DE69425854T2 - Verfahren zum Herstellen einer Substratstruktur mit verbesserter Wärmezerstreuung - Google Patents

Verfahren zum Herstellen einer Substratstruktur mit verbesserter Wärmezerstreuung

Info

Publication number
DE69425854T2
DE69425854T2 DE69425854T DE69425854T DE69425854T2 DE 69425854 T2 DE69425854 T2 DE 69425854T2 DE 69425854 T DE69425854 T DE 69425854T DE 69425854 T DE69425854 T DE 69425854T DE 69425854 T2 DE69425854 T2 DE 69425854T2
Authority
DE
Germany
Prior art keywords
producing
heat dissipation
substrate structure
improved heat
improved
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69425854T
Other languages
English (en)
Other versions
DE69425854D1 (de
Inventor
Randy L Pollock
George F Anderson
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NXP USA Inc
Original Assignee
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Inc filed Critical Motorola Inc
Publication of DE69425854D1 publication Critical patent/DE69425854D1/de
Application granted granted Critical
Publication of DE69425854T2 publication Critical patent/DE69425854T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3732—Diamonds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/135—Removal of substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/15—Silicon on sapphire SOS
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/977—Thinning or removal of substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
DE69425854T 1993-07-29 1994-06-27 Verfahren zum Herstellen einer Substratstruktur mit verbesserter Wärmezerstreuung Expired - Fee Related DE69425854T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/099,682 US5354717A (en) 1993-07-29 1993-07-29 Method for making a substrate structure with improved heat dissipation

Publications (2)

Publication Number Publication Date
DE69425854D1 DE69425854D1 (de) 2000-10-19
DE69425854T2 true DE69425854T2 (de) 2001-03-29

Family

ID=22276130

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69425854T Expired - Fee Related DE69425854T2 (de) 1993-07-29 1994-06-27 Verfahren zum Herstellen einer Substratstruktur mit verbesserter Wärmezerstreuung

Country Status (5)

Country Link
US (1) US5354717A (de)
EP (2) EP0814509A3 (de)
JP (1) JPH0778908A (de)
DE (1) DE69425854T2 (de)
SG (1) SG52267A1 (de)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5698474A (en) * 1996-02-26 1997-12-16 Hypervision, Inc. High speed diamond-based machining of silicon semiconductor die in wafer and packaged form for backside emission microscope detection
US5786236A (en) * 1996-03-29 1998-07-28 Eastman Kodak Company Backside thinning using ion-beam figuring
US5895972A (en) * 1996-12-31 1999-04-20 Intel Corporation Method and apparatus for cooling the backside of a semiconductor device using an infrared transparent heat slug
US5923086A (en) * 1997-05-14 1999-07-13 Intel Corporation Apparatus for cooling a semiconductor die
US6570247B1 (en) 1997-12-30 2003-05-27 Intel Corporation Integrated circuit device having an embedded heat slug
SE9903242D0 (sv) * 1999-09-13 1999-09-13 Acreo Ab A semiconductor device
JP2001244357A (ja) * 2000-03-02 2001-09-07 Sumitomo Electric Ind Ltd パッケージ及びその製造方法
WO2001069676A2 (en) * 2000-03-13 2001-09-20 Sun Microsystems, Inc. Method and apparatus for bonding substrates
US6338754B1 (en) 2000-05-31 2002-01-15 Us Synthetic Corporation Synthetic gasket material
GB2371922B (en) 2000-09-21 2004-12-15 Cambridge Semiconductor Ltd Semiconductor device and method of forming a semiconductor device
US6541303B2 (en) * 2001-06-20 2003-04-01 Micron Technology, Inc. Method for conducting heat in a flip-chip assembly
FR2826508B1 (fr) 2001-06-20 2004-05-28 Alstom Module electronique de puissance et composant de puissance destine a equiper un tel module
US6770966B2 (en) 2001-07-31 2004-08-03 Intel Corporation Electronic assembly including a die having an integrated circuit and a layer of diamond to transfer heat
US20030152773A1 (en) * 2002-02-14 2003-08-14 Chrysler Gregory M. Diamond integrated heat spreader and method of manufacturing same
US6936497B2 (en) 2002-12-24 2005-08-30 Intel Corporation Method of forming electronic dies wherein each die has a layer of solid diamond
US6924170B2 (en) * 2003-06-30 2005-08-02 Intel Corporation Diamond-silicon hybrid integrated heat spreader
US6987028B2 (en) 2003-07-24 2006-01-17 Intel Corporation Method of fabricating a microelectronic die
US20050236716A1 (en) * 2004-04-22 2005-10-27 Hsuch-Chung Chen Heat dissipation structure and method thereof
US7675079B1 (en) 2004-10-28 2010-03-09 Kley Victor B Diamond coating of silicon-carbide LEDs
US7183641B2 (en) 2005-03-30 2007-02-27 Intel Corporation Integrated heat spreader with intermetallic layer and method for making
WO2007084501A2 (en) * 2006-01-13 2007-07-26 Group4 Labs, Llc Method for manufacturing smooth diamond heat sinks
CN111933758B (zh) * 2020-07-13 2023-07-18 福建晶安光电有限公司 衬底加工方法、外延用衬底及半导体发光元件及制造方法

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2542500B1 (fr) * 1983-03-11 1986-08-29 Thomson Csf Procede de fabrication d'un dispositif semiconducteur du type comprenant au moins une couche de silicium deposee sur un substrat isolant
US4689583A (en) * 1984-02-13 1987-08-25 Raytheon Company Dual diode module with heat sink, for use in a cavity power combiner
US4946716A (en) * 1985-05-31 1990-08-07 Tektronix, Inc. Method of thinning a silicon wafer using a reinforcing material
NL8501773A (nl) * 1985-06-20 1987-01-16 Philips Nv Werkwijze voor het vervaardigen van halfgeleiderinrichtingen.
GB2182200B (en) * 1985-08-31 1989-04-26 Plessey Co Plc Mesa semiconductor device
US5196375A (en) * 1987-07-24 1993-03-23 Kabushiki Kaisha Toshiba Method for manufacturing bonded semiconductor body
US5131963A (en) * 1987-11-16 1992-07-21 Crystallume Silicon on insulator semiconductor composition containing thin synthetic diamone films
JPH067594B2 (ja) * 1987-11-20 1994-01-26 富士通株式会社 半導体基板の製造方法
NL8800953A (nl) * 1988-04-13 1989-11-01 Philips Nv Werkwijze voor het vervaardigen van een halfgeleiderlichaam.
US4981818A (en) * 1990-02-13 1991-01-01 General Electric Company Polycrystalline CVD diamond substrate for single crystal epitaxial growth of semiconductors
US5034343A (en) * 1990-03-08 1991-07-23 Harris Corporation Manufacturing ultra-thin wafer using a handle wafer
US5070040A (en) * 1990-03-09 1991-12-03 University Of Colorado Foundation, Inc. Method and apparatus for semiconductor circuit chip cooling
US5126206A (en) * 1990-03-20 1992-06-30 Diamonex, Incorporated Diamond-on-a-substrate for electronic applications
US5120495A (en) * 1990-08-27 1992-06-09 The Standard Oil Company High thermal conductivity metal matrix composite
US5045972A (en) * 1990-08-27 1991-09-03 The Standard Oil Company High thermal conductivity metal matrix composite
US5124179A (en) * 1990-09-13 1992-06-23 Diamonex, Incorporated Interrupted method for producing multilayered polycrystalline diamond films
JP3028660B2 (ja) * 1991-10-21 2000-04-04 住友電気工業株式会社 ダイヤモンドヒートシンクの製造方法
US5128006A (en) * 1991-01-23 1992-07-07 At&T Bell Laboratories Deposition of diamond films on semicondutor substrates
US5299214A (en) * 1991-07-01 1994-03-29 Sumitomo Electric Industries, Ltd. Heat radiating component and semiconductor device provided with the same
WO1993001617A1 (en) * 1991-07-08 1993-01-21 Asea Brown Boveri Ab Method for the manufacture of a semiconductor component
US5334306A (en) * 1991-12-11 1994-08-02 At&T Bell Laboratories Metallized paths on diamond surfaces
DE59208893D1 (de) * 1992-01-23 1997-10-16 Siemens Ag Halbleitermodul mit hoher Isolations- und Wärmefähigkeit

Also Published As

Publication number Publication date
EP0814509A2 (de) 1997-12-29
SG52267A1 (en) 1998-09-28
US5354717A (en) 1994-10-11
EP0637077A1 (de) 1995-02-01
EP0814509A3 (de) 1998-02-04
DE69425854D1 (de) 2000-10-19
JPH0778908A (ja) 1995-03-20
EP0637077B1 (de) 2000-09-13

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8328 Change in the person/name/address of the agent

Free format text: SCHUMACHER & WILLSAU, PATENTANWALTSSOZIETAET, 80335 MUENCHEN

8327 Change in the person/name/address of the patent owner

Owner name: FREESCALE SEMICONDUCTOR, INC., AUSTIN, TEX., US

8339 Ceased/non-payment of the annual fee