-03-06 Sgs Thomson Microelectronics Schaltungsstruktur für Speichermatrix und entsprechende Herstellungsverfahren
US5477499A (en) * 1993-10-13 1995-12-19 Advanced Micro Devices, Inc. Memory architecture for a three volt flash EEPROM
KR100256322B1 (ko) * 1994-03-03 2000-05-15 제니 필더 파울러-노드하임 프로그래밍 및 이레이즈를 이용한 저전압 단일트랜지스터 플래쉬 이이피롬셀
GB9417266D0 (en) * 1994-08-26 1994-10-19 Inmos Ltd Testing a non-volatile memory
GB9423032D0 (en) * 1994-11-15 1995-01-04 Sgs Thomson Microelectronics Bit line sensing in a memory array

Also Published As

Publication number Publication date
EP0750313B1 (de) 1998-09-30
EP0750313A1 (de) 1996-12-27
US6011717A (en) 2000-01-04
DE69600711T2 (de) 1999-03-04
FR2735896B1 (fr) 1997-08-22
FR2735896A1 (fr) 1996-12-27
JPH097379A (ja) 1997-01-10

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee