DE69430939D1 - Intelligentes Leistungsbauelement - Google Patents

Intelligentes Leistungsbauelement

Info

Publication number
DE69430939D1
DE69430939D1 DE69430939T DE69430939T DE69430939D1 DE 69430939 D1 DE69430939 D1 DE 69430939D1 DE 69430939 T DE69430939 T DE 69430939T DE 69430939 T DE69430939 T DE 69430939T DE 69430939 D1 DE69430939 D1 DE 69430939D1
Authority
DE
Germany
Prior art keywords
power component
intelligent power
intelligent
component
power
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69430939T
Other languages
English (en)
Other versions
DE69430939T2 (de
Inventor
Koichi Endo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Publication of DE69430939D1 publication Critical patent/DE69430939D1/de
Application granted granted Critical
Publication of DE69430939T2 publication Critical patent/DE69430939T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
    • H01L27/0623—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with bipolar transistors
DE69430939T 1993-10-29 1994-10-28 Intelligentes Leistungsbauelement Expired - Fee Related DE69430939T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP05272478A JP3135762B2 (ja) 1993-10-29 1993-10-29 半導体集積回路装置

Publications (2)

Publication Number Publication Date
DE69430939D1 true DE69430939D1 (de) 2002-08-14
DE69430939T2 DE69430939T2 (de) 2003-01-23

Family

ID=17514489

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69430939T Expired - Fee Related DE69430939T2 (de) 1993-10-29 1994-10-28 Intelligentes Leistungsbauelement

Country Status (5)

Country Link
US (1) US5512777A (de)
EP (1) EP0651442B1 (de)
JP (1) JP3135762B2 (de)
KR (1) KR0179680B1 (de)
DE (1) DE69430939T2 (de)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3372171B2 (ja) * 1995-08-29 2003-01-27 東芝マイクロエレクトロニクス株式会社 半導体装置
US5798538A (en) * 1995-11-17 1998-08-25 International Rectifier Corporation IGBT with integrated control
US5767561A (en) * 1997-05-09 1998-06-16 Lucent Technologies Inc. Integrated circuit device with isolated circuit elements
KR100319615B1 (ko) * 1999-04-16 2002-01-09 김영환 반도체 장치에서의 소자격리방법
DE10014659C2 (de) * 2000-03-24 2002-08-01 Infineon Technologies Ag Halbleiterschaltungsanordnung und entsprechende Herstellungsverfahren
JP4750933B2 (ja) 2000-09-28 2011-08-17 株式会社東芝 薄型パンチスルー型パワーデバイス
US6975015B2 (en) * 2003-12-03 2005-12-13 International Business Machines Corporation Modulated trigger device
JP2006245489A (ja) 2005-03-07 2006-09-14 Toshiba Corp 半導体装置
JP5463698B2 (ja) * 2009-03-12 2014-04-09 富士電機株式会社 半導体素子、半導体装置および半導体素子の製造方法
WO2011027474A1 (ja) * 2009-09-07 2011-03-10 トヨタ自動車株式会社 ダイオード領域とｉｇｂｔ領域を有する半導体基板を備える半導体装置
US20110260245A1 (en) * 2010-04-23 2011-10-27 Taiwan Semiconductor Manufacturing Company, Ltd. Cost Effective Global Isolation and Power Dissipation For Power Integrated Circuit Device
US20130341673A1 (en) * 2012-06-21 2013-12-26 Infineon Technologies Ag Reverse Conducting IGBT
US9214521B2 (en) * 2012-06-21 2015-12-15 Infineon Technologies Ag Reverse conducting IGBT
US9362349B2 (en) * 2012-06-21 2016-06-07 Infineon Technologies Ag Semiconductor device with charge carrier lifetime reduction means
CN113921395A (zh) * 2021-10-13 2022-01-11 南瑞联研半导体有限责任公司 一种低损耗igbt芯片集电极结构及其制备方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2138275A1 (en) * 1971-05-21 1973-01-05 Comp Generale Electricite Reducing the lifetime of carriers - in logic circuits attached to analogue circuits
US4053925A (en) * 1975-08-07 1977-10-11 Ibm Corporation Method and structure for controllng carrier lifetime in semiconductor devices
JPS63254762A (ja) * 1987-04-13 1988-10-21 Nissan Motor Co Ltd Ｃｍｏｓ半導体装置
JPH0821678B2 (ja) * 1987-05-29 1996-03-04 日産自動車株式会社 半導体装置
JPH0821679B2 (ja) * 1987-07-03 1996-03-04 日産自動車株式会社 半導体装置
US4881115A (en) * 1987-12-28 1989-11-14 Motorola Inc. Bipolar semiconductor device having a conductive recombination layer

Also Published As

Publication number Publication date
JPH07130865A (ja) 1995-05-19
KR0179680B1 (ko) 1999-03-20
US5512777A (en) 1996-04-30
EP0651442A1 (de) 1995-05-03
JP3135762B2 (ja) 2001-02-19
EP0651442B1 (de) 2002-07-10
KR950012710A (ko) 1995-05-16
DE69430939T2 (de) 2003-01-23

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee