DE69501690T2 - Elektroplattierungslösung zur Herstellung von Elektrodenhöckern aus Pb-Sn Legierungen auf der Oberfläche von Halbleiterwafern - Google Patents

Elektroplattierungslösung zur Herstellung von Elektrodenhöckern aus Pb-Sn Legierungen auf der Oberfläche von Halbleiterwafern

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Publication number
DE69501690T2
DE69501690T2 DE69501690T DE69501690T DE69501690T2 DE 69501690 T2 DE69501690 T2 DE 69501690T2 DE 69501690 T DE69501690 T DE 69501690T DE 69501690 T DE69501690 T DE 69501690T DE 69501690 T2 DE69501690 T2 DE 69501690T2
Authority
DE
Germany
Prior art keywords
alloys
production
semiconductor wafers
electroplating solution
electrode bumps
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69501690T
Other languages
English (en)
Other versions
DE69501690D1 (de
Inventor
Naoki C O Sanda Kojyo Uchiyama
Masayoshi C O Sanda K Kohinata
Akihiro C O Chuo Kenkyu Masuda
Yoshiaki C O Daiwa Fin Okuhama
Kobe-Shi Ltd
Seishi C O Daiwa Fine C Masaki
Masakazu C O Daiwa F Yoshimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
DAIWA FINE CHEMICALS CO
Daiwa Fine Chemicals Co Ltd
Mitsubishi Materials Corp
Original Assignee
DAIWA FINE CHEMICALS CO
Daiwa Fine Chemicals Co Ltd
Mitsubishi Materials Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP10001595A external-priority patent/JP3334421B2/ja
Priority claimed from JP10001495A external-priority patent/JPH08269776A/ja
Application filed by DAIWA FINE CHEMICALS CO, Daiwa Fine Chemicals Co Ltd, Mitsubishi Materials Corp filed Critical DAIWA FINE CHEMICALS CO
Application granted granted Critical
Publication of DE69501690D1 publication Critical patent/DE69501690D1/de
Publication of DE69501690T2 publication Critical patent/DE69501690T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C25D3/56—Electroplating: Baths therefor from solutions of alloys
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C25D3/56—Electroplating: Baths therefor from solutions of alloys
    • C25D3/60—Electroplating: Baths therefor from solutions of alloys containing more than 50% by weight of tin
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/11—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01015—Phosphorus [P]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01019—Potassium [K]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01022—Titanium [Ti]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01023—Vanadium [V]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01037—Rubidium [Rb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01039—Yttrium [Y]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01088—Radium [Ra]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/014—Solder alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/157—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2924/15738—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950 C and less than 1550 C
    • H01L2924/15747—Copper [Cu] as principal constituent

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Electroplating And Plating Baths Therefor (AREA)
  • Electroplating Methods And Accessories (AREA)
DE69501690T 1994-06-30 1995-06-30 Elektroplattierungslösung zur Herstellung von Elektrodenhöckern aus Pb-Sn Legierungen auf der Oberfläche von Halbleiterwafern Expired - Lifetime DE69501690T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP17195394 1994-06-30
JP10001595A JP3334421B2 (ja) 1994-06-30 1995-03-31 半導体ウエハ表面へのＰｂ−Ｓｎ合金突起電極形成用電気メッキ液
JP10001495A JPH08269776A (ja) 1995-03-31 1995-03-31 半導体ウエハ表面へのＰｂ−Ｓｎ合金突起電極形成用電気メッキ液

Publications (2)

Publication Number Publication Date
DE69501690D1 DE69501690D1 (de) 1998-04-09
DE69501690T2 true DE69501690T2 (de) 1998-07-16

Family

ID=27309116

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69501690T Expired - Lifetime DE69501690T2 (de) 1994-06-30 1995-06-30 Elektroplattierungslösung zur Herstellung von Elektrodenhöckern aus Pb-Sn Legierungen auf der Oberfläche von Halbleiterwafern

Country Status (3)

