DE69416796T2 - Leistungsumwandler - Google Patents

Leistungsumwandler

Info

Publication number
DE69416796T2
DE69416796T2 DE69416796T DE69416796T DE69416796T2 DE 69416796 T2 DE69416796 T2 DE 69416796T2 DE 69416796 T DE69416796 T DE 69416796T DE 69416796 T DE69416796 T DE 69416796T DE 69416796 T2 DE69416796 T2 DE 69416796T2
Authority
DE
Germany
Prior art keywords
power converter
converter
power
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69416796T
Other languages
English (en)
Other versions
DE69416796D1 (de
Inventor
Atsushi Umeda
Norihito Tokura
Hirohide Sato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Denso Corp
Original Assignee
Denso Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Denso Corp filed Critical Denso Corp
Publication of DE69416796D1 publication Critical patent/DE69416796D1/de
Application granted granted Critical
Publication of DE69416796T2 publication Critical patent/DE69416796T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7803—Vertical DMOS transistors, i.e. VDMOS transistors structurally associated with at least one other device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/781—Inverted VDMOS transistors, i.e. Source-Down VDMOS transistors
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02J—CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
    • H02J7/00—Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries
    • H02J7/14—Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries for charging batteries from dynamo-electric generators driven at varying speed, e.g. on vehicle
    • H02J7/1469—Regulation of the charging current or voltage otherwise than by variation of field
    • H02J7/1492—Regulation of the charging current or voltage otherwise than by variation of field by means of controlling devices between the generator output and the battery
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02K—DYNAMO-ELECTRIC MACHINES
    • H02K11/00—Structural association of dynamo-electric machines with electric components or with devices for shielding, monitoring or protection
    • H02K11/04—Structural association of dynamo-electric machines with electric components or with devices for shielding, monitoring or protection for rectification
    • H02K11/049—Rectifiers associated with stationary parts, e.g. stator cores
    • H02K11/05—Rectifiers associated with casings, enclosures or brackets
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
    • H02M7/003—Constructional details, e.g. physical layout, assembly, wiring or busbar connections
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
    • H01L29/1608—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/45—Ohmic electrodes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02T—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO TRANSPORTATION
    • Y02T10/00—Road transport of goods or passengers
    • Y02T10/80—Technologies aiming to reduce greenhouse gasses emissions common to all road transportation technologies
    • Y02T10/92—Energy efficient charging or discharging systems for batteries, ultracapacitors, supercapacitors or double-layer capacitors specially adapted for vehicles
DE69416796T 1993-12-07 1994-12-06 Leistungsumwandler Expired - Lifetime DE69416796T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP30678293A JP3223671B2 (ja) 1993-12-07 1993-12-07 車両用交流発電機の三相全波整流器

Publications (2)

Publication Number Publication Date
DE69416796D1 DE69416796D1 (de) 1999-04-08
DE69416796T2 true DE69416796T2 (de) 1999-10-28

Family

ID=17961201

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69416796T Expired - Lifetime DE69416796T2 (de) 1993-12-07 1994-12-06 Leistungsumwandler

Country Status (3)

Country Link
EP (1) EP0657947B1 (de)
JP (1) JP3223671B2 (de)
DE (1) DE69416796T2 (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102006033667B4 (de) * 2005-07-27 2016-07-28 Mitsubishi Denki K.K. Rotierende elektrische Maschine mit integriertem Wechselrichter

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5780953A (en) * 1993-12-07 1998-07-14 Nippondenso Co., Ltd. Alternator
JPH08336268A (ja) * 1995-06-06 1996-12-17 Nippondenso Co Ltd 車両用交流発電機
JPH08336259A (ja) * 1995-06-06 1996-12-17 Nippondenso Co Ltd 車両用交流発電機
US6573534B1 (en) 1995-09-06 2003-06-03 Denso Corporation Silicon carbide semiconductor device
DE19636302C2 (de) * 1995-09-06 1998-08-20 Denso Corp Siliziumkarbidhalbleitervorrichtung und Verfahren zur Herstellung
US6133587A (en) * 1996-01-23 2000-10-17 Denso Corporation Silicon carbide semiconductor device and process for manufacturing same
JP3471509B2 (ja) * 1996-01-23 2003-12-02 株式会社デンソー 炭化珪素半導体装置
US10205017B2 (en) * 2009-06-17 2019-02-12 Alpha And Omega Semiconductor Incorporated Bottom source NMOS triggered Zener clamp for configuring an ultra-low voltage transient voltage suppressor (TVS)
WO2024024934A1 (ja) * 2022-07-28 2024-02-01 新電元工業株式会社 バッテリ充電装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6180858A (ja) * 1984-09-28 1986-04-24 Hitachi Ltd パワ−ｍｏｓｆｅｔ
JP2786196B2 (ja) * 1987-07-21 1998-08-13 株式会社デンソー 絶縁ゲート型半導体装置
JP2959640B2 (ja) 1990-09-27 1999-10-06 本田技研工業株式会社 充電回路
US5233215A (en) * 1992-06-08 1993-08-03 North Carolina State University At Raleigh Silicon carbide power MOSFET with floating field ring and floating field plate

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102006033667B4 (de) * 2005-07-27 2016-07-28 Mitsubishi Denki K.K. Rotierende elektrische Maschine mit integriertem Wechselrichter

Also Published As

Publication number Publication date
JPH07163149A (ja) 1995-06-23
DE69416796D1 (de) 1999-04-08
EP0657947A1 (de) 1995-06-14
EP0657947B1 (de) 1999-03-03
JP3223671B2 (ja) 2001-10-29

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Legal Events

Date Code Title Description
8320 Willingness to grant licences declared (paragraph 23)
8364 No opposition during term of opposition