DE69421964T2 - Integrierter Schaltungszusammenbau von höher Dichte und Betriebssicherheit und Herstellungsverfahren - Google Patents

Integrierter Schaltungszusammenbau von höher Dichte und Betriebssicherheit und Herstellungsverfahren

Info

Publication number
DE69421964T2
DE69421964T2 DE69421964T DE69421964T DE69421964T2 DE 69421964 T2 DE69421964 T2 DE 69421964T2 DE 69421964 T DE69421964 T DE 69421964T DE 69421964 T DE69421964 T DE 69421964T DE 69421964 T2 DE69421964 T2 DE 69421964T2
Authority
DE
Germany
Prior art keywords
integrated circuit
manufacturing process
high density
circuit assembly
operational reliability
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69421964T
Other languages
English (en)
Other versions
DE69421964D1 (de
Inventor
Eric Muller
Marc Masgrangeas
Vera Augustin Coello
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Alcatel Lucent SAS
Original Assignee
Alcatel SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Alcatel SA filed Critical Alcatel SA
Publication of DE69421964D1 publication Critical patent/DE69421964D1/de
Application granted granted Critical
Publication of DE69421964T2 publication Critical patent/DE69421964T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/52Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/538Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
    • H01L23/5385Assembly of a plurality of insulating substrates
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/065Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L25/0652Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00 the devices being arranged next and on each other, i.e. mixed assemblies
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/4824Connecting between the body and an opposite side of the item with respect to the body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42Wire connectors; Manufacturing methods related thereto
    • H01L24/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/00014Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01087Francium [Fr]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/14Integrated circuits
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161Cap
    • H01L2924/162Disposition
    • H01L2924/1627Disposition stacked type assemblies, e.g. stacked multi-cavities
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901Structure
    • H01L2924/1904Component type
    • H01L2924/19041Component type being a capacitor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30Technical effects
    • H01L2924/301Electrical effects
    • H01L2924/3025Electromagnetic shielding
DE69421964T 1993-06-08 1994-06-03 Integrierter Schaltungszusammenbau von höher Dichte und Betriebssicherheit und Herstellungsverfahren Expired - Fee Related DE69421964T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9306840A FR2706222B1 (fr) 1993-06-08 1993-06-08 Assemblage haute densité, haute fiabilité de circuits intégrés et son procédé de réalisation.

Publications (2)

Publication Number Publication Date
DE69421964D1 DE69421964D1 (de) 2000-01-13
DE69421964T2 true DE69421964T2 (de) 2000-08-17

Family

ID=9447866

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69421964T Expired - Fee Related DE69421964T2 (de) 1993-06-08 1994-06-03 Integrierter Schaltungszusammenbau von höher Dichte und Betriebssicherheit und Herstellungsverfahren

Country Status (5)

Country Link
US (1) US5818108A (de)
EP (1) EP0629000B1 (de)
CA (1) CA2125266C (de)
DE (1) DE69421964T2 (de)
FR (1) FR2706222B1 (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1997044824A1 (en) * 1996-05-20 1997-11-27 Ibm Corporation High-density, integrated circuit chip package
CN100452331C (zh) * 2006-12-31 2009-01-14 徐中祐 裸芯片积木式封装方法
CN103296014A (zh) * 2012-02-28 2013-09-11 刘胜 扇出晶圆级半导体芯片三维堆叠封装结构及工艺
CN115441135B (zh) * 2022-08-09 2023-12-01 中国电子科技集团公司第五十五研究所 一种高可靠超宽带三维堆叠微波组件及其制作方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4074342A (en) * 1974-12-20 1978-02-14 International Business Machines Corporation Electrical package for lsi devices and assembly process therefor
US4000509A (en) * 1975-03-31 1976-12-28 International Business Machines Corporation High density air cooled wafer package having improved thermal dissipation
JPS55115351A (en) * 1979-02-26 1980-09-05 Fujitsu Ltd Ic stem
JPH0727989B2 (ja) * 1985-11-22 1995-03-29 日本電気株式会社 セラミックパッケージ型半導体装置の製造方法
FR2591801B1 (fr) * 1985-12-17 1988-10-14 Inf Milit Spatiale Aeronaut Boitier d'encapsulation d'un circuit electronique
US4730232A (en) * 1986-06-25 1988-03-08 Westinghouse Electric Corp. High density microelectronic packaging module for high speed chips
JPS63136657A (ja) * 1986-11-28 1988-06-08 Toshiba Corp 両面実装電子回路ユニツト
JPS6480032A (en) * 1987-09-21 1989-03-24 Hitachi Maxell Semiconductor device and manufacture thereof
US5008734A (en) * 1989-12-20 1991-04-16 National Semiconductor Corporation Stadium-stepped package for an integrated circuit with air dielectric
CA2031865C (en) * 1989-12-20 1993-07-20 Andrew L. Wu High-density memory array packaging
US5241456A (en) * 1990-07-02 1993-08-31 General Electric Company Compact high density interconnect structure
JPH05185777A (ja) * 1992-01-08 1993-07-27 Ryoden Kasei Co Ltd Icカード
JP2801810B2 (ja) * 1992-04-14 1998-09-21 株式会社東芝 樹脂封止型半導体装置

Also Published As

Publication number Publication date
CA2125266C (fr) 1999-04-20
EP0629000B1 (de) 1999-12-08
US5818108A (en) 1998-10-06
DE69421964D1 (de) 2000-01-13
FR2706222A1 (fr) 1994-12-16
CA2125266A1 (fr) 1994-12-09
FR2706222B1 (fr) 1995-07-13
EP0629000A1 (de) 1994-12-14

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Legal Events

Date Code Title Description
8332 No legal effect for de
8370 Indication related to discontinuation of the patent is to be deleted
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee