DE69600348D1 - Spannungs- und/oder Stromreferenzgenerator in integriertem Schaltkreis - Google Patents
Spannungs- und/oder Stromreferenzgenerator in integriertem SchaltkreisInfo
- Publication number
- DE69600348D1 DE69600348D1 DE69600348T DE69600348T DE69600348D1 DE 69600348 D1 DE69600348 D1 DE 69600348D1 DE 69600348 T DE69600348 T DE 69600348T DE 69600348 T DE69600348 T DE 69600348T DE 69600348 D1 DE69600348 D1 DE 69600348D1
- Authority
- DE
- Germany
- Prior art keywords
- voltage
- integrated circuit
- current reference
- reference generator
- generator
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
- G05F3/02—Regulating voltage or current
- G05F3/08—Regulating voltage or current wherein the variable is dc
- G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
- G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
- G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
- G05F3/24—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
- G05F3/242—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage
- G05F3/245—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage producing a voltage or current as a predetermined function of the temperature
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
- G05F3/02—Regulating voltage or current
- G05F3/08—Regulating voltage or current wherein the variable is dc
- G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
- G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
- G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
- G05F3/24—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
- G05F3/242—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage
- G05F3/247—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage producing a voltage or current as a predetermined function of the supply voltage
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S323/00—Electricity: power supply or regulation systems
- Y10S323/907—Temperature compensation of semiconductor
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Radar, Positioning & Navigation (AREA)
- Automation & Control Theory (AREA)
- Control Of Electrical Variables (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR9509023A FR2737319B1 (fr) | 1995-07-25 | 1995-07-25 | Generateur de reference de tension et/ou de courant en circuit integre |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69600348D1 true DE69600348D1 (de) | 1998-07-16 |
DE69600348T2 DE69600348T2 (de) | 1998-10-08 |
Family
ID=9481355
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69600348T Expired - Fee Related DE69600348T2 (de) | 1995-07-25 | 1996-07-24 | Spannungs- und/oder Stromreferenzgenerator in integriertem Schaltkreis |
Country Status (4)
Country | Link |
---|---|
US (1) | US5841270A (de) |
EP (1) | EP0756223B1 (de) |
DE (1) | DE69600348T2 (de) |
FR (1) | FR2737319B1 (de) |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6292050B1 (en) | 1997-01-29 | 2001-09-18 | Cardiac Pacemakers, Inc. | Current and temperature compensated voltage reference having improved power supply rejection |
DE19818464A1 (de) * | 1998-04-24 | 1999-10-28 | Siemens Ag | Referenzspannung-Erzeugungsschaltung |
US6381491B1 (en) | 2000-08-18 | 2002-04-30 | Cardiac Pacemakers, Inc. | Digitally trimmable resistor for bandgap voltage reference |
KR100344222B1 (ko) * | 2000-09-30 | 2002-07-20 | 삼성전자 주식회사 | 능동저항소자를 사용한 기준전압 발생회로 |
JP3868756B2 (ja) * | 2001-04-10 | 2007-01-17 | シャープ株式会社 | 半導体装置の内部電源電圧発生回路 |
KR100554979B1 (ko) * | 2003-10-31 | 2006-03-03 | 주식회사 하이닉스반도체 | 기준전압 발생회로 |
US7180360B2 (en) * | 2004-11-12 | 2007-02-20 | Lsi Logic Corporation | Method and apparatus for summing DC voltages |
US7397226B1 (en) * | 2005-01-13 | 2008-07-08 | National Semiconductor Corporation | Low noise, low power, fast startup, and low drop-out voltage regulator |
WO2008050375A1 (fr) * | 2006-09-29 | 2008-05-02 | Fujitsu Limited | Circuit de polarisation |
US7768248B1 (en) | 2006-10-31 | 2010-08-03 | Impinj, Inc. | Devices, systems and methods for generating reference current from voltage differential having low temperature coefficient |
US20110133710A1 (en) * | 2009-12-08 | 2011-06-09 | Deepak Pancholi | Partial Feedback Mechanism in Voltage Regulators to Reduce Output Noise Coupling and DC Voltage Shift at Output |
US8471538B2 (en) * | 2010-01-25 | 2013-06-25 | Sandisk Technologies Inc. | Controlled load regulation and improved response time of LDO with adaptive current distribution mechanism |
US8283198B2 (en) | 2010-05-10 | 2012-10-09 | Micron Technology, Inc. | Resistive memory and methods of processing resistive memory |
US9122292B2 (en) | 2012-12-07 | 2015-09-01 | Sandisk Technologies Inc. | LDO/HDO architecture using supplementary current source to improve effective system bandwidth |
CN103631311A (zh) * | 2013-11-28 | 2014-03-12 | 苏州贝克微电子有限公司 | 一种稳压器 |
KR20160072703A (ko) * | 2014-12-15 | 2016-06-23 | 에스케이하이닉스 주식회사 | 기준전압 생성회로 |
TWI569578B (zh) * | 2015-08-10 | 2017-02-01 | 威盛電子股份有限公司 | 控制電路、連接線及其控制方法 |
TWI720305B (zh) * | 2018-04-10 | 2021-03-01 | 智原科技股份有限公司 | 電壓產生電路 |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4723108A (en) * | 1986-07-16 | 1988-02-02 | Cypress Semiconductor Corporation | Reference circuit |
GB2210745A (en) * | 1987-10-08 | 1989-06-14 | Ibm | Voltage-controlled current-circuit |
US4994688A (en) * | 1988-05-25 | 1991-02-19 | Hitachi Ltd. | Semiconductor device having a reference voltage generating circuit |
US4918334A (en) * | 1988-08-15 | 1990-04-17 | International Business Machines Corporation | Bias voltage generator for static CMOS circuits |
EP0397408A1 (de) * | 1989-05-09 | 1990-11-14 | Advanced Micro Devices, Inc. | Referenzspannungsgenerator |
US4970415A (en) * | 1989-07-18 | 1990-11-13 | Gazelle Microcircuits, Inc. | Circuit for generating reference voltages and reference currents |
US4978905A (en) * | 1989-10-31 | 1990-12-18 | Cypress Semiconductor Corp. | Noise reduction output buffer |
US5029295A (en) * | 1990-07-02 | 1991-07-02 | Motorola, Inc. | Bandgap voltage reference using a power supply independent current source |
JPH04111008A (ja) * | 1990-08-30 | 1992-04-13 | Oki Electric Ind Co Ltd | 定電流源回路 |
US5124632A (en) * | 1991-07-01 | 1992-06-23 | Motorola, Inc. | Low-voltage precision current generator |
US5302888A (en) * | 1992-04-01 | 1994-04-12 | Texas Instruments Incorporated | CMOS integrated mid-supply voltage generator |
FR2703856B1 (fr) * | 1993-04-09 | 1995-06-30 | Sgs Thomson Microelectronics | Architecture d'amplificateur et application a un generateur de tension de bande interdite . |
DE4312117C1 (de) * | 1993-04-14 | 1994-04-14 | Texas Instruments Deutschland | Bandabstands-Referenzspannungsquelle |
US5451860A (en) * | 1993-05-21 | 1995-09-19 | Unitrode Corporation | Low current bandgap reference voltage circuit |
JPH07106869A (ja) * | 1993-09-30 | 1995-04-21 | Nec Corp | 定電流回路 |
KR960002457B1 (ko) * | 1994-02-07 | 1996-02-17 | 금성일렉트론주식회사 | 정전압회로 |
KR0143344B1 (ko) * | 1994-11-02 | 1998-08-17 | 김주용 | 온도의 변화에 대하여 보상 기능이 있는 기준전압 발생기 |
US5686824A (en) * | 1996-09-27 | 1997-11-11 | National Semiconductor Corporation | Voltage regulator with virtually zero power dissipation |
-
1995
- 1995-07-25 FR FR9509023A patent/FR2737319B1/fr not_active Expired - Fee Related
-
1996
- 1996-07-23 US US08/685,434 patent/US5841270A/en not_active Expired - Lifetime
- 1996-07-24 EP EP96401646A patent/EP0756223B1/de not_active Expired - Lifetime
- 1996-07-24 DE DE69600348T patent/DE69600348T2/de not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
EP0756223B1 (de) | 1998-06-10 |
DE69600348T2 (de) | 1998-10-08 |
EP0756223A1 (de) | 1997-01-29 |
FR2737319A1 (fr) | 1997-01-31 |
US5841270A (en) | 1998-11-24 |
FR2737319B1 (fr) | 1997-08-29 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |