DE69521719T2 - Halbleiter-laserelement - Google Patents
Halbleiter-laserelementInfo
- Publication number
- DE69521719T2 DE69521719T2 DE69521719T DE69521719T DE69521719T2 DE 69521719 T2 DE69521719 T2 DE 69521719T2 DE 69521719 T DE69521719 T DE 69521719T DE 69521719 T DE69521719 T DE 69521719T DE 69521719 T2 DE69521719 T2 DE 69521719T2
- Authority
- DE
- Germany
- Prior art keywords
- layers
- type
- layer
- carrier blocking
- cladding
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 title claims description 66
- 230000000903 blocking effect Effects 0.000 claims description 104
- 238000005253 cladding Methods 0.000 claims description 93
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 38
- 229910052799 carbon Inorganic materials 0.000 claims description 38
- 239000002019 doping agent Substances 0.000 claims description 28
- 239000011777 magnesium Substances 0.000 claims description 24
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 23
- 229910052749 magnesium Inorganic materials 0.000 claims description 23
- 230000010355 oscillation Effects 0.000 claims description 15
- 150000001875 compounds Chemical class 0.000 claims description 13
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 claims description 11
- 239000011701 zinc Substances 0.000 description 30
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 26
- 229910052725 zinc Inorganic materials 0.000 description 26
- 239000000969 carrier Substances 0.000 description 24
- 238000010586 diagram Methods 0.000 description 19
- 230000003287 optical effect Effects 0.000 description 17
- 230000001965 increasing effect Effects 0.000 description 16
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 14
- 239000011669 selenium Substances 0.000 description 12
- 238000009792 diffusion process Methods 0.000 description 10
- 229910052711 selenium Inorganic materials 0.000 description 7
- 239000000758 substrate Substances 0.000 description 7
- 238000005036 potential barrier Methods 0.000 description 6
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 5
- 238000010521 absorption reaction Methods 0.000 description 5
- 238000009826 distribution Methods 0.000 description 5
- 230000000644 propagated effect Effects 0.000 description 5
- 238000000576 coating method Methods 0.000 description 4
- 230000005574 cross-species transmission Effects 0.000 description 4
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000000295 emission spectrum Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 230000002708 enhancing effect Effects 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 125000003748 selenium group Chemical group *[Se]* 0.000 description 2
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 2
- -1 AlGaAs Chemical class 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 230000004936 stimulating effect Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/2004—Confining in the direction perpendicular to the layer structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
- H01S5/3086—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure doping of the active layer
- H01S5/309—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure doping of the active layer doping of barrier layers that confine charge carriers in the laser structure, e.g. the barriers in a quantum well structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/3211—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities
Landscapes
- Physics & Mathematics (AREA)
- Geometry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP32903194 | 1994-12-28 | ||
| JP18607295 | 1995-07-21 | ||
| JP19221195A JP3658048B2 (ja) | 1995-07-27 | 1995-07-27 | 半導体レーザ素子 |
| PCT/JP1995/002677 WO1996020522A1 (fr) | 1994-12-28 | 1995-12-25 | Element de laser a semi-conducteur |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE69521719D1 DE69521719D1 (de) | 2001-08-16 |
| DE69521719T2 true DE69521719T2 (de) | 2002-04-25 |
Family
ID=27325677
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE69521719T Expired - Lifetime DE69521719T2 (de) | 1994-12-28 | 1995-12-25 | Halbleiter-laserelement |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US5949807A (ko) |
| EP (1) | EP0805533B1 (ko) |
| KR (1) | KR100271674B1 (ko) |
| CA (1) | CA2208999C (ko) |
| DE (1) | DE69521719T2 (ko) |
| WO (1) | WO1996020522A1 (ko) |
Families Citing this family (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3481458B2 (ja) | 1998-05-14 | 2003-12-22 | アンリツ株式会社 | 半導体レーザ |
