DE69431148T2 - Methode zur Analyse von Oberflächen verunreinigungen auf Halbleitersubstraten - Google Patents

Methode zur Analyse von Oberflächen verunreinigungen auf Halbleitersubstraten

Info

Publication number
DE69431148T2
DE69431148T2 DE69431148T DE69431148T DE69431148T2 DE 69431148 T2 DE69431148 T2 DE 69431148T2 DE 69431148 T DE69431148 T DE 69431148T DE 69431148 T DE69431148 T DE 69431148T DE 69431148 T2 DE69431148 T2 DE 69431148T2
Authority
DE
Germany
Prior art keywords
semiconductor substrate
measured
oxide layer
areas
droplets
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69431148T
Other languages
German (de)
English (en)
Other versions
DE69431148D1 (de
Inventor
Ayako Shimazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of DE69431148D1 publication Critical patent/DE69431148D1/de
Publication of DE69431148T2 publication Critical patent/DE69431148T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H10P74/23—
    • H10P74/203—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T436/00—Chemistry: analytical and immunological testing
    • Y10T436/25—Chemistry: analytical and immunological testing including sample preparation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T436/00—Chemistry: analytical and immunological testing
    • Y10T436/25—Chemistry: analytical and immunological testing including sample preparation
    • Y10T436/25375—Liberation or purification of sample or separation of material from a sample [e.g., filtering, centrifuging, etc.]

Landscapes

  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Sampling And Sample Adjustment (AREA)
DE69431148T 1993-12-09 1994-12-07 Methode zur Analyse von Oberflächen verunreinigungen auf Halbleitersubstraten Expired - Fee Related DE69431148T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP30899793A JP3278513B2 (ja) 1993-12-09 1993-12-09 半導体基板の不純物分析方法

Publications (2)

Publication Number Publication Date
DE69431148D1 DE69431148D1 (de) 2002-09-12
DE69431148T2 true DE69431148T2 (de) 2003-03-27

Family

ID=17987683

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69431148T Expired - Fee Related DE69431148T2 (de) 1993-12-09 1994-12-07 Methode zur Analyse von Oberflächen verunreinigungen auf Halbleitersubstraten

Country Status (6)

Country Link
US (1) US5633172A (enExample)
EP (1) EP0657924B1 (enExample)
JP (1) JP3278513B2 (enExample)
KR (1) KR100254015B1 (enExample)
DE (1) DE69431148T2 (enExample)
TW (1) TW267247B (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5709744A (en) * 1996-03-01 1998-01-20 Motorola Masking methods during semiconductor device fabrication
JP2882377B2 (ja) * 1996-08-23 1999-04-12 日本電気株式会社 金属の回収容器及び金属の回収方法
EP0838850A3 (en) * 1996-10-24 1999-05-06 Hamamatsu Photonics K.K. Method for placing flourescent single molecules on surface of substrate and method for visualizing structural defect of surface of substrate
KR100230990B1 (en) * 1996-12-18 1999-11-15 Samsung Electronics Co Ltd Analysis method of aluminum layer for semiconductor wafer
JP3336898B2 (ja) 1997-02-28 2002-10-21 三菱電機株式会社 シリコンウエハ表面の不純物回収方法およびその装置
US5922606A (en) * 1997-09-16 1999-07-13 Nalco Chemical Company Fluorometric method for increasing the efficiency of the rinsing and water recovery process in the manufacture of semiconductor chips
US6210640B1 (en) 1998-06-08 2001-04-03 Memc Electronic Materials, Inc. Collector for an automated on-line bath analysis system
US6420275B1 (en) 1999-08-30 2002-07-16 Micron Technology, Inc. System and method for analyzing a semiconductor surface
KR100906916B1 (ko) * 2004-01-29 2009-07-08 유겐카이샤 나스 기켄 기판 검사 장치, 기판 검사 방법, 및 회수 치구
JP4772610B2 (ja) * 2006-07-19 2011-09-14 東京エレクトロン株式会社 分析方法