Country Link
US (1) US5651873A (de)
EP (1) EP0690149B1 (de)
DE (1) DE69501690T2 (de)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6248334B1 (en) * 1997-01-08 2001-06-19 Henry M. Jackson Foundation For The Advancement Of Military Medicine Process for preparing conjugate vaccines including free protein and the conjugate vaccines, immunogens, and immunogenic reagents produced by this process
US6162652A (en) * 1997-12-31 2000-12-19 Intel Corporation Process for sort testing C4 bumped wafers
US5965945A (en) * 1998-11-12 1999-10-12 Advanced Micro Devices, Inc. Graded PB for C4 pump technology
WO2000040779A1 (en) 1998-12-31 2000-07-13 Semitool, Inc. Method, chemistry, and apparatus for high deposition rate solder electroplating on a microelectronic workpiece
AU2003272790A1 (en) * 2002-10-08 2004-05-04 Honeywell International Inc. Semiconductor packages, lead-containing solders and anodes and methods of removing alpha-emitters from materials
US20050085062A1 (en) * 2003-10-15 2005-04-21 Semitool, Inc. Processes and tools for forming lead-free alloy solder precursors
WO2009150485A1 (en) * 2008-06-09 2009-12-17 Commissariat A L'energie Atomique Electrode for lead-acid battery and method for producing such an electrode
CN101748425B (zh) * 2008-12-05 2014-07-09 宜兴方晶科技有限公司 甲基磺酸亚锡制备方法
CN103102290B (zh) * 2012-11-09 2015-03-04 柳州百韧特先进材料有限公司 一种避免甲基磺酸亚锡发黄的处理方法
US9546433B1 (en) 2015-11-24 2017-01-17 International Business Machines Corporation Separation of alpha emitting species from plating baths
US9359687B1 (en) 2015-11-24 2016-06-07 International Business Machines Corporation Separation of alpha emitting species from plating baths
CN106083663B (zh) * 2016-05-30 2018-01-09 柳州百韧特先进材料有限公司 一种提高甲基磺酸亚锡产品澄清度的方法
CN106008285B (zh) * 2016-05-30 2018-01-09 柳州百韧特先进材料有限公司 一种甲基磺酸亚锡固体的保护处理方法
CN106521570A (zh) * 2016-09-14 2017-03-22 湖北大学 电镀光亮用锡以及锡合金的稳定剂及其制备方法
US11268203B2 (en) * 2017-10-24 2022-03-08 Mitsubishi Materials Corporation Tin or tin alloy plating solution
JP6620858B2 (ja) * 2017-10-24 2019-12-18 三菱マテリアル株式会社 錫又は錫合金めっき堆積層の形成方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3905878A (en) * 1970-11-16 1975-09-16 Hyogo Prefectural Government Electrolyte for and method of bright electroplating of tin-lead alloy
JPS5967387A (ja) * 1982-10-08 1984-04-17 Hiyougoken すず、鉛及びすず―鉛合金メッキ浴
US4582576A (en) * 1985-03-26 1986-04-15 Mcgean-Rohco, Inc. Plating bath and method for electroplating tin and/or lead
US4923576A (en) * 1988-07-06 1990-05-08 Technic, Inc. Additives for electroplating compositions and methods for their use
DE3902042A1 (de) * 1989-01-25 1990-07-26 Blasberg Oberflaechentech Waessrige, saure loesungen fuer die elektrolytische abscheidung von zinn und/oder blei/zinnlegierungen
US4885064A (en) * 1989-05-22 1989-12-05 Mcgean-Rohco, Inc. Additive composition, plating bath and method for electroplating tin and/or lead
US5160422A (en) * 1989-05-29 1992-11-03 Shimizu Co., Ltd. Bath for immersion plating tin-lead alloys

Also Published As

Publication number Publication date
EP0690149B1 (de) 1998-03-04
EP0690149A1 (de) 1996-01-03
DE69501690D1 (de) 1998-04-09
US5651873A (en) 1997-07-29

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