DE69427929T2 - Halbleiterspeicher mit eingebautem parallelen Bitprüfmodus - Google Patents
Halbleiterspeicher mit eingebautem parallelen BitprüfmodusInfo
- Publication number
- DE69427929T2 DE69427929T2 DE69427929T DE69427929T DE69427929T2 DE 69427929 T2 DE69427929 T2 DE 69427929T2 DE 69427929 T DE69427929 T DE 69427929T DE 69427929 T DE69427929 T DE 69427929T DE 69427929 T2 DE69427929 T2 DE 69427929T2
- Authority
- DE
- Germany
- Prior art keywords
- built
- semiconductor memory
- check mode
- parallel bit
- bit check
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
- G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
- G11C29/18—Address generation devices; Devices for accessing memories, e.g. details of addressing circuits
- G11C29/26—Accessing multiple arrays
- G11C29/28—Dependent multiple arrays, e.g. multi-bit arrays
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
- G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
- G11C29/18—Address generation devices; Devices for accessing memories, e.g. details of addressing circuits
- G11C29/30—Accessing single arrays
- G11C29/34—Accessing multiple bits simultaneously
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/006—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation at wafer scale level, i.e. wafer scale integration [WSI]
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
- G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
- G11C29/14—Implementation of control logic, e.g. test mode decoders
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
- G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
- G11C29/18—Address generation devices; Devices for accessing memories, e.g. details of addressing circuits
- G11C29/24—Accessing extra cells, e.g. dummy cells or redundant cells
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
- G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
- G11C29/38—Response verification devices
- G11C29/40—Response verification devices using compression techniques
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
- G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
- G11C29/44—Indication or identification of errors, e.g. for repair
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP05171393A JP3293935B2 (ja) | 1993-03-12 | 1993-03-12 | 並列ビットテストモード内蔵半導体メモリ |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69427929D1 DE69427929D1 (de) | 2001-09-20 |
DE69427929T2 true DE69427929T2 (de) | 2002-04-04 |
Family
ID=12894541
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69427929T Expired - Fee Related DE69427929T2 (de) | 1993-03-12 | 1994-01-03 | Halbleiterspeicher mit eingebautem parallelen Bitprüfmodus |
Country Status (5)
Country | Link |
---|---|
US (1) | US5809225A (de) |
EP (2) | EP0615251B1 (de) |
JP (1) | JP3293935B2 (de) |
KR (1) | KR960016805B1 (de) |
DE (1) | DE69427929T2 (de) |
Families Citing this family (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0669620B1 (de) * | 1994-02-25 | 2001-10-24 | Kabushiki Kaisha Toshiba | Multiplexer |
DE69505806T2 (de) * | 1994-04-29 | 1999-05-12 | Texas Instruments Inc | Verfahren und vorrichtung zur prüfung eines speichers mit einer parallelen block-schreib-operation |