| US6240114B1 (en) * | 1998-08-07 | 2001-05-29 | Agere Systems Optoelectronics Guardian Corp. | Multi-quantum well lasers with selectively doped barriers |
| US6301281B1 (en) * | 1998-08-31 | 2001-10-09 | Agilent Technologies, Inc. | Semiconductor laser having co-doped distributed bragg reflectors |
| JP3676965B2 (ja) * | 1999-08-31 | 2005-07-27 | シャープ株式会社 | 半導体レーザ素子及びその製造方法 |
| JP2002111135A (ja) * | 2000-10-02 | 2002-04-12 | Furukawa Electric Co Ltd:The | 半導体レーザ素子、それを用いた光ファイバ増幅器用励起光源 |
| US7110169B1 (en) | 2000-12-14 | 2006-09-19 | Finisar Corporation | Integrated optical device including a vertical lasing semiconductor optical amplifier |
| US7065300B1 (en) | 2000-12-14 | 2006-06-20 | Finsiar Corporation | Optical transmitter including a linear semiconductor optical amplifier |
| US6853658B1 (en) | 2000-12-14 | 2005-02-08 | Finisar Corporation | Optical logical circuits based on lasing semiconductor optical amplifiers |
| US6909536B1 (en) | 2001-03-09 | 2005-06-21 | Finisar Corporation | Optical receiver including a linear semiconductor optical amplifier |
| JP2003332694A (ja) * | 2002-05-17 | 2003-11-21 | Mitsubishi Electric Corp | 半導体レーザ |
| US6927412B2 (en) * | 2002-11-21 | 2005-08-09 | Ricoh Company, Ltd. | Semiconductor light emitter |
| CN100449891C (zh) * | 2003-12-15 | 2009-01-07 | 古河电气工业株式会社 | 制造半导体器件的方法 |
| EP2346124B1 (en) * | 2008-10-31 | 2018-09-19 | Optoenergy, Inc. | Semiconductor laser element |
| JP5590829B2 (ja) * | 2009-07-03 | 2014-09-17 | キヤノン株式会社 | 面発光レーザ、面発光レーザアレイ及び画像形成装置 |
| WO2018003551A1 (ja) * | 2016-06-30 | 2018-01-04 | パナソニックＩｐマネジメント株式会社 | 半導体レーザ装置、半導体レーザモジュール及び溶接用レーザ光源システム |
| JP7182344B2 (ja) | 2018-03-13 | 2022-12-02 | 株式会社フジクラ | 半導体光素子、半導体光素子形成用構造体及びこれを用いた半導体光素子の製造方法 |
| CN112398003B (zh) * | 2019-08-19 | 2023-01-06 | 朗美通日本株式会社 | 调制掺杂半导体激光器及其制造方法 |
Family Cites Families (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55123191A (en) * | 1979-03-16 | 1980-09-22 | Fujitsu Ltd | Semiconductor light emitting device |
| JPS6232678A (ja) * | 1985-08-05 | 1987-02-12 | Mitsubishi Electric Corp | 半導体レ−ザ装置 |
| JPS6356977A (ja) * | 1986-08-27 | 1988-03-11 | Fujitsu Ltd | 半導体レ−ザ |
| JPH01175284A (ja) * | 1987-12-29 | 1989-07-11 | Sharp Corp | 半導体レーザ素子 |
| JP2728672B2 (ja) * | 1988-02-22 | 1998-03-18 | 株式会社東芝 | 半導体レーザ装置、ダブルヘテロウエハおよびその製造方法 |
| FR2649549B1 (fr) * | 1989-07-04 | 1991-09-20 | Thomson Csf | Laser semiconducteur a puits quantique |
| JPH03276785A (ja) * | 1990-03-27 | 1991-12-06 | Sony Corp | 半導体レーザ |
| JPH04180684A (ja) * | 1990-11-15 | 1992-06-26 | Nec Corp | 半導体レーザ |
| JP2969939B2 (ja) * | 1990-11-30 | 1999-11-02 | 松下電器産業株式会社 | 半導体レーザ装置又は光導波路およびその製造方法 |
| JPH04213886A (ja) * | 1990-12-11 | 1992-08-04 | Nec Corp | 可視光半導体レーザ |
| JPH0563293A (ja) * | 1991-08-30 | 1993-03-12 | Sharp Corp | ＡｌＧａＩｎＰ系半導体レーザ素子およびその製造方法 |
| JP2912482B2 (ja) * | 1991-08-30 | 1999-06-28 | シャープ株式会社 | 半導体レーザ |
| DE69324733T2 (de) * | 1992-02-05 | 1999-10-07 | Mitsui Chemicals, Inc. | Halbleiterlaserelement und damit hergestellter laser |
| JP3133187B2 (ja) * | 1992-03-04 | 2001-02-05 | 富士通株式会社 | 半導体装置およびその製造方法 |
| US5381756A (en) * | 1992-03-04 | 1995-01-17 | Fujitsu Limited | Magnesium doping in III-V compound semiconductor |
| JP3322928B2 (ja) * | 1993-02-05 | 2002-09-09 | シャープ株式会社 | 半導体レーザ装置 |
| US5811839A (en) * | 1994-09-01 | 1998-09-22 | Mitsubishi Chemical Corporation | Semiconductor light-emitting devices |
| JPH0888434A (ja) * | 1994-09-19 | 1996-04-02 | Mitsubishi Electric Corp | 半導体レーザ，及びその製造方法 |
-
1995
- 1995-12-25 DE DE69521719T patent/DE69521719T2/de not_active Expired - Lifetime
- 1995-12-25 KR KR1019970704469A patent/KR100271674B1/ko not_active IP Right Cessation
- 1995-12-25 EP EP95941883A patent/EP0805533B1/en not_active Expired - Lifetime
- 1995-12-25 WO PCT/JP1995/002677 patent/WO1996020522A1/ja active IP Right Grant
- 1995-12-25 CA CA002208999A patent/CA2208999C/en not_active Expired - Fee Related
- 1995-12-25 US US08/860,489 patent/US5949807A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| CA2208999A1 (en) | 1996-07-04 |
| KR987001150A (ko) | 1998-04-30 |
| WO1996020522A1 (fr) | 1996-07-04 |
| CA2208999C (en) | 2001-02-13 |
| EP0805533A4 (en) | 1998-04-08 |
| US5949807A (en) | 1999-09-07 |
| DE69521719D1 (de) | 2001-08-16 |
| KR100271674B1 (ko) | 2000-12-01 |
| EP0805533A1 (en) | 1997-11-05 |
| EP0805533B1 (en) | 2001-07-11 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8364 | No opposition during term of opposition |