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3660250A (en) * 1967-12-22 1972-05-02 Ibm Method of determining impurity profile of a semiconductor body
US4168212A (en) * 1974-05-16 1979-09-18 The Post Office Determining semiconductor characteristic
US4180439A (en) * 1976-03-15 1979-12-25 International Business Machines Corporation Anodic etching method for the detection of electrically active defects in silicon
JPH0658927B2 (ja) * 1983-09-26 1994-08-03 株式会社東芝 半導体薄膜の分析方法および分析用試料の回収装置
JPS617639A (ja) * 1984-06-22 1986-01-14 Toshiba Corp 半導体薄膜の分解装置
JPH0625717B2 (ja) * 1988-04-25 1994-04-06 株式会社東芝 不純物の測定方法
US4990459A (en) * 1988-04-25 1991-02-05 Kabushiki Kaisha Toshiba Impurity measuring method
JP2604037B2 (ja) * 1988-07-11 1997-04-23 株式会社東芝 半導体処理装置
JP2772035B2 (ja) * 1989-05-31 1998-07-02 東芝セラミックス株式会社 ウエハ表面の不純物量の測定方法
JPH03239343A (ja) * 1990-02-17 1991-10-24 Sharp Corp ウエハ表面液滴回収装置
JPH04110653A (ja) * 1990-08-31 1992-04-13 Hitachi Ltd プラズマを用いた気体試料の分析方法
GB9022003D0 (en) * 1990-10-10 1990-11-21 Interox Chemicals Ltd Purification of hydrogen peroxide
JP2568756B2 (ja) * 1990-12-27 1997-01-08 松下電器産業株式会社 半導体基板表面の不純物回収装置
JPH05343494A (ja) * 1992-06-09 1993-12-24 Nec Corp 半導体装置の製造工程における汚染物の分析法
US5385629A (en) * 1993-10-14 1995-01-31 Micron Semiconductor, Inc. After etch test method and apparatus

Also Published As

Publication number Publication date
TW267247B (enExample) 1996-01-01
EP0657924B1 (en) 2002-08-07
DE69431148D1 (de) 2002-09-12
EP0657924A2 (en) 1995-06-14
JPH07161791A (ja) 1995-06-23
KR100254015B1 (ko) 2000-05-01
JP3278513B2 (ja) 2002-04-30
EP0657924A3 (en) 1996-07-10
US5633172A (en) 1997-05-27

Similar Documents

Publication Publication Date Title
DE69517988T2 (de) Selektive entfernung von material durch bestrahlung
DE3751134T2 (de) Simultanes Ätzen von Mehrschicht- und Bildstrukturen.
DE3000746C2 (de) Verfahren zur Erzeugung von mikroskopischen Bildern
DE69032277T2 (de) Optisches Nahfeld-Verfahren für Mikrolithographie und Mikrolithographie-Vorrichtungen unter Verwendung desselben
DE69431148T2 (de) Methode zur Analyse von Oberflächen verunreinigungen auf Halbleitersubstraten
DE2429026A1 (de) Verfahren zum kopieren von duennfilmmustern auf einem substrat und vorrichtung zur durchfuehrung des verfahrens
DE10142316A1 (de) Halbleiterstruktur und Verfahren zur Bestimmung kritischer Dimensionen und Überlagerungsfehler
DE2754396A1 (de) Verfahren zum herstellen von duennfilmmustern
DE4102422A1 (de) Verfahren zur herstellung einer in mehreren ebenen angeordneten leiterstruktur einer halbleitervorrichtung
DE68920291T2 (de) Verfahren zum Herstellen von leitenden Bahnen und Stützen.
DE4203410A1 (de) Lithografievorrichtung
DE3046856C2 (enExample)
DE3038185C2 (de) Verfahren zum Ätzen eines Musters aus einer Schicht
DE3783239T2 (de) Roentgenstrahlmaske.
DE3703516A1 (de) Verfahren und vorrichtung zum ausrichten
DE2803732A1 (de) Pruefverfahren fuer integrierte halbleiteranordnungen
DE69220846T2 (de) Verfahren zur Herstellung eines Halbleiterbauelements mit Ionenimplantierung
DE2832151C2 (de) Verfahren zum Prüfen eines Musters aus einem elektrisch leitfähigen Film
DE3628015A1 (de) Verfahren und vorrichtung zum entwickeln eines musters
DE4203804C2 (de) Verfahren zur Herstellung von Kontakten auf einer mit einer UV-transparenten Isolationsschicht bedeckten leitenden Struktur in höchstintegrierten Schaltkreisen
DE69615642T2 (de) Verfahren zur Herstellung einer Halbleiteranordnung
DE69226234T2 (de) Verfahren zur Herstellung metrologischen Strukturen besonders geeignet für die Bestimmung der Präzision in Vorrichtungen, die den Abstand auf bearbeiteten Substraten messen
DE102004028425B4 (de) Halbleiterbauelement mit einer Messstruktur und Verfahren zum Messen des Halbleiterbauelements unter Verwendung der Messstruktur
DE102004010363A1 (de) Verfahren und Meßgerät zur Bestimmung einer örtlichen Variation des Reflektions- oder Transmissionsverhaltens über die Oberfläche einer Maske
DE102005008068A1 (de) Verfahren zum Analysieren eines Metallelementes auf einem Wafer

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee