DE69417189T2 - Kaskadierte Hochspannungsnetzwerkschaltung - Google Patents
Kaskadierte HochspannungsnetzwerkschaltungInfo
- Publication number
- DE69417189T2 DE69417189T2 DE69417189T DE69417189T DE69417189T2 DE 69417189 T2 DE69417189 T2 DE 69417189T2 DE 69417189 T DE69417189 T DE 69417189T DE 69417189 T DE69417189 T DE 69417189T DE 69417189 T2 DE69417189 T2 DE 69417189T2
- Authority
- DE
- Germany
- Prior art keywords
- high voltage
- voltage network
- network circuit
- cascaded high
- cascaded
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
- H01L23/4824—Pads with extended contours, e.g. grid structure, branch structure, finger structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
- H01L29/405—Resistive arrangements, e.g. resistive or semi-insulating field plates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7816—Lateral DMOS transistors, i.e. LDMOS transistors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/10—Modifications for increasing the maximum permissible switched voltage
- H03K17/102—Modifications for increasing the maximum permissible switched voltage in field-effect transistor switches
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/170,848 US5382826A (en) | 1993-12-21 | 1993-12-21 | Stacked high voltage transistor unit |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69417189D1 DE69417189D1 (de) | 1999-04-22 |
DE69417189T2 true DE69417189T2 (de) | 1999-07-08 |
Family
ID=22621514
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69417189T Expired - Fee Related DE69417189T2 (de) | 1993-12-21 | 1994-12-20 | Kaskadierte Hochspannungsnetzwerkschaltung |
Country Status (4)
Country | Link |
---|---|
US (1) | US5382826A (de) |
EP (1) | EP0660415B1 (de) |
JP (1) | JPH07202004A (de) |
DE (1) | DE69417189T2 (de) |
Families Citing this family (53)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05283702A (ja) * | 1992-04-03 | 1993-10-29 | Hitachi Ltd | 複合制御型半導体装置及びそれを使用した電力変換装置 |
US5486718A (en) * | 1994-07-05 | 1996-01-23 | Motorola, Inc. | High voltage planar edge termination structure and method of making same |
US5600149A (en) * | 1995-10-30 | 1997-02-04 | Xerox Corporation | Power supply regulator |
US5936874A (en) * | 1997-06-19 | 1999-08-10 | Micron Technology, Inc. | High density semiconductor memory and method of making |
EP0944113B1 (de) | 1998-02-24 | 2005-11-09 | STMicroelectronics S.r.l. | Schutzstruktur für integrierte elektronische Hochspannungsanordnungen |
US5918137A (en) * | 1998-04-27 | 1999-06-29 | Spectrian, Inc. | MOS transistor with shield coplanar with gate electrode |
US6680515B1 (en) * | 2000-11-10 | 2004-01-20 | Monolithic Power Systems, Inc. | Lateral high voltage transistor having spiral field plate and graded concentration doping |
US20040201078A1 (en) * | 2003-04-11 | 2004-10-14 | Liping Ren | Field plate structure for high voltage devices |
SE0302810D0 (sv) * | 2003-10-24 | 2003-10-24 | Infineon Technologies Ag | Monolithically integrated circuit comprising a thin film resistor, and fabrication method thereof |
JP5395137B2 (ja) * | 2004-02-24 | 2014-01-22 | セイコーインスツル株式会社 | 高電圧動作電界効果トランジスタとそのバイアス回路およびその高電圧動作回路要素 |
DE102004019345B4 (de) * | 2004-04-21 | 2007-02-08 | Austriamicrosystems Ag | Ausgangsstufenanordnung |
US20050274985A1 (en) * | 2004-05-26 | 2005-12-15 | Adlerstein Michael G | RF decoupled field plate for FETs |
DE102004039620B4 (de) * | 2004-08-06 | 2006-10-12 | Atmel Germany Gmbh | Integrierte Schaltung, die eine vorgegebene Spannungsfestigkeit besitzt |
US7183626B2 (en) * | 2004-11-17 | 2007-02-27 | International Rectifier Corporation | Passivation structure with voltage equalizing loops |
CN101405871A (zh) * | 2004-11-24 | 2009-04-08 | 美高森美公司 | 用于宽禁带功率器件的结终端结构 |
US7955943B2 (en) * | 2005-01-25 | 2011-06-07 | Semiconductor Components Industries, Llc | High voltage sensor device and method therefor |
US7709292B2 (en) * | 2006-09-29 | 2010-05-04 | Sadwick Laurence P | Processes and packaging for high voltage integrated circuits, electronic devices, and circuits |
US7782644B2 (en) * | 2007-03-03 | 2010-08-24 | Sadwick Laurence P | Method and apparatus for supplying power |
US8009452B1 (en) * | 2007-03-03 | 2011-08-30 | Sadwick Laurence P | Multiple driver power supply |
US7709908B2 (en) * | 2007-08-10 | 2010-05-04 | United Microelectronics Corp. | High-voltage MOS transistor device |
US8289054B2 (en) * | 2009-08-26 | 2012-10-16 | Alfred E. Mann Foundation For Scientific Research | High voltage differential pair and op amp in low voltage process |
US8339189B2 (en) * | 2009-08-26 | 2012-12-25 | Alfred E. Mann Foundation For Scientific Research | High voltage current source and voltage expander in low voltage process |
US8461903B1 (en) * | 2009-09-11 | 2013-06-11 | Rf Micro Devices, Inc. | SOI switch enhancement |