DE19607724A1 (de) * | 1996-02-29 | 1997-09-04 | Siemens Ag | Schaltungsanordnung für einen programmierbaren nichtflüchtigen Speicher |
US5781486A (en) * | 1996-04-16 | 1998-07-14 | Micron Technology Corporation | Apparatus for testing redundant elements in a packaged semiconductor memory device |
US5706292A (en) | 1996-04-25 | 1998-01-06 | Micron Technology, Inc. | Layout for a semiconductor memory device having redundant elements |
US5734617A (en) * | 1996-08-01 | 1998-03-31 | Micron Technology Corporation | Shared pull-up and selection circuitry for programmable cells such as antifuse cells |
JP3313591B2 (ja) * | 1996-10-02 | 2002-08-12 | 株式会社東芝 | 半導体装置、半導体装置の検査方法及び半導体装置の検査装置 |
JPH10177496A (ja) * | 1996-12-13 | 1998-06-30 | Hitachi Ltd | エラー検出機能を有する論理回路およびエラー検出機能を有する論理回路を備えるプロセッサ |
US6104209A (en) | 1998-08-27 | 2000-08-15 | Micron Technology, Inc. | Low skew differential receiver with disable feature |
KR100269319B1 (ko) * | 1997-12-29 | 2000-10-16 | 윤종용 | 동시칼럼선택라인활성화회로를구비하는반도체메모리장치및칼럼선택라인제어방법 |
US6212482B1 (en) | 1998-03-06 | 2001-04-03 | Micron Technology, Inc. | Circuit and method for specifying performance parameters in integrated circuits |
KR100322525B1 (ko) * | 1998-03-23 | 2002-06-22 | 윤종용 | 출력드라이버를공유하는병렬비트테스트회로및이를이용한병렬비트테스트방법 |
US6452845B1 (en) | 1999-01-07 | 2002-09-17 | Micron Technology, Inc. | Apparatus for testing redundant elements in a packaged semiconductor memory device |
KR100520217B1 (ko) * | 1999-02-03 | 2005-10-12 | 삼성전자주식회사 | 패러럴 비트 테스트 기능을 갖는 반도체 메모리 장치 |
US6357027B1 (en) * | 1999-05-17 | 2002-03-12 | Infineon Technologies Ag | On chip data comparator with variable data and compare result compression |
KR100402103B1 (ko) * | 2001-09-20 | 2003-10-17 | 주식회사 하이닉스반도체 | 웨이퍼 번-인 테스트 모드 및 웨이퍼 테스트 모드 회로 |
US6915467B2 (en) * | 2001-12-11 | 2005-07-05 | International Business Machines Corporation | System and method for testing a column redundancy of an integrated circuit memory |
US6700142B1 (en) | 2001-12-31 | 2004-03-02 | Hyperchip Inc. | Semiconductor wafer on which is fabricated an integrated circuit including an array of discrete functional modules |
US20030212935A1 (en) * | 2002-05-09 | 2003-11-13 | Roark Rodney W. | Circuit and method for accelerating the test time of a serial access memory device |
JP2004079072A (ja) * | 2002-08-16 | 2004-03-11 | Oki Electric Ind Co Ltd | 半導体記憶装置のテスト方法及び半導体記憶装置 |
US7003704B2 (en) * | 2002-11-12 | 2006-02-21 | International Business Machines Corporation | Two-dimensional redundancy calculation |
KR100464436B1 (ko) * | 2002-11-20 | 2004-12-31 | 삼성전자주식회사 | 병렬비트 테스트시 데이터 입출력 포맷을 변환하는 회로및 방법 |
KR100541048B1 (ko) * | 2003-06-16 | 2006-01-11 | 삼성전자주식회사 | 반도체 메모리 장치 및 이 장치의 테스트 방법 |
KR100535251B1 (ko) * | 2004-06-12 | 2005-12-08 | 삼성전자주식회사 | 내부 데이터 확인이 가능한 반도체 메모리 장치 내부의병렬 비트 테스트 회로 및 이를 이용한 병렬 비트 테스트방법. |
US7373573B2 (en) * | 2005-06-06 | 2008-05-13 | International Business Machines Corporation | Apparatus and method for using a single bank of eFuses to successively store testing data from multiple stages of testing |
US20070109888A1 (en) * | 2005-11-14 | 2007-05-17 | Ronald Baker | Integrated circuit with test circuit |
KR101468026B1 (ko) * | 2007-05-14 | 2014-12-02 | 삼성전자주식회사 | 메모리 셀 프로그래밍 방법 및 반도체 장치 |
KR101929983B1 (ko) | 2012-07-18 | 2018-12-17 | 삼성전자주식회사 | 저항성 메모리 셀을 갖는 반도체 메모리 장치 및 그 테스트 방법 |
US10522206B2 (en) * | 2017-04-06 | 2019-12-31 | SK Hynix Inc. | Semiconductor device and system |
KR20220048735A (ko) | 2020-10-13 | 2022-04-20 | 삼성전자주식회사 | 테스트 시간을 줄이는 메모리 장치의 테스트 방법, 메모리 빌트-인 셀프 테스트(mbist) 회로 및 메모리 장치 |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4611299A (en) * | 1982-02-22 | 1986-09-09 | Hitachi, Ltd. | Monolithic storage device |
JPS60115099A (ja) * | 1983-11-25 | 1985-06-21 | Fujitsu Ltd | 半導体記憶装置 |
JPS62293598A (ja) * | 1986-06-12 | 1987-12-21 | Toshiba Corp | 半導体記憶装置 |
EP0257987B1 (de) * | 1986-08-22 | 1991-11-06 | Fujitsu Limited | Halbleiter-Speicheranordnung |
EP0264893B1 (de) * | 1986-10-20 | 1995-01-18 | Nippon Telegraph And Telephone Corporation | Halbleiterspeicher |
US4954992A (en) * | 1987-12-24 | 1990-09-04 | Mitsubishi Denki Kabushiki Kaisha | Random access memory having separate read out and write in bus lines for reduced access time and operating method therefor |
GB2222461B (en) * | 1988-08-30 | 1993-05-19 | Mitsubishi Electric Corp | On chip testing of semiconductor memory devices |
KR920001082B1 (ko) * | 1989-06-13 | 1992-02-01 | 삼성전자 주식회사 | 반도체 메모리장치에 있어서 메모리 테스트용 멀티바이트 광역 병렬 라이트회로 |
US5264743A (en) * | 1989-12-08 | 1993-11-23 | Hitachi, Ltd. | Semiconductor memory operating with low supply voltage |
JP3112019B2 (ja) * | 1989-12-08 | 2000-11-27 | 株式会社日立製作所 | 半導体装置 |
US5301155A (en) * | 1990-03-20 | 1994-04-05 | Mitsubishi Denki Kabushiki Kaisha | Multiblock semiconduction storage device including simultaneous operation of a plurality of block defect determination circuits |
ATE104465T1 (de) * | 1990-05-10 | 1994-04-15 | Siemens Ag | Integrierter halbleiterspeicher mit paralleltestmoeglichkeit und redundanzverfahren. |
US5265100A (en) * | 1990-07-13 | 1993-11-23 | Sgs-Thomson Microelectronics, Inc. | Semiconductor memory with improved test mode |
JPH04362592A (ja) * | 1991-06-08 | 1992-12-15 | Hitachi Ltd | 半導体記憶装置 |
JP2812004B2 (ja) * | 1991-06-27 | 1998-10-15 | 日本電気株式会社 | スタティック型ランダムアクセスメモリ装置 |
KR950001293B1 (ko) * | 1992-04-22 | 1995-02-15 | 삼성전자주식회사 | 반도체 메모리칩의 병렬테스트 회로 |
-
1993
- 1993-03-12 JP JP05171393A patent/JP3293935B2/ja not_active Expired - Fee Related
-
1994
- 1994-01-03 EP EP94100019A patent/EP0615251B1/de not_active Expired - Lifetime
- 1994-01-03 EP EP99104096A patent/EP0929077A3/de not_active Withdrawn
- 1994-01-03 DE DE69427929T patent/DE69427929T2/de not_active Expired - Fee Related
- 1994-03-12 KR KR1019940004909A patent/KR960016805B1/ko not_active IP Right Cessation
-
1995
- 1995-09-26 US US08/534,239 patent/US5809225A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
EP0929077A2 (de) | 1999-07-14 |
EP0615251B1 (de) | 2001-08-16 |
US5809225A (en) | 1998-09-15 |
DE69427929D1 (de) | 2001-09-20 |
EP0929077A3 (de) | 2000-06-07 |
KR940022583A (ko) | 1994-10-21 |
JPH06267295A (ja) | 1994-09-22 |
JP3293935B2 (ja) | 2002-06-17 |
KR960016805B1 (ko) | 1996-12-21 |
EP0615251A2 (de) | 1994-09-14 |
EP0615251A3 (de) | 1997-02-12 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |