DE69509248D1 - Gerät und verfahren zur in situ magnetron saübern von plasmareakter-kammern - Google Patents

Gerät und verfahren zur in situ magnetron saübern von plasmareakter-kammern

Info

Publication number
DE69509248D1
DE69509248D1 DE69509248T DE69509248T DE69509248D1 DE 69509248 D1 DE69509248 D1 DE 69509248D1 DE 69509248 T DE69509248 T DE 69509248T DE 69509248 T DE69509248 T DE 69509248T DE 69509248 D1 DE69509248 D1 DE 69509248D1
Authority
DE
Germany
Prior art keywords
plasma reactors
cleaning plasma
magnetron
situ
situ magnetron
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69509248T
Other languages
English (en)
Other versions
DE69509248T2 (de
Inventor
Paul Shufflebotham
Larry Hartsough
Dean Denison
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lam Research Corp
Original Assignee
Lam Research Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Research Corp filed Critical Lam Research Corp
Application granted granted Critical
Publication of DE69509248D1 publication Critical patent/DE69509248D1/de
Publication of DE69509248T2 publication Critical patent/DE69509248T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32798Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853Hygiene
    • H01J37/32862In situ cleaning of vessels and/or internal parts
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S156/00Adhesive bonding and miscellaneous chemical manufacture
    • Y10S156/916Differential etching apparatus including chamber cleaning means or shield for preventing deposits
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00Semiconductor device manufacturing: process
    • Y10S438/905Cleaning of reaction chamber

Landscapes

  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
DE69509248T 1994-09-19 1995-09-15 Gerät und verfahren zur in situ magnetron saübern von plasmareakter-kammern Expired - Lifetime DE69509248T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US30834194A 1994-09-19 1994-09-19
PCT/US1995/011989 WO1996009641A1 (en) 1994-09-19 1995-09-15 Apparatus and method for magnetron in-situ cleaning of plasma reaction chamber

Publications (2)

Publication Number Publication Date
DE69509248D1 true DE69509248D1 (de) 1999-05-27
DE69509248T2 DE69509248T2 (de) 1999-12-16

Family

ID=23193602

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69509248T Expired - Lifetime DE69509248T2 (de) 1994-09-19 1995-09-15 Gerät und verfahren zur in situ magnetron saübern von plasmareakter-kammern

Country Status (6)

Country Link
US (1) US5503676A (de)
EP (1) EP0784861B1 (de)
JP (1) JP3917176B2 (de)
DE (1) DE69509248T2 (de)
TW (1) TW306008B (de)
WO (1) WO1996009641A1 (de)

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US6210539B1 (en) 1997-05-14 2001-04-03 Applied Materials, Inc. Method and apparatus for producing a uniform density plasma above a substrate
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US6077402A (en) * 1997-05-16 2000-06-20 Applied Materials, Inc. Central coil design for ionized metal plasma deposition
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US6345588B1 (en) 1997-08-07 2002-02-12 Applied Materials, Inc. Use of variable RF generator to control coil voltage distribution
US5902461A (en) * 1997-09-03 1999-05-11 Applied Materials, Inc. Apparatus and method for enhancing uniformity of a metal film formed on a substrate with the aid of an inductively coupled plasma
US6042700A (en) * 1997-09-15 2000-03-28 Applied Materials, Inc. Adjustment of deposition uniformity in an inductively coupled plasma source
US6565717B1 (en) 1997-09-15 2003-05-20 Applied Materials, Inc. Apparatus for sputtering ionized material in a medium to high density plasma
US6023038A (en) * 1997-09-16 2000-02-08 Applied Materials, Inc. Resistive heating of powered coil to reduce transient heating/start up effects multiple loadlock system
US6280579B1 (en) 1997-12-19 2001-08-28 Applied Materials, Inc. Target misalignment detector
US6506287B1 (en) 1998-03-16 2003-01-14 Applied Materials, Inc. Overlap design of one-turn coil
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US6635569B1 (en) * 1998-04-20 2003-10-21 Tokyo Electron Limited Method of passivating and stabilizing a Ti-PECVD process chamber and combined Ti-PECVD/TiN-CVD processing method and apparatus
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US6238528B1 (en) 1998-10-13 2001-05-29 Applied Materials, Inc. Plasma density modulator for improved plasma density uniformity and thickness uniformity in an ionized metal plasma source
US6217718B1 (en) 1999-02-17 2001-04-17 Applied Materials, Inc. Method and apparatus for reducing plasma nonuniformity across the surface of a substrate in apparatus for producing an ionized metal plasma
US6242364B1 (en) 1999-03-23 2001-06-05 Silicon Valley Group, Inc. Plasma deposition of spin chucks to reduce contamination of silicon wafers
US20070048882A1 (en) * 2000-03-17 2007-03-01 Applied Materials, Inc. Method to reduce plasma-induced charging damage
US8617351B2 (en) 2002-07-09 2013-12-31 Applied Materials, Inc. Plasma reactor with minimal D.C. coils for cusp, solenoid and mirror fields for plasma uniformity and device damage reduction
US8048806B2 (en) * 2000-03-17 2011-11-01 Applied Materials, Inc. Methods to avoid unstable plasma states during a process transition
KR100346524B1 (ko) * 2000-10-14 2002-07-26 나기창 플라즈마를 이용한 반도체 웨이퍼 클리닝 장치
JP2002129334A (ja) * 2000-10-26 2002-05-09 Applied Materials Inc 気相堆積装置のクリーニング方法及び気相堆積装置
TWI283899B (en) * 2002-07-09 2007-07-11 Applied Materials Inc Capacitively coupled plasma reactor with magnetic plasma control
US7164095B2 (en) * 2004-07-07 2007-01-16 Noritsu Koki Co., Ltd. Microwave plasma nozzle with enhanced plume stability and heating efficiency
US7806077B2 (en) 2004-07-30 2010-10-05 Amarante Technologies, Inc. Plasma nozzle array for providing uniform scalable microwave plasma generation
US20060021980A1 (en) * 2004-07-30 2006-02-02 Lee Sang H System and method for controlling a power distribution within a microwave cavity
US7271363B2 (en) * 2004-09-01 2007-09-18 Noritsu Koki Co., Ltd. Portable microwave plasma systems including a supply line for gas and microwaves
US7189939B2 (en) * 2004-09-01 2007-03-13 Noritsu Koki Co., Ltd. Portable microwave plasma discharge unit
US20060052883A1 (en) * 2004-09-08 2006-03-09 Lee Sang H System and method for optimizing data acquisition of plasma using a feedback control module
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US8222125B2 (en) * 2010-08-12 2012-07-17 Ovshinsky Innovation, Llc Plasma deposition of amorphous semiconductors at microwave frequencies
CN103227090B (zh) * 2013-02-04 2016-04-06 深圳市劲拓自动化设备股份有限公司 一种线性等离子体源
US10811236B2 (en) * 2014-10-29 2020-10-20 General Plasma, Inc. Magnetic anode for sputter magnetron cathode

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Also Published As

Publication number Publication date
JP3917176B2 (ja) 2007-05-23
EP0784861B1 (de) 1999-04-21
JPH10506154A (ja) 1998-06-16
DE69509248T2 (de) 1999-12-16
TW306008B (de) 1997-05-21
EP0784861A1 (de) 1997-07-23
US5503676A (en) 1996-04-02
WO1996009641A1 (en) 1996-03-28

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