US20110062554A1 (en) * | 2009-09-17 | 2011-03-17 | Hsing Michael R | High voltage floating well in a silicon die |
US8598637B2 (en) * | 2009-09-18 | 2013-12-03 | Monolithic Power Systems, Inc. | High voltage junction field effect transistor with spiral field plate |
TWI503956B (zh) * | 2009-09-30 | 2015-10-11 | Semiconductor Components Ind | 高電壓感測器設備及其方法 |
US8587073B2 (en) | 2010-10-15 | 2013-11-19 | Taiwan Semiconductor Manufacturing Company, Ltd. | High voltage resistor |
US8786050B2 (en) | 2011-05-04 | 2014-07-22 | Taiwan Semiconductor Manufacturing Company, Ltd. | High voltage resistor with biased-well |
US8664741B2 (en) | 2011-06-14 | 2014-03-04 | Taiwan Semiconductor Manufacturing Company Ltd. | High voltage resistor with pin diode isolation |
US9373619B2 (en) | 2011-08-01 | 2016-06-21 | Taiwan Semiconductor Manufacturing Company, Ltd. | High voltage resistor with high voltage junction termination |
US20130161740A1 (en) * | 2011-12-21 | 2013-06-27 | Donald R. Disney | Lateral High-Voltage Transistor with Buried Resurf Layer and Associated Method for Manufacturing the Same |
US8766357B2 (en) | 2012-03-01 | 2014-07-01 | Taiwan Semiconductor Manufacturing Company, Ltd. | Apparatus and method for high voltage MOS transistor |
US8975950B2 (en) | 2012-07-07 | 2015-03-10 | Skyworks Solutions, Inc. | Switching device having a discharge circuit for improved intermodulation distortion performance |
US10147724B2 (en) | 2012-07-07 | 2018-12-04 | Skyworks Solutions, Inc. | Feed-forward circuit to improve intermodulation distortion performance of radio-frequency switch |
US9160328B2 (en) | 2012-07-07 | 2015-10-13 | Skyworks Solutions, Inc. | Circuits, devices, methods and applications related to silicon-on-insulator based radio-frequency switches |
US9276570B2 (en) | 2012-07-07 | 2016-03-01 | Skyworks Solutions, Inc. | Radio-frequency switch having gate node voltage compensation network |
US9059702B2 (en) | 2012-07-07 | 2015-06-16 | Skyworks Solutions, Inc. | Switch linearization by non-linear compensation of a field-effect transistor |
US9148194B2 (en) | 2012-07-07 | 2015-09-29 | Skyworks Solutions, Inc. | Radio-frequency switch system having improved intermodulation distortion performance |
US9628075B2 (en) | 2012-07-07 | 2017-04-18 | Skyworks Solutions, Inc. | Radio-frequency switch having dynamic body coupling |
JP2014017962A (ja) * | 2012-07-09 | 2014-01-30 | Denso Corp | 起動回路付半導体装置 |
CN103579313A (zh) * | 2012-08-10 | 2014-02-12 | 上海华虹Nec电子有限公司 | 提高高压ldmos器件击穿电压的结构 |
JP2014063771A (ja) * | 2012-09-19 | 2014-04-10 | Toshiba Corp | 半導体装置 |
US9013225B2 (en) | 2013-02-04 | 2015-04-21 | Skyworks Solutions, Inc. | RF switches having increased voltage swing uniformity |
US8786397B1 (en) * | 2013-02-07 | 2014-07-22 | Excelliance Mos Corporation | Electric field resistor |
CN103219898B (zh) * | 2013-04-02 | 2016-06-01 | 苏州博创集成电路设计有限公司 | 具有电流采样和启动结构的半导体装置 |
US9948281B2 (en) | 2016-09-02 | 2018-04-17 | Peregrine Semiconductor Corporation | Positive logic digitally tunable capacitor |
US10608623B2 (en) | 2016-12-21 | 2020-03-31 | Qorvo US. Inc. | Transistor-based radio frequency (RF) switch |
US10320379B2 (en) | 2016-12-21 | 2019-06-11 | Qorvo Us, Inc. | Transistor-based radio frequency (RF) switch |
DE102017130213B4 (de) * | 2017-12-15 | 2021-10-21 | Infineon Technologies Ag | Planarer feldeffekttransistor |
US10886911B2 (en) | 2018-03-28 | 2021-01-05 | Psemi Corporation | Stacked FET switch bias ladders |
US10236872B1 (en) * | 2018-03-28 | 2019-03-19 | Psemi Corporation | AC coupling modules for bias ladders |
US10505530B2 (en) | 2018-03-28 | 2019-12-10 | Psemi Corporation | Positive logic switch with selectable DC blocking circuit |
US11476849B2 (en) | 2020-01-06 | 2022-10-18 | Psemi Corporation | High power positive logic switch |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
BE785747A (fr) * | 1971-07-02 | 1973-01-02 | Philips Nv | Dispositif semiconducteur |
US4333225A (en) * | 1978-12-18 | 1982-06-08 | Xerox Corporation | Method of making a circular high voltage field effect transistor |
US4288806A (en) * | 1979-05-29 | 1981-09-08 | Xerox Corporation | High voltage MOSFET with overlapping electrode structure |
-
1993
- 1993-12-21 US US08/170,848 patent/US5382826A/en not_active Expired - Lifetime
-
1994
- 1994-12-19 JP JP6315340A patent/JPH07202004A/ja active Pending
- 1994-12-20 DE DE69417189T patent/DE69417189T2/de not_active Expired - Fee Related
- 1994-12-20 EP EP94120205A patent/EP0660415B1/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
DE69417189D1 (de) | 1999-04-22 |
EP0660415B1 (de) | 1999-03-17 |
US5382826A (en) | 1995-01-17 |
EP0660415A1 (de) | 1995-06-28 |
JPH07202004A (ja) | 1995-08-04 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8339 | Ceased/non-payment of the annual fee |