DE69517020T2 - Niedrigtemperaturoxidation auf flächen unter verwendung von ozonzerlegungsprodukten hergestellt durch mikrowellenentladung - Google Patents

Niedrigtemperaturoxidation auf flächen unter verwendung von ozonzerlegungsprodukten hergestellt durch mikrowellenentladung

Info

Publication number
DE69517020T2
DE69517020T2 DE69517020T DE69517020T DE69517020T2 DE 69517020 T2 DE69517020 T2 DE 69517020T2 DE 69517020 T DE69517020 T DE 69517020T DE 69517020 T DE69517020 T DE 69517020T DE 69517020 T2 DE69517020 T2 DE 69517020T2
Authority
DE
Germany
Prior art keywords
microwave discharge
low temperature
products produced
decomposition products
temperature oxidation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69517020T
Other languages
English (en)
Other versions
DE69517020D1 (de
Inventor
William C Neely
Raymond F Askew
William F Welch
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Auburn University
Original Assignee
Auburn University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Auburn University filed Critical Auburn University
Application granted granted Critical
Publication of DE69517020D1 publication Critical patent/DE69517020D1/de
Publication of DE69517020T2 publication Critical patent/DE69517020T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/009—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone characterised by the material treated
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B13/00—Oxygen; Ozone; Oxides or hydroxides in general
    • C01B13/02—Preparation of oxygen
    • C01B13/0203—Preparation of oxygen from inorganic compounds
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
    • C04B41/50—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials
    • C04B41/5025—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials with ceramic materials
    • C04B41/5035—Silica
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/53—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone involving the removal of at least part of the materials of the treated article, e.g. etching, drying of hardened concrete
    • C04B41/5338—Etching
    • C04B41/5346—Dry etching
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
    • C04B41/81—Coating or impregnation
    • C04B41/85—Coating or impregnation with inorganic materials
    • C04B41/87—Ceramics
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
    • C04B41/91—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics involving the removal of part of the materials of the treated articles, e.g. etching
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
    • C23C8/06—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases
    • C23C8/08—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases only one element being applied
    • C23C8/10—Oxidising
    • C23C8/12—Oxidising using elemental oxygen or ozone
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
    • H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
    • H01L21/02236—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
    • H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
    • H01L21/02236—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor
    • H01L21/02238—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor silicon in uncombined form, i.e. pure silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/02252—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by plasma treatment, e.g. plasma oxidation of the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
    • H01L21/3165—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation
    • H01L21/31654—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
    • H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
    • H01L21/461—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/469—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After-treatment of these layers
    • H01L21/471—Inorganic layers
    • H01L21/473—Inorganic layers composed of oxides or glassy oxides or oxide based glass
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2111/00—Mortars, concrete or artificial stone or mixtures to prepare them, characterised by specific function, property or use
    • C04B2111/00474—Uses not provided for elsewhere in C04B2111/00
    • C04B2111/00844—Uses not provided for elsewhere in C04B2111/00 for electronic applications
DE69517020T 1994-03-16 1995-03-16 Niedrigtemperaturoxidation auf flächen unter verwendung von ozonzerlegungsprodukten hergestellt durch mikrowellenentladung Expired - Fee Related DE69517020T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/214,795 US5443863A (en) 1994-03-16 1994-03-16 Low-temperature oxidation at surfaces using ozone decomposition products formed by microwave discharge
PCT/US1995/003186 WO1995024975A1 (en) 1994-03-16 1995-03-16 Low-temperature oxidation at surfaces using ozone decomposition products formed by microwave discharge

Publications (2)

Publication Number Publication Date
DE69517020D1 DE69517020D1 (de) 2000-06-21
DE69517020T2 true DE69517020T2 (de) 2000-09-14

Family

ID=22800438

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69517020T Expired - Fee Related DE69517020T2 (de) 1994-03-16 1995-03-16 Niedrigtemperaturoxidation auf flächen unter verwendung von ozonzerlegungsprodukten hergestellt durch mikrowellenentladung

Country Status (8)

Country Link
US (1) US5443863A (de)
EP (1) EP0750530B1 (de)
JP (1) JPH10500386A (de)
AT (1) ATE193066T1 (de)
AU (1) AU2120095A (de)
DE (1) DE69517020T2 (de)
TW (1) TW283808B (de)
WO (1) WO1995024975A1 (de)

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US5913149A (en) * 1992-12-31 1999-06-15 Micron Technology, Inc. Method for fabricating stacked layer silicon nitride for low leakage and high capacitance
US5589422A (en) * 1993-01-15 1996-12-31 Intel Corporation Controlled, gas phase process for removal of trace metal contamination and for removal of a semiconductor layer
SE9600524D0 (sv) * 1996-02-14 1996-02-14 Abb Research Ltd A method and a device for oxidation of a semiconductor layer of SiC
US6287988B1 (en) * 1997-03-18 2001-09-11 Kabushiki Kaisha Toshiba Semiconductor device manufacturing method, semiconductor device manufacturing apparatus and semiconductor device
DE19716374A1 (de) * 1997-04-18 1998-10-22 Wacker Chemie Gmbh Brechen von Reinstsilicium auf Eis
US7030038B1 (en) 1997-07-31 2006-04-18 Texas Instruments Incorporated Low temperature method for forming a thin, uniform oxide
DE19847098A1 (de) * 1998-10-13 2000-04-20 Wacker Chemie Gmbh Verfahren und Vorrichtung zur Bearbeitung von Halbleitermaterial
US6358867B1 (en) * 2000-06-16 2002-03-19 Infineon Technologies Ag Orientation independent oxidation of silicon
US6667197B1 (en) 2002-12-06 2003-12-23 International Business Machines Corporation Method for differential oxidation rate reduction for n-type and p-type materials
US6764883B1 (en) * 2003-01-07 2004-07-20 International Business Machines Corp. Amorphous and polycrystalline silicon nanolaminate
US7273638B2 (en) * 2003-01-07 2007-09-25 International Business Machines Corp. High density plasma oxidation
US7572741B2 (en) 2005-09-16 2009-08-11 Cree, Inc. Methods of fabricating oxide layers on silicon carbide layers utilizing atomic oxygen
US7974119B2 (en) 2008-07-10 2011-07-05 Seagate Technology Llc Transmission gate-based spin-transfer torque memory unit
US9030867B2 (en) 2008-10-20 2015-05-12 Seagate Technology Llc Bipolar CMOS select device for resistive sense memory
US7936580B2 (en) 2008-10-20 2011-05-03 Seagate Technology Llc MRAM diode array and access method
US7936583B2 (en) 2008-10-30 2011-05-03 Seagate Technology Llc Variable resistive memory punchthrough access method
US7825478B2 (en) 2008-11-07 2010-11-02 Seagate Technology Llc Polarity dependent switch for resistive sense memory
US8178864B2 (en) 2008-11-18 2012-05-15 Seagate Technology Llc Asymmetric barrier diode
US8203869B2 (en) 2008-12-02 2012-06-19 Seagate Technology Llc Bit line charge accumulation sensing for resistive changing memory
US8159856B2 (en) 2009-07-07 2012-04-17 Seagate Technology Llc Bipolar select device for resistive sense memory
US8158964B2 (en) 2009-07-13 2012-04-17 Seagate Technology Llc Schottky diode switch and memory units containing the same
US8183126B2 (en) 2009-07-13 2012-05-22 Seagate Technology Llc Patterning embedded control lines for vertically stacked semiconductor elements
US8617952B2 (en) 2010-09-28 2013-12-31 Seagate Technology Llc Vertical transistor with hardening implatation
US8648426B2 (en) 2010-12-17 2014-02-11 Seagate Technology Llc Tunneling transistors
US9988713B2 (en) 2013-03-12 2018-06-05 Arizona Board Of Regents On Behalf Of Arizona State University Thin film devices and methods for preparing thin film devices
US9559249B2 (en) 2014-07-22 2017-01-31 Arizona Board Of Regents Microwave-annealed indium gallium zinc oxide films and methods of making the same
CN108666206B (zh) * 2018-05-25 2019-08-16 中国科学院微电子研究所 基于两步微波等离子体氧化的碳化硅氧化方法
JP7154708B2 (ja) * 2018-12-20 2022-10-18 東芝三菱電機産業システム株式会社 オゾンガス利用システム

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US4409260A (en) * 1979-08-15 1983-10-11 Hughes Aircraft Company Process for low-temperature surface layer oxidation of a semiconductor substrate
DE3680623D1 (de) * 1985-02-28 1991-09-05 Sony Corp Verfahren zur herstellung isolierender oxid-schichten auf einem halbleiterkoerper.
DE68922734T2 (de) * 1988-03-16 1995-09-14 Toshiba Kawasaki Kk VERFAHREN ZUR HERSTELLUNG EINES DüNNSCHICHTOXYDSUPRALEITERS.
JPH02266521A (ja) * 1989-04-07 1990-10-31 Shimada Phys & Chem Ind Co Ltd 有機物除去方法及び装置
JPH088251B2 (ja) * 1989-12-28 1996-01-29 日本電気株式会社 酸化シリコン膜の形成方法

Also Published As

Publication number Publication date
TW283808B (de) 1996-08-21
US5443863A (en) 1995-08-22
JPH10500386A (ja) 1998-01-13
ATE193066T1 (de) 2000-06-15
EP0750530B1 (de) 2000-05-17
WO1995024975A1 (en) 1995-09-21
AU2120095A (en) 1995-10-03
DE69517020D1 (de) 2000-06-21
EP0750530A1 (de) 1997-01-02
EP0750530A4 (de) 1997-05-21

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