DE69502643D1 - Licht-detektierende Vorrichtung unter Verwendung eines Halbleiterlasers - Google Patents

Licht-detektierende Vorrichtung unter Verwendung eines Halbleiterlasers

Info

Publication number
DE69502643D1
DE69502643D1 DE69502643T DE69502643T DE69502643D1 DE 69502643 D1 DE69502643 D1 DE 69502643D1 DE 69502643 T DE69502643 T DE 69502643T DE 69502643 T DE69502643 T DE 69502643T DE 69502643 D1 DE69502643 D1 DE 69502643D1
Authority
DE
Germany
Prior art keywords
semiconductor laser
detecting device
light detecting
light
laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69502643T
Other languages
English (en)
Other versions
DE69502643T2 (de
Inventor
Hideaki Iwano
Osamu Yokoyama
Hiroaki Nomura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Application granted granted Critical
Publication of DE69502643D1 publication Critical patent/DE69502643D1/de
Publication of DE69502643T2 publication Critical patent/DE69502643T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/005—Optical devices external to the laser cavity, specially adapted for lasers, e.g. for homogenisation of the beam or for manipulating laser pulses, e.g. pulse shaping
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34313—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/18—Semiconductor lasers with special structural design for influencing the near- or far-field
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2004—Confining in the direction perpendicular to the layer structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34313—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs
    • H01S5/3432—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs the whole junction comprising only (AI)GaAs
DE69502643T 1994-03-01 1995-02-28 Licht-detektierende Vorrichtung unter Verwendung eines Halbleiterlasers Expired - Lifetime DE69502643T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5658094 1994-03-01

Publications (2)

Publication Number Publication Date
DE69502643D1 true DE69502643D1 (de) 1998-07-02
DE69502643T2 DE69502643T2 (de) 1998-11-12

Family

ID=13031110

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69502643T Expired - Lifetime DE69502643T2 (de) 1994-03-01 1995-02-28 Licht-detektierende Vorrichtung unter Verwendung eines Halbleiterlasers

Country Status (4)

Country Link
US (1) US5623509A (de)
EP (1) EP0670618B1 (de)
KR (1) KR100350012B1 (de)
DE (1) DE69502643T2 (de)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3640097B2 (ja) * 1994-12-14 2005-04-20 セイコーエプソン株式会社 光センシング装置
JP3314616B2 (ja) * 1995-10-05 2002-08-12 株式会社デンソー 大出力用半導体レーザ素子
JP3339369B2 (ja) 1997-05-30 2002-10-28 株式会社デンソー レーザダイオード
JPH11243259A (ja) 1997-12-25 1999-09-07 Denso Corp 半導体レーザおよび半導体レーザの駆動方法
EP0968833B1 (de) * 1998-07-03 2004-11-10 Fuji Photo Film Co., Ltd. Bildaufzeichnungsgerät
US6381677B1 (en) 1998-08-19 2002-04-30 International Business Machines Corporation Method and system for staging data into cache
JP2000310679A (ja) 1999-02-24 2000-11-07 Denso Corp 半導体投光装置および距離測定装置
US7042810B2 (en) * 2000-01-31 2006-05-09 Kabushiki Kaisha Toshiba Thermally-assisted magnetic recording head, method of manufacturing the same, and thermally-assisted magnetic recording apparatus
DE102004047969A1 (de) * 2003-10-06 2005-04-21 Denso Corp Optische Halbleitervorrichtung und Verfahren zu deren Herstellung
DE102004037907A1 (de) * 2004-08-05 2006-03-16 Robert Bosch Gmbh Radarsensor für Kraftfahrzeuge
US7193202B2 (en) * 2004-09-23 2007-03-20 Vrije Universiteit Brussel Photovoltage detector
JP5091177B2 (ja) * 2009-03-19 2012-12-05 株式会社デンソー 半導体レーザ構造
DE102013114226B4 (de) * 2013-12-17 2019-03-07 Osram Opto Semiconductors Gmbh Halbleiterlaserdiode, Verfahren zur Herstellung einer Halbleiterlaserdiode und Halbleiterlaserdiodenanordnung
US10084282B1 (en) 2017-08-14 2018-09-25 The United States Of America As Represented By The Secretary Of The Air Force Fundamental mode operation in broad area quantum cascade lasers
US11031753B1 (en) 2017-11-13 2021-06-08 The Government Of The United States Of America As Represented By The Secretary Of The Air Force Extracting the fundamental mode in broad area quantum cascade lasers

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4092659A (en) * 1977-04-28 1978-05-30 Rca Corporation Multi-layer reflector for electroluminescent device
JPS58199447A (ja) * 1982-05-14 1983-11-19 Hitachi Ltd 光学式読取装置
JPS59198377A (ja) * 1983-04-27 1984-11-10 Nippon Soken Inc 車両用障害物検知装置
JPS61149876A (ja) * 1984-12-24 1986-07-08 Meisei Electric Co Ltd 測距用信号の送信装置
JPS61149919A (ja) * 1984-12-25 1986-07-08 Fujitsu Ltd スリツト光源
JPS63199301A (ja) * 1987-02-14 1988-08-17 Victor Co Of Japan Ltd レンズ
JPH0642582B2 (ja) * 1988-06-27 1994-06-01 シャープ株式会社 誘電体多層被覆膜
JPH06103543B2 (ja) * 1988-12-31 1994-12-14 三星電子株式会社 レーザピックアップ
US5189679A (en) * 1991-09-06 1993-02-23 The Boeing Company Strained quantum well laser for high temperature operation
JPH05190977A (ja) * 1992-01-18 1993-07-30 Seiko Epson Corp 半導体レーザ
JPH05190976A (ja) * 1992-01-18 1993-07-30 Seiko Epson Corp 半導体レーザ
DE69324733T2 (de) * 1992-02-05 1999-10-07 Mitsui Chemicals Inc Halbleiterlaserelement und damit hergestellter laser
JPH05333149A (ja) * 1992-06-01 1993-12-17 Seiko Epson Corp 光センサ
US5317586A (en) * 1992-08-12 1994-05-31 Xerox Corporation Buried layer III-V semiconductor devices with impurity induced layer disordering

Also Published As

Publication number Publication date
DE69502643T2 (de) 1998-11-12
EP0670618B1 (de) 1998-05-27
KR100350012B1 (ko) 2002-12-16
EP0670618A1 (de) 1995-09-06
KR950034939A (ko) 1995-12-28
US5623509A (en) 1997-04-22

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