DE69419186T2 - Verfahren zur Ätzung eines halbleitenden Substrats - Google Patents
Verfahren zur Ätzung eines halbleitenden SubstratsInfo
- Publication number
- DE69419186T2 DE69419186T2 DE69419186T DE69419186T DE69419186T2 DE 69419186 T2 DE69419186 T2 DE 69419186T2 DE 69419186 T DE69419186 T DE 69419186T DE 69419186 T DE69419186 T DE 69419186T DE 69419186 T2 DE69419186 T2 DE 69419186T2
- Authority
- DE
- Germany
- Prior art keywords
- etching
- etching mask
- semiconductor substrate
- film
- mask
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000005530 etching Methods 0.000 title claims description 146
- 239000000758 substrate Substances 0.000 title claims description 60
- 238000000034 method Methods 0.000 title claims description 36
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 64
- 239000000377 silicon dioxide Substances 0.000 claims description 32
- 235000012239 silicon dioxide Nutrition 0.000 claims description 32
- 239000004065 semiconductor Substances 0.000 claims description 27
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 18
- 238000000059 patterning Methods 0.000 claims description 16
- 239000000463 material Substances 0.000 claims description 12
- 239000007769 metal material Substances 0.000 claims description 9
- 230000003647 oxidation Effects 0.000 claims description 5
- 238000007254 oxidation reaction Methods 0.000 claims description 5
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 4
- 239000000126 substance Substances 0.000 claims description 4
- 239000003989 dielectric material Substances 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 238000000151 deposition Methods 0.000 claims 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims 1
- 229920002120 photoresistant polymer Polymers 0.000 description 32
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 27
- 229910052710 silicon Inorganic materials 0.000 description 27
- 239000010703 silicon Substances 0.000 description 27
- 229910052681 coesite Inorganic materials 0.000 description 23
- 229910052906 cristobalite Inorganic materials 0.000 description 23
- 229910052682 stishovite Inorganic materials 0.000 description 23
- 229910052905 tridymite Inorganic materials 0.000 description 23
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- DKNPRRRKHAEUMW-UHFFFAOYSA-N Iodine aqueous Chemical compound [K+].I[I-]I DKNPRRRKHAEUMW-UHFFFAOYSA-N 0.000 description 4
- 238000007796 conventional method Methods 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 238000007740 vapor deposition Methods 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- 238000006073 displacement reaction Methods 0.000 description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 3
- 238000004528 spin coating Methods 0.000 description 3
- YCIMNLLNPGFGHC-UHFFFAOYSA-N catechol Chemical compound OC1=CC=CC=C1O YCIMNLLNPGFGHC-UHFFFAOYSA-N 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000013043 chemical agent Substances 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/942—Masking
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Weting (AREA)
- Micromachines (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP00116193A JP3205103B2 (ja) | 1993-01-07 | 1993-01-07 | 半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE69419186D1 DE69419186D1 (de) | 1999-07-29 |
| DE69419186T2 true DE69419186T2 (de) | 1999-10-21 |
Family
ID=11493716
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE69419186T Expired - Lifetime DE69419186T2 (de) | 1993-01-07 | 1994-01-05 | Verfahren zur Ätzung eines halbleitenden Substrats |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US5478438A (ja) |
| EP (1) | EP0607808B1 (ja) |
| JP (1) | JP3205103B2 (ja) |
| DE (1) | DE69419186T2 (ja) |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5651855A (en) * | 1992-07-28 | 1997-07-29 | Micron Technology, Inc. | Method of making self aligned contacts to silicon substrates during the manufacture of integrated circuits |
