DE69416610D1 - Integrierter, differentieller, die Abschwächung durch Hochspannungstransistoren nutzender Hochspannungssensor - Google Patents
Integrierter, differentieller, die Abschwächung durch Hochspannungstransistoren nutzender HochspannungssensorInfo
- Publication number
- DE69416610D1 DE69416610D1 DE69416610T DE69416610T DE69416610D1 DE 69416610 D1 DE69416610 D1 DE 69416610D1 DE 69416610 T DE69416610 T DE 69416610T DE 69416610 T DE69416610 T DE 69416610T DE 69416610 D1 DE69416610 D1 DE 69416610D1
- Authority
- DE
- Germany
- Prior art keywords
- voltage
- attenuation
- differential
- integrated
- voltage sensor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
- G01R19/10—Measuring sum, difference or ratio
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
- G01R19/165—Indicating that current or voltage is either above or below a predetermined value or within or outside a predetermined range of values
- G01R19/16504—Indicating that current or voltage is either above or below a predetermined value or within or outside a predetermined range of values characterised by the components employed
- G01R19/16519—Indicating that current or voltage is either above or below a predetermined value or within or outside a predetermined range of values characterised by the components employed using FET's
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Amplifiers (AREA)
- Measurement Of Current Or Voltage (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/051,141 US5424663A (en) | 1993-04-22 | 1993-04-22 | Integrated high voltage differential sensor using the inverse gain of high voltage transistors |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69416610D1 true DE69416610D1 (de) | 1999-04-01 |
DE69416610T2 DE69416610T2 (de) | 1999-09-16 |
Family
ID=21969594
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69416610T Expired - Fee Related DE69416610T2 (de) | 1993-04-22 | 1994-04-14 | Integrierter, differentieller, die Abschwächung durch Hochspannungstransistoren nutzender Hochspannungssensor |
Country Status (6)
Country | Link |
---|---|
US (1) | US5424663A (de) |
EP (1) | EP0621638B1 (de) |
JP (1) | JPH06314934A (de) |
KR (1) | KR100332843B1 (de) |
DE (1) | DE69416610T2 (de) |
TW (1) | TW247940B (de) |
Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5583442A (en) * | 1994-02-03 | 1996-12-10 | Harris Corporation | Differential voltage monitor using a bridge circuit with resistors on and off of an integrated circuit |
JP3332115B2 (ja) * | 1994-04-08 | 2002-10-07 | 株式会社東芝 | 多入力トランジスタおよび多入力トランスコンダクタ回路 |
US5838192A (en) * | 1996-01-17 | 1998-11-17 | Analog Devices, Inc. | Junction field effect voltage reference |
ES2156269T3 (es) * | 1996-09-17 | 2001-06-16 | St Microelectronics Srl | Un circuito para diagnosticar el estado de una carga electrica. |
SE518159C2 (sv) * | 1997-01-17 | 2002-09-03 | Ericsson Telefon Ab L M | Anordning för att bestämma storleken på en ström |
JP3628576B2 (ja) * | 1999-02-14 | 2005-03-16 | 矢崎総業株式会社 | 微少電流検出装置 |
US6468847B1 (en) * | 2000-11-27 | 2002-10-22 | Power Integrations, Inc. | Method of fabricating a high-voltage transistor |
US6509220B2 (en) * | 2000-11-27 | 2003-01-21 | Power Integrations, Inc. | Method of fabricating a high-voltage transistor |
US6914425B2 (en) * | 2003-04-29 | 2005-07-05 | Teradyne, Inc. | Measurement circuit with improved accuracy |
US7592841B2 (en) * | 2006-05-11 | 2009-09-22 | Dsm Solutions, Inc. | Circuit configurations having four terminal JFET devices |
US7292083B1 (en) * | 2006-04-18 | 2007-11-06 | Etron Technology, Inc. | Comparator circuit with Schmitt trigger hysteresis character |
US7646233B2 (en) * | 2006-05-11 | 2010-01-12 | Dsm Solutions, Inc. | Level shifting circuit having junction field effect transistors |
US7852123B1 (en) * | 2006-07-07 | 2010-12-14 | Marvell International Ltd. | Reset-free comparator with built-in reference |
US20080024188A1 (en) * | 2006-07-28 | 2008-01-31 | Chou Richard K | Junction field effect transistor level shifting circuit |
US7525163B2 (en) * | 2006-10-31 | 2009-04-28 | Dsm Solutions, Inc. | Semiconductor device, design method and structure |
US8552698B2 (en) * | 2007-03-02 | 2013-10-08 | International Rectifier Corporation | High voltage shunt-regulator circuit with voltage-dependent resistor |
CN103048591A (zh) * | 2013-01-11 | 2013-04-17 | 南京航空航天大学 | 电网环境监测电路 |
CN107769766B (zh) * | 2016-08-17 | 2023-05-16 | 恩智浦美国有限公司 | 差分接收器 |
CN108072786A (zh) * | 2016-11-15 | 2018-05-25 | 北京同方微电子有限公司 | 一种低电压检测电路 |
US11125782B2 (en) | 2018-12-07 | 2021-09-21 | Abb Schweiz Ag | Line post sensor |
TWI813070B (zh) * | 2021-11-16 | 2023-08-21 | 瑞昱半導體股份有限公司 | 電源供應電路以及電源供應方法 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4262221A (en) * | 1979-03-09 | 1981-04-14 | Rca Corporation | Voltage comparator |
DE2918981A1 (de) * | 1979-05-11 | 1980-11-20 | Philips Patentverwaltung | Schaltungsanordnung fuer einen getakteten spannungsvergleicher |
NL182684C (nl) * | 1979-11-23 | 1988-04-18 | Philips Nv | Regelbare vermenigvuldigschakeling bevattende eerste en tweede transistoren in lange staartschakeling met gekoppelde emitterelektroden. |
JPS56153416A (en) * | 1980-04-30 | 1981-11-27 | Nec Corp | High accuracy constant current power source |
NL190885C (nl) * | 1983-03-31 | 1994-10-03 | Philips Nv | Verzwakkerschakeling. |
GB2159286B (en) * | 1984-05-23 | 1988-01-13 | Stc Plc | Voltage difference detector |
JPS6197577A (ja) * | 1984-10-18 | 1986-05-16 | Matsushita Electronics Corp | 電流比較回路 |
JPH0740050B2 (ja) * | 1987-05-20 | 1995-05-01 | 松下電器産業株式会社 | 電圧検知回路 |
IT1235685B (it) * | 1989-03-13 | 1992-09-21 | Sgs Thomson Microelectronics | Circuito integrato per la generazione di una tensione indipendente dalla temperatura e con compressione di dinamica funzione del valore di una resistenza variabile esterna al circuito integrato. |
US5047358A (en) * | 1989-03-17 | 1991-09-10 | Delco Electronics Corporation | Process for forming high and low voltage CMOS transistors on a single integrated circuit chip |
IT1236627B (it) * | 1989-10-24 | 1993-03-25 | St Microelectronics Srl | Circuito di limitazione della tensione di uscita di un dispositivo monolitico di potenza a semiconduttore che pilota un carico risonante collegato ad un'alimentazione |
US5113092A (en) * | 1990-08-31 | 1992-05-12 | Motorola, Inc. | Differential voltage comparator |
FR2670902B1 (fr) * | 1990-12-21 | 1993-04-23 | Siemens Automotive Sa | Dispositif de detection et de discrimination de defauts d'un circuit d'alimentation electrique d'une charge. |
US5220207A (en) * | 1991-09-03 | 1993-06-15 | Allegro Microsystems, Inc. | Load current monitor for MOS driver |
-
1993
- 1993-04-22 US US08/051,141 patent/US5424663A/en not_active Expired - Fee Related
-
1994
- 1994-03-09 TW TW083102053A patent/TW247940B/zh active
- 1994-04-14 EP EP94201024A patent/EP0621638B1/de not_active Expired - Lifetime
- 1994-04-14 DE DE69416610T patent/DE69416610T2/de not_active Expired - Fee Related
- 1994-04-21 JP JP6082973A patent/JPH06314934A/ja active Pending
- 1994-04-22 KR KR1019940008502A patent/KR100332843B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
JPH06314934A (ja) | 1994-11-08 |
KR100332843B1 (ko) | 2002-11-13 |
DE69416610T2 (de) | 1999-09-16 |
TW247940B (de) | 1995-05-21 |
EP0621638B1 (de) | 1999-02-24 |
US5424663A (en) | 1995-06-13 |
EP0621638A1 (de) | 1994-10-26 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE69416610D1 (de) | Integrierter, differentieller, die Abschwächung durch Hochspannungstransistoren nutzender Hochspannungssensor | |
DE69206032D1 (de) | Fahrzeug-Motorhaube. | |
FR2695787B1 (fr) | Transducteur capacitif intégré. | |
DE69408605D1 (de) | SOI-Transistor | |
ITTO910640A0 (it) | Dispositivo di sterzatura. | |
TR28103A (tr) | Sondaj darbeli-acma cihazi. | |
DE69108891D1 (de) | Schuberzeuger. | |
FR2694357B1 (fr) | Différentiel. | |
DE59202089D1 (de) | Klärbecken. | |
DE69109238D1 (de) | Feldeffekttransistor. | |
DE69114628D1 (de) | Rücklauftransistor. | |
DE69102844D1 (de) | Rinnen gestaltende Vorrichtung. | |
DE69201708D1 (de) | Feldeffekttransistor. | |
DE59201835D1 (de) | Schutzvorrichtung für Rahmen. | |
EP0600437A3 (en) | Gate defined transistor. | |
DE69615536D1 (de) | Mos transistor | |
ITTO941089A0 (it) | Struttura di tenuta. | |
DE69300896D1 (de) | Ziele. | |
FR2712371B1 (fr) | Raccord souple. | |
NL1000216C2 (nl) | Portaal. | |
EP0613191A3 (de) | Feldeffekttransistor-Kanalstruktur. | |
ES1020431Y (es) | Valvula de compuerta mejorada. | |
ITRM950083V0 (it) | Ferma finestre per apertura graduata. | |
ES1031709Y (es) | Prenda interior. | |
FR2691838B1 (fr) | Transistor MOS de synapse. |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |