DE69507345D1 - Chemisch-mechanisches Verfahren und Vorrichtung zur Durchführung des Verfahrens - Google Patents

Chemisch-mechanisches Verfahren und Vorrichtung zur Durchführung des Verfahrens

Info

Publication number
DE69507345D1
DE69507345D1 DE69507345T DE69507345T DE69507345D1 DE 69507345 D1 DE69507345 D1 DE 69507345D1 DE 69507345 T DE69507345 T DE 69507345T DE 69507345 T DE69507345 T DE 69507345T DE 69507345 D1 DE69507345 D1 DE 69507345D1
Authority
DE
Germany
Prior art keywords
chemical
carrying
mechanical
mechanical method
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69507345T
Other languages
English (en)
Other versions
DE69507345T2 (de
Inventor
Yoshihiro Hayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Application granted granted Critical
Publication of DE69507345D1 publication Critical patent/DE69507345D1/de
Publication of DE69507345T2 publication Critical patent/DE69507345T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B57/00—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
DE69507345T 1994-02-14 1995-02-14 Chemisch-mechanisches Verfahren und Vorrichtung zur Durchführung des Verfahrens Expired - Lifetime DE69507345T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1708994A JP2738291B2 (ja) 1994-02-14 1994-02-14 機械・化学研磨方法および研磨装置

Publications (2)

Publication Number Publication Date
DE69507345D1 true DE69507345D1 (de) 1999-03-04
DE69507345T2 DE69507345T2 (de) 1999-09-02

Family

ID=11934266

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69507345T Expired - Lifetime DE69507345T2 (de) 1994-02-14 1995-02-14 Chemisch-mechanisches Verfahren und Vorrichtung zur Durchführung des Verfahrens

Country Status (5)

Country Link
US (1) US5603654A (de)
EP (1) EP0667211B1 (de)
JP (1) JP2738291B2 (de)
KR (1) KR0174106B1 (de)
DE (1) DE69507345T2 (de)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5798302A (en) * 1996-02-28 1998-08-25 Micron Technology, Inc. Low friction polish-stop stratum for endpointing chemical-mechanical planarization processing of semiconductor wafers
AUPO399596A0 (en) * 1996-12-02 1997-01-02 Resmed Limited A harness assembly for a nasal mask
US6093484A (en) * 1997-04-04 2000-07-25 Hoya Corporation Method for the production of glass product
KR20000019872A (ko) * 1998-09-16 2000-04-15 유현식 웨이퍼 절연층 연마용 슬러리의 제조방법
US6095902A (en) * 1998-09-23 2000-08-01 Rodel Holdings, Inc. Polyether-polyester polyurethane polishing pads and related methods
JP3538042B2 (ja) * 1998-11-24 2004-06-14 松下電器産業株式会社 スラリー供給装置及びスラリー供給方法
JP4604727B2 (ja) * 1998-12-25 2011-01-05 日立化成工業株式会社 Ｃｍｐ研磨剤用添加液
KR20000055130A (ko) * 1999-02-03 2000-09-05 유현식 균일한 입자분포를 갖는 반도체소자 ｃｍｐ용 금속산화물 슬러리의 제조방법
KR100347317B1 (ko) * 1999-06-04 2002-08-07 제일모직주식회사 반도체 소자 ｃｍｐ용 금속산화물 슬러리의 분산방법
EP1691401B1 (de) * 1999-06-18 2012-06-13 Hitachi Chemical Co., Ltd. Verfahren ein substrat zu polieren unter verwendung eines cmp schleifmittels
US6419554B2 (en) * 1999-06-24 2002-07-16 Micron Technology, Inc. Fixed abrasive chemical-mechanical planarization of titanium nitride
KR20010004982A (ko) * 1999-06-30 2001-01-15 김영환 반도체 소자의 산화막 연마용 슬러리 제조 방법
KR100627510B1 (ko) * 2002-12-30 2006-09-22 주식회사 하이닉스반도체 나이트라이드용 ｃｍｐ 슬러리
JP4776387B2 (ja) * 2006-02-06 2011-09-21 日立化成工業株式会社 酸化セリウム研磨剤および基板の研磨法
JP4776388B2 (ja) * 2006-02-06 2011-09-21 日立化成工業株式会社 酸化セリウム研磨剤および基板の研磨法
KR100850085B1 (ko) * 2006-12-28 2008-08-04 동부일렉트로닉스 주식회사 Ｃｍｐ 공정용 슬러리의 희석방법
DE102010028461B4 (de) * 2010-04-30 2014-07-10 Globalfoundries Dresden Module One Limited Liability Company & Co. Kg Einebnung eines Materialsystems in einem Halbleiterbauelement unter Anwendung eines nicht-selektiven in-situ zubereiteten Schleifmittels
US9303187B2 (en) * 2013-07-22 2016-04-05 Cabot Microelectronics Corporation Compositions and methods for CMP of silicon oxide, silicon nitride, and polysilicon materials
JP5843036B1 (ja) * 2015-06-23 2016-01-13 コニカミノルタ株式会社 再生研磨材スラリーの調製方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3500591A (en) * 1966-11-21 1970-03-17 Owens Illinois Inc Glass grinding method and apparatus
US3638366A (en) * 1969-12-03 1972-02-01 Norton Co Lapping method for metallic workpieces
JPS5128295A (de) * 1974-09-04 1976-03-10 Hitachi Ltd
US4059929A (en) * 1976-05-10 1977-11-29 Chemical-Ways Corporation Precision metering system for the delivery of abrasive lapping and polishing slurries
EP0031204B1 (de) * 1979-11-29 1984-06-06 Rhone-Poulenc Industries Verfahren zum Polieren mineralischer und organischer Werkstoffe
SU1042968A1 (ru) * 1981-10-12 1983-09-23 Предприятие П/Я Р-6496 Способ обработки неметаллических материалов свободным абразивом
US4435247A (en) * 1983-03-10 1984-03-06 International Business Machines Corporation Method for polishing titanium carbide
JPH02172666A (ja) * 1988-12-23 1990-07-04 Yamau Sangyo Kk 研磨粒
JPH0475338A (ja) * 1990-07-18 1992-03-10 Seiko Epson Corp 機械・化学研磨法
JP2689706B2 (ja) * 1990-08-08 1997-12-10 上村工業株式会社 研磨方法
EP0520109B1 (de) * 1991-05-28 1995-03-29 Rodel, Inc. Polierbreie aus Silika mit geringem Gehalt an Natrium und an Metallen
JP3060714B2 (ja) * 1992-04-15 2000-07-10 日本電気株式会社 半導体集積回路の製造方法

Also Published As

Publication number Publication date
EP0667211A1 (de) 1995-08-16
US5603654A (en) 1997-02-18
JP2738291B2 (ja) 1998-04-08
EP0667211B1 (de) 1999-01-20
KR0174106B1 (ko) 1999-04-01
DE69507345T2 (de) 1999-09-02
JPH07226388A (ja) 1995-08-22
KR950025903A (ko) 1995-09-18

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