| US6248429B1 (en) | 1998-07-06 | 2001-06-19 | Micron Technology, Inc. | Metallized recess in a substrate |
| US6479395B1 (en) * | 1999-11-02 | 2002-11-12 | Alien Technology Corporation | Methods for forming openings in a substrate and apparatuses with these openings and methods for creating assemblies with openings |
| US6623579B1 (en) | 1999-11-02 | 2003-09-23 | Alien Technology Corporation | Methods and apparatus for fluidic self assembly |
| US6810057B1 (en) | 1999-11-25 | 2004-10-26 | Matsushita Electric Industrial Co., Ltd. | Semiconductor device and optical pickup device |
| US6885786B2 (en) * | 2001-02-07 | 2005-04-26 | Shipley Company, L.L.C. | Combined wet and dry etching process for micromachining of crystalline materials |
| US6907150B2 (en) * | 2001-02-07 | 2005-06-14 | Shipley Company, L.L.C. | Etching process for micromachining crystalline materials and devices fabricated thereby |
| US20030021572A1 (en) * | 2001-02-07 | 2003-01-30 | Steinberg Dan A. | V-groove with tapered depth and method for making |
| US6964804B2 (en) * | 2001-02-14 | 2005-11-15 | Shipley Company, L.L.C. | Micromachined structures made by combined wet and dry etching |
| US20020195417A1 (en) * | 2001-04-20 | 2002-12-26 | Steinberg Dan A. | Wet and dry etching process on <110> silicon and resulting structures |
| CN1545732A (zh) * | 2001-07-19 | 2004-11-10 | 希普雷公司 | 用于显微机械加工晶体材料的蚀刻工艺和由此制造的装置 |
| GB0128617D0 (en) * | 2001-11-29 | 2002-01-23 | Denselight Semiconductors Pte | Self-aligned v-groove and deep trench etching of semiconductors |
| DE10203998A1 (de) * | 2002-02-01 | 2003-08-21 | Infineon Technologies Ag | Verfahren zum Herstellen einer zackenförmigen Struktur, Verfahren zum Herstellen eines Transistors, Verfahren zum Herstellen eines Floating Gate-Transistors, Transistor, Floating Gate-Transistor und Speicher-Anordnung |
| JP4732711B2 (ja) | 2003-05-23 | 2011-07-27 | アイピー・キューブ・パートナーズ・カンパニー・リミテッド | 結晶性材料をマイクロマシニングするためのエッチング方法、およびこれによって製造されたデバイス |
| JP5226488B2 (ja) | 2008-12-05 | 2013-07-03 | 浜松ホトニクス株式会社 | 光素子モジュールの製造方法 |
| CN104425240B (zh) * | 2013-09-05 | 2018-05-08 | 北京北方华创微电子装备有限公司 | 基片刻蚀方法 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57100733A (en) * | 1980-12-15 | 1982-06-23 | Fujitsu Ltd | Etching method for semiconductor substrate |
| US4863560A (en) * | 1988-08-22 | 1989-09-05 | Xerox Corp | Fabrication of silicon structures by single side, multiple step etching process |
| DE58909602D1 (de) * | 1989-09-22 | 1996-03-21 | Siemens Ag | Verfahren zum anisotropen Ätzen von Silizium |
| CH682528A5 (fr) * | 1990-03-16 | 1993-09-30 | Westonbridge Int Ltd | Procédé de réalisation par attaque chimique d'au moins une cavité dans un substrat et substrat obtenu par ce procédé. |
| US5277755A (en) * | 1991-12-09 | 1994-01-11 | Xerox Corporation | Fabrication of three dimensional silicon devices by single side, two-step etching process |
-
1993
- 1993-01-07 JP JP00116193A patent/JP3205103B2/ja not_active Expired - Lifetime
- 1993-12-30 US US08/175,629 patent/US5478438A/en not_active Expired - Lifetime
-
1994
- 1994-01-05 DE DE69419186T patent/DE69419186T2/de not_active Expired - Lifetime
- 1994-01-05 EP EP94100132A patent/EP0607808B1/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH06204208A (ja) | 1994-07-22 |
| EP0607808A3 (en) | 1997-04-09 |
| US5478438A (en) | 1995-12-26 |
| EP0607808B1 (en) | 1999-06-23 |
| DE69419186D1 (de) | 1999-07-29 |
| JP3205103B2 (ja) | 2001-09-04 |
| EP0607808A2 (en) | 1994-07-27 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8364 | No opposition during term of opposition | ||
| 8327 | Change in the person/name/address of the patent owner |
Owner name: MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD., KADOMA, |
|
| 8327 | Change in the person/name/address of the patent owner |
Owner name: PANASONIC CORP., KADOMA, OSAKA, JP |