DE69418109D1 - Aus einem Bipolartransistor und einem Feldeffekt-Transistor bestehende integrierte Anordnung - Google Patents

Aus einem Bipolartransistor und einem Feldeffekt-Transistor bestehende integrierte Anordnung

Info

Publication number
DE69418109D1
DE69418109D1 DE69418109T DE69418109T DE69418109D1 DE 69418109 D1 DE69418109 D1 DE 69418109D1 DE 69418109 T DE69418109 T DE 69418109T DE 69418109 T DE69418109 T DE 69418109T DE 69418109 D1 DE69418109 D1 DE 69418109D1
Authority
DE
Germany
Prior art keywords
field effect
arrangement consisting
transistor
integrated arrangement
effect transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69418109T
Other languages
English (en)
Other versions
DE69418109T2 (de
Inventor
Jacques Journeau
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Koninklijke Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninklijke Philips Electronics NV filed Critical Koninklijke Philips Electronics NV
Publication of DE69418109D1 publication Critical patent/DE69418109D1/de
Application granted granted Critical
Publication of DE69418109T2 publication Critical patent/DE69418109T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/7302—Bipolar junction transistors structurally associated with other devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0705—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
    • H01L27/0711—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with bipolar transistors and diodes, or capacitors, or resistors
    • H01L27/0716—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with bipolar transistors and diodes, or capacitors, or resistors in combination with vertical bipolar transistors and diodes, or capacitors, or resistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Bipolar Transistors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
DE69418109T 1993-07-22 1994-07-14 Aus einem Bipolartransistor und einem Feldeffekt-Transistor bestehende integrierte Anordnung Expired - Fee Related DE69418109T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9309053A FR2708144A1 (fr) 1993-07-22 1993-07-22 Dispositif intégré associant un transistor bipolaire à un transistor à effet de champ.

Publications (2)

Publication Number Publication Date
DE69418109D1 true DE69418109D1 (de) 1999-06-02
DE69418109T2 DE69418109T2 (de) 1999-10-28

Family

ID=9449529

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69418109T Expired - Fee Related DE69418109T2 (de) 1993-07-22 1994-07-14 Aus einem Bipolartransistor und einem Feldeffekt-Transistor bestehende integrierte Anordnung

Country Status (5)

Country Link
US (1) US5488241A (de)
EP (1) EP0635887B1 (de)
JP (1) JP2830744B2 (de)
DE (1) DE69418109T2 (de)
FR (1) FR2708144A1 (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5554865A (en) * 1995-06-07 1996-09-10 Hughes Aircraft Company Integrated transmit/receive switch/low noise amplifier with dissimilar semiconductor devices
US5945699A (en) * 1997-05-13 1999-08-31 Harris Corporation Reduce width, differentially doped vertical JFET device
KR19990006170A (ko) * 1997-06-30 1999-01-25 김영환 수평 바이폴라형 전계 효과 트랜지스터 및 그 제조 방법
JP3709668B2 (ja) * 1997-09-02 2005-10-26 ソニー株式会社 半導体装置とその製造方法
KR100682059B1 (ko) * 2005-02-24 2007-02-15 삼성전자주식회사 초 저전력 과전압 보호회로
US9653455B1 (en) * 2015-11-10 2017-05-16 Analog Devices Global FET—bipolar transistor combination
CN113823678A (zh) * 2021-09-03 2021-12-21 无锡市晶源微电子有限公司 一种高压npn器件

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1053442A (de) * 1964-05-18
NL186665C (nl) * 1980-03-10 1992-01-16 Philips Nv Halfgeleiderinrichting.
DE3029553A1 (de) * 1980-08-04 1982-03-11 Siemens AG, 1000 Berlin und 8000 München Transistoranordnung mit hoher kollektor-emitter-durchbruchsspannung
US4485392A (en) * 1981-12-28 1984-11-27 North American Philips Corporation Lateral junction field effect transistor device
DE3215652A1 (de) * 1982-04-27 1983-10-27 Siemens AG, 1000 Berlin und 8000 München Integrierbarer bipolarer transistor
US4729008A (en) * 1982-12-08 1988-03-01 Harris Corporation High voltage IC bipolar transistors operable to BVCBO and method of fabrication
JPS6020555A (ja) * 1983-07-15 1985-02-01 Hitachi Ltd 半導体装置
JPS62119972A (ja) * 1985-11-19 1987-06-01 Fujitsu Ltd 接合型トランジスタ
JPH0732120B2 (ja) * 1986-06-09 1995-04-10 日本テキサス・インスツルメンツ株式会社 半導体装置
US4808547A (en) * 1986-07-07 1989-02-28 Harris Corporation Method of fabrication of high voltage IC bopolar transistors operable to BVCBO
NL8702671A (nl) * 1987-11-09 1989-06-01 Philips Nv Laterale hoogspanningstransistor.
JPH0449672A (ja) * 1990-06-18 1992-02-19 Seiko Instr Inc Ｄｍｏｓトランジスター

Also Published As

Publication number Publication date
JP2830744B2 (ja) 1998-12-02
JPH0758228A (ja) 1995-03-03
DE69418109T2 (de) 1999-10-28
EP0635887A1 (de) 1995-01-25
US5488241A (en) 1996-01-30
FR2708144A1 (fr) 1995-01-27
EP0635887B1 (de) 1999-04-28

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Legal Events

Date Code Title Description
8320 Willingness to grant licences declared (paragraph 23)
8339 Ceased/non-payment of the annual fee