DE69425897D1 - Verfahren und Struktur zur elektronischen Messung des Parameter eines Strahls - Google Patents

Verfahren und Struktur zur elektronischen Messung des Parameter eines Strahls

Info

Publication number
DE69425897D1
DE69425897D1 DE69425897T DE69425897T DE69425897D1 DE 69425897 D1 DE69425897 D1 DE 69425897D1 DE 69425897 T DE69425897 T DE 69425897T DE 69425897 T DE69425897 T DE 69425897T DE 69425897 D1 DE69425897 D1 DE 69425897D1
Authority
DE
Germany
Prior art keywords
parameter
electronically measuring
electronically
measuring
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69425897T
Other languages
English (en)
Other versions
DE69425897T2 (de
Inventor
Richard W Prior
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Etec Systems Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Etec Systems Inc filed Critical Etec Systems Inc
Application granted granted Critical
Publication of DE69425897D1 publication Critical patent/DE69425897D1/de
Publication of DE69425897T2 publication Critical patent/DE69425897T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/29—Measurement performed on radiation beams, e.g. position or section of the beam; Measurement of spatial distribution of radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/245—Detection characterised by the variable being measured
    • H01J2237/24507—Intensity, dose or other characteristics of particle beams or electromagnetic radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/304—Controlling tubes
    • H01J2237/30433—System calibration
    • H01J2237/3045—Deflection calibration

Landscapes

  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Molecular Biology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electron Beam Exposure (AREA)
  • Measurement Of Radiation (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
DE69425897T 1993-03-26 1994-03-25 Verfahren und Struktur zur elektronischen Messung des Parameter eines Strahls Expired - Fee Related DE69425897T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/037,964 US5345085A (en) 1993-03-26 1993-03-26 Method and structure for electronically measuring beam parameters

Publications (2)

Publication Number Publication Date
DE69425897D1 true DE69425897D1 (de) 2000-10-19
DE69425897T2 DE69425897T2 (de) 2001-01-11

Family

ID=21897315

Family Applications (2)

Application Number Title Priority Date Filing Date
DE69425995T Expired - Fee Related DE69425995T2 (de) 1993-03-26 1994-03-25 Verfahren und Vorrichtung zur elektronischen Messung von Strahl-Parametern
DE69425897T Expired - Fee Related DE69425897T2 (de) 1993-03-26 1994-03-25 Verfahren und Struktur zur elektronischen Messung des Parameter eines Strahls

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE69425995T Expired - Fee Related DE69425995T2 (de) 1993-03-26 1994-03-25 Verfahren und Vorrichtung zur elektronischen Messung von Strahl-Parametern

Country Status (6)

Country Link
US (1) US5345085A (de)
EP (2) EP0617454B1 (de)
JP (1) JP2860247B2 (de)
KR (1) KR100196121B1 (de)
CA (1) CA2117119C (de)
DE (2) DE69425995T2 (de)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3101539B2 (ja) * 1994-06-24 2000-10-23 インターナショナル・ビジネス・マシーンズ・コーポレ−ション 電子線ナノメトロジー・システム
US5798528A (en) * 1997-03-11 1998-08-25 International Business Machines Corporation Correction of pattern dependent position errors in electron beam lithography
US6278124B1 (en) 1998-03-05 2001-08-21 Dupont Photomasks, Inc Electron beam blanking method and system for electron beam lithographic processing
US6941006B1 (en) * 1998-03-05 2005-09-06 Dupont Photomasks, Inc. Method and system for calibrating the scan amplitude of an electron beam lithography instrument
US6133987A (en) * 1998-10-22 2000-10-17 Nikon Corporation Technique for reducing pattern placement error in projection electron-beam lithography
KR100555470B1 (ko) * 1999-04-06 2006-03-03 삼성전자주식회사 노광 장치의 그리드 보정 방법
US6407396B1 (en) * 1999-06-24 2002-06-18 International Business Machines Corporation Wafer metrology structure
JP3646139B2 (ja) * 2001-12-28 2005-05-11 独立行政法人 宇宙航空研究開発機構 荷電粒子測定装置
JP4167904B2 (ja) * 2003-01-06 2008-10-22 株式会社日立ハイテクノロジーズ 電子ビーム描画装置及び電子ビーム描画方法
US6925414B2 (en) * 2003-03-14 2005-08-02 Eastman Kodak Company Apparatus and method of measuring features of an article
US7417234B2 (en) * 2004-05-17 2008-08-26 Massachusetts Institute Of Technology Spatial-phase locking of energy beams for determining two-dimensional location and beam shape
DE102005000813B4 (de) * 2005-01-05 2013-12-24 Applied Materials Gmbh Verfahren zur Strahlkalibrierung und Verwendungen eines Kalibrierungskörpers
JP4520426B2 (ja) * 2005-07-04 2010-08-04 株式会社ニューフレアテクノロジー 電子ビームのビームドリフト補正方法及び電子ビームの描画方法
US7456414B2 (en) * 2005-09-28 2008-11-25 Applied Materials, Inc. Beam re-registration system and method
KR100669213B1 (ko) * 2006-07-12 2007-01-16 (주)정엔지니어링 침하방지용 상수도관 설치구조
KR100887021B1 (ko) 2007-10-02 2009-03-04 주식회사 동부하이텍 노광장비의 전자빔 장치
DE602008003970D1 (de) * 2008-02-08 2011-01-27 Integrated Circuit Testing Strahlstromkalibriersystem
JP5123730B2 (ja) * 2008-05-01 2013-01-23 株式会社ニューフレアテクノロジー 偏向アンプのセトリング時間検査方法及び偏向アンプの故障判定方法
JP5087679B2 (ja) * 2008-07-30 2012-12-05 株式会社ニューフレアテクノロジー 電子ビーム装置
JP2013042114A (ja) * 2011-07-19 2013-02-28 Canon Inc 描画装置、及び、物品の製造方法
AU2018273352B2 (en) 2017-05-22 2023-07-27 Howmedica Osteonics Corp. Device for in-situ fabrication process monitoring and feedback control of an electron beam additive manufacturing process
EP3597333A1 (de) 2018-07-19 2020-01-22 Howmedica Osteonics Corporation System und verfahren für prozessinterne elektronenstrahlprofil- und positionsanalysen

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4546260A (en) * 1983-06-30 1985-10-08 International Business Machines Corporation Alignment technique
US4677296A (en) * 1984-09-24 1987-06-30 Siemens Aktiengesellschaft Apparatus and method for measuring lengths in a scanning particle microscope
US4796038A (en) * 1985-07-24 1989-01-03 Ateq Corporation Laser pattern generation apparatus
JPH063725B2 (ja) * 1986-05-21 1994-01-12 株式会社アドバンテスト ストロボ電子ビ−ム装置における電子ビ−ムの位置決め方法
US4818885A (en) * 1987-06-30 1989-04-04 International Business Machines Corporation Electron beam writing method and system using large range deflection in combination with a continuously moving table
US4885472A (en) * 1988-03-14 1989-12-05 The Perkin-Elmer Corporation Silicon grid as a reference and calibration standard in a particle beam lithography system
JPH0282515A (ja) * 1988-09-19 1990-03-23 Matsushita Electron Corp 電子ビーム描画方法
US5079112A (en) * 1989-08-07 1992-01-07 At&T Bell Laboratories Device manufacture involving lithographic processing
US5043586A (en) * 1990-10-25 1991-08-27 International Business Machines Corporation Planarized, reusable calibration grids
US5136169A (en) * 1991-04-05 1992-08-04 Massachusetts Institute Of Technology Energy beam locating

Also Published As

Publication number Publication date
EP0617454B1 (de) 2000-09-27
EP0721202A2 (de) 1996-07-10
EP0721202A3 (de) 1998-02-25
US5345085A (en) 1994-09-06
DE69425897T2 (de) 2001-01-11
CA2117119A1 (en) 1994-09-27
JPH0794381A (ja) 1995-04-07
CA2117119C (en) 2000-02-29
EP0721202B1 (de) 2000-09-13
JP2860247B2 (ja) 1999-02-24
DE69425995D1 (de) 2000-11-02
KR940022774A (ko) 1994-10-21
DE69425995T2 (de) 2001-02-08
EP0617454A1 (de) 1994-09-28
KR100196121B1 (ko) 1999-06-15

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: APPLIED MATERIALS, INC. (N.D.GES.D. STAATES DELAWA

8339 Ceased/non-payment of the annual fee