DE69328623D1 - Stabile Referenzspannungsgeneratorschaltung - Google Patents

Stabile Referenzspannungsgeneratorschaltung

Info

Publication number
DE69328623D1
DE69328623D1 DE69328623T DE69328623T DE69328623D1 DE 69328623 D1 DE69328623 D1 DE 69328623D1 DE 69328623 T DE69328623 T DE 69328623T DE 69328623 T DE69328623 T DE 69328623T DE 69328623 D1 DE69328623 D1 DE 69328623D1
Authority
DE
Germany
Prior art keywords
reference voltage
voltage generator
generator circuit
stable reference
stable
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69328623T
Other languages
English (en)
Other versions
DE69328623T2 (de
Inventor
Silvia Padoan
Carla Golla
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SRL
Original Assignee
STMicroelectronics SRL
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SRL filed Critical STMicroelectronics SRL
Publication of DE69328623D1 publication Critical patent/DE69328623D1/de
Application granted granted Critical
Publication of DE69328623T2 publication Critical patent/DE69328623T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is DC
    • G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/24—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
    • G05F3/242—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage
    • G05F3/245—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage producing a voltage or current as a predetermined function of the temperature

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Control Of Electrical Variables (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Logic Circuits (AREA)
  • Read Only Memory (AREA)
DE69328623T 1993-11-30 1993-11-30 Stabile Referenzspannungsgeneratorschaltung Expired - Fee Related DE69328623T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP93830482A EP0655669B1 (de) 1993-11-30 1993-11-30 Stabile Referenzspannungsgeneratorschaltung

Publications (2)

Publication Number Publication Date
DE69328623D1 true DE69328623D1 (de) 2000-06-15
DE69328623T2 DE69328623T2 (de) 2001-02-08

Family

ID=8215262

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69328623T Expired - Fee Related DE69328623T2 (de) 1993-11-30 1993-11-30 Stabile Referenzspannungsgeneratorschaltung

Country Status (4)

Country Link
US (1) US6392469B1 (de)
EP (1) EP0655669B1 (de)
JP (1) JP2656911B2 (de)
DE (1) DE69328623T2 (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SG83670A1 (en) * 1997-09-02 2001-10-16 Oki Techno Ct Singapore A bias stabilization circuit
IT1303209B1 (it) * 1998-12-03 2000-10-30 Cselt Centro Studi Lab Telecom Dispositivo per la compensazione delle variazioni dei parametridi processo ed operativi in circuiti integrati in tecnologia cmos
JP2003347852A (ja) * 2002-05-24 2003-12-05 Toshiba Corp バイアス回路及び半導体装置
JP4792034B2 (ja) * 2005-08-08 2011-10-12 スパンション エルエルシー 半導体装置およびその制御方法
CN115328262A (zh) * 2022-09-01 2022-11-11 中国科学技术大学 具有工艺补偿的低压低功耗cmos基准电压源及调试方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3805095A (en) * 1972-12-29 1974-04-16 Ibm Fet threshold compensating bias circuit
JPS50142128A (de) * 1974-05-07 1975-11-15
JPS52106054U (de) * 1976-02-09 1977-08-12
US4307307A (en) * 1979-08-09 1981-12-22 Parekh Rajesh H Bias control for transistor circuits incorporating substrate bias generators
JPS60252923A (ja) * 1984-09-28 1985-12-13 Hitachi Ltd 半導体集積回路装置
JPS60243717A (ja) * 1984-10-24 1985-12-03 Hitachi Ltd 電圧レギユレ−タ
US4843265A (en) * 1986-02-10 1989-06-27 Dallas Semiconductor Corporation Temperature compensated monolithic delay circuit
US4754168A (en) * 1987-01-28 1988-06-28 National Semiconductor Corporation Charge pump circuit for substrate-bias generator
KR890005159B1 (ko) * 1987-04-30 1989-12-14 삼성전자 주식회사 백 바이어스 전압 발생기
IT1224644B (it) * 1987-12-22 1990-10-18 Sgs Thomson Microelectronics Circuito per il mantenimento in conduzione di un transistore mos in mancanza di tensione di alimentazione elettrica.
JPH0673092B2 (ja) * 1988-04-12 1994-09-14 日本電気株式会社 定電圧発生回路

Also Published As

Publication number Publication date
JPH07235642A (ja) 1995-09-05
EP0655669A1 (de) 1995-05-31
JP2656911B2 (ja) 1997-09-24
EP0655669B1 (de) 2000-05-10
DE69328623T2 (de) 2001-02-08
US6392469B1 (en) 2002-05-21

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee