DE69514057T2 - Photokoppler - Google Patents

Photokoppler

Info

Publication number
DE69514057T2
DE69514057T2 DE69514057T DE69514057T DE69514057T2 DE 69514057 T2 DE69514057 T2 DE 69514057T2 DE 69514057 T DE69514057 T DE 69514057T DE 69514057 T DE69514057 T DE 69514057T DE 69514057 T2 DE69514057 T2 DE 69514057T2
Authority
DE
Germany
Prior art keywords
photocoupler
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69514057T
Other languages
English (en)
Other versions
DE69514057D1 (de
Inventor
Hiroki Nagano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Renesas Electronics Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Publication of DE69514057D1 publication Critical patent/DE69514057D1/de
Application granted granted Critical
Publication of DE69514057T2 publication Critical patent/DE69514057T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
    • H01L31/16—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources
    • H01L31/167—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
DE69514057T 1994-09-08 1995-09-07 Photokoppler Expired - Lifetime DE69514057T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP21454194A JP2600616B2 (ja) 1994-09-08 1994-09-08 光結合装置

Publications (2)

Publication Number Publication Date
DE69514057D1 DE69514057D1 (de) 2000-01-27
DE69514057T2 true DE69514057T2 (de) 2000-05-25

Family

ID=16657453

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69514057T Expired - Lifetime DE69514057T2 (de) 1994-09-08 1995-09-07 Photokoppler

Country Status (4)

Country Link
US (1) US5665983A (de)
EP (1) EP0701289B1 (de)
JP (1) JP2600616B2 (de)
DE (1) DE69514057T2 (de)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19526313C2 (de) * 1995-07-19 2000-01-27 Preh Elektro Feinmechanik Diodenfassung für LED mit Steckverbindung und Vorwiderstand und Verfahren zu deren Herstellung
JPH09307144A (ja) * 1996-05-14 1997-11-28 Matsushita Electric Ind Co Ltd 発光素子及びその製造方法
JP3483234B2 (ja) * 1996-10-24 2004-01-06 シャープ株式会社 光学式センサ
US5833903A (en) 1996-12-10 1998-11-10 Great American Gumball Corporation Injection molding encapsulation for an electronic device directly onto a substrate
JP3970377B2 (ja) 1997-04-25 2007-09-05 沖電気工業株式会社 光半導体装置およびその製造方法
JP3676136B2 (ja) * 1999-08-23 2005-07-27 シャープ株式会社 光結合素子
JP3486900B2 (ja) 2000-02-15 2004-01-13 ソニー株式会社 発光装置およびそれを用いた光装置
US6712529B2 (en) * 2000-12-11 2004-03-30 Rohm Co., Ltd. Infrared data communication module and method of making the same
JP3939554B2 (ja) * 2002-01-15 2007-07-04 シャープ株式会社 半導体用リードフレーム
CN100359687C (zh) * 2002-06-28 2008-01-02 株式会社东芝 光耦合半导体器件及其制造方法
WO2004082036A1 (ja) * 2003-03-10 2004-09-23 Toyoda Gosei Co., Ltd. 固体素子デバイスおよびその製造方法
JP4029843B2 (ja) * 2004-01-19 2008-01-09 豊田合成株式会社 発光装置
JP2005159137A (ja) * 2003-11-27 2005-06-16 Sharp Corp 光半導体素子およびこの光半導体素子を用いた電子機器
JP4897530B2 (ja) * 2007-03-23 2012-03-14 ルネサスエレクトロニクス株式会社 フォトカプラおよびその組立方法
JP5026198B2 (ja) * 2007-08-28 2012-09-12 日立マクセル株式会社 レンズユニット、レンズモジュール、カメラモジュール及びカメラモジュール搭載回路基板の製造方法
JP5026199B2 (ja) * 2007-08-28 2012-09-12 日立マクセル株式会社 レンズユニット、レンズモジュール及びカメラモジュール
JP2010087422A (ja) * 2008-10-02 2010-04-15 Sharp Corp 光結合型半導体装置、及びそれを備える電子機器
US9236521B2 (en) * 2012-10-30 2016-01-12 Avago Technologies General Ip (Singapore) Pte. Ltd. Optocoupler having lens layer
CN103730456B (zh) * 2014-01-07 2017-02-08 苏州承源光电科技有限公司 一种耐高压光电耦合器
JP6092143B2 (ja) * 2014-03-14 2017-03-08 株式会社東芝 光結合装置
US10283699B2 (en) * 2016-01-29 2019-05-07 Avago Technologies International Sales Pte. Limited Hall-effect sensor isolator

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55154785A (en) * 1979-05-22 1980-12-02 Nec Corp Photo coupling device
DE3117571A1 (de) * 1981-05-04 1982-11-18 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Lumineszenz-halbleiterbauelement
JPS5998565A (ja) * 1982-11-27 1984-06-06 Toshiba Corp 光結合素子
JPS61296776A (ja) * 1985-06-25 1986-12-27 Nec Corp 光結合装置
JPS6281072A (ja) * 1985-10-04 1987-04-14 Sumitomo Bakelite Co Ltd フオトカプラ−用エポキシ樹脂組成物
US4686323A (en) * 1986-06-30 1987-08-11 The Standard Oil Company Multiple cell, two terminal photovoltaic device employing conductively adhered cells
JPS6327069A (ja) * 1986-07-18 1988-02-04 Nec Corp 光結合装置
JPH046214Y2 (de) 1986-08-06 1992-02-20
JPS63245968A (ja) * 1987-04-01 1988-10-13 Nec Corp 光結合装置
JPS6478056A (en) * 1987-09-19 1989-03-23 Fujitsu Ltd Method and device for selecting dte status
JPH0178056U (de) 1987-11-16 1989-05-25
JPH029181A (ja) * 1988-06-28 1990-01-12 Toshiba Corp 光結合半導体装置
JPH0273208A (ja) * 1988-09-08 1990-03-13 Nec Corp 光ファイバー実装方式
JPH0756568Y2 (ja) * 1990-05-02 1995-12-25 矢崎総業株式会社 電気接続箱
JPH0434985A (ja) 1990-05-30 1992-02-05 Sharp Corp 光結合装置
JPH05175543A (ja) * 1991-12-24 1993-07-13 Matsushita Electric Works Ltd 光結合型半導体リレー

Also Published As

Publication number Publication date
JP2600616B2 (ja) 1997-04-16
DE69514057D1 (de) 2000-01-27
JPH0878722A (ja) 1996-03-22
US5665983A (en) 1997-09-09
EP0701289A1 (de) 1996-03-13
EP0701289B1 (de) 1999-12-22

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: NEC COMPOUND SEMICONDUCTOR DEVICES, LTD., KAWASAKI

8327 Change in the person/name/address of the patent owner

Owner name: NEC ELECTRONICS CORP., KAWASAKI, KANAGAWA, JP

R082 Change of representative

Ref document number: 701289

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Representative=s name: VOSSIUS & PARTNER, DE

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Owner name: RENESAS ELECTRONICS CORPORATION, JP

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