FR2691838B1 - Transistor MOS de synapse. - Google Patents

Transistor MOS de synapse.

Info

Publication number
FR2691838B1
FR2691838B1 FR9306413A FR9306413A FR2691838B1 FR 2691838 B1 FR2691838 B1 FR 2691838B1 FR 9306413 A FR9306413 A FR 9306413A FR 9306413 A FR9306413 A FR 9306413A FR 2691838 B1 FR2691838 B1 FR 2691838B1
Authority
FR
France
Prior art keywords
mos transistor
synapse
synapse mos
transistor
mos
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR9306413A
Other languages
English (en)
Other versions
FR2691838A1 (fr
Inventor
Chung Ho-Sun
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SK Hynix Inc
Original Assignee
Goldstar Electron Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Goldstar Electron Co Ltd filed Critical Goldstar Electron Co Ltd
Priority to FR9306413A priority Critical patent/FR2691838B1/fr
Publication of FR2691838A1 publication Critical patent/FR2691838A1/fr
Application granted granted Critical
Publication of FR2691838B1 publication Critical patent/FR2691838B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312Gate electrodes for field effect devices
    • H01L29/42316Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42372Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
    • H01L29/4238Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out characterised by the surface lay-out
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06NCOMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
    • G06N3/00Computing arrangements based on biological models
    • G06N3/02Neural networks
    • G06N3/06Physical realisation, i.e. hardware implementation of neural networks, neurons or parts of neurons
    • G06N3/063Physical realisation, i.e. hardware implementation of neural networks, neurons or parts of neurons using electronic means
    • G06N3/065Analogue means
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • H01L29/7831Field effect transistors with field effect produced by an insulated gate with multiple gate structure

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Theoretical Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biomedical Technology (AREA)
  • Biophysics (AREA)
  • Ceramic Engineering (AREA)
  • Neurology (AREA)
  • Computational Linguistics (AREA)
  • Data Mining & Analysis (AREA)
  • Evolutionary Computation (AREA)
  • General Health & Medical Sciences (AREA)
  • Molecular Biology (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Software Systems (AREA)
  • Artificial Intelligence (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
FR9306413A 1993-05-28 1993-05-28 Transistor MOS de synapse. Expired - Fee Related FR2691838B1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR9306413A FR2691838B1 (fr) 1993-05-28 1993-05-28 Transistor MOS de synapse.

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9306413A FR2691838B1 (fr) 1993-05-28 1993-05-28 Transistor MOS de synapse.

Publications (2)

Publication Number Publication Date
FR2691838A1 FR2691838A1 (fr) 1993-12-03
FR2691838B1 true FR2691838B1 (fr) 1994-11-10

Family

ID=9447543

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9306413A Expired - Fee Related FR2691838B1 (fr) 1993-05-28 1993-05-28 Transistor MOS de synapse.

Country Status (1)

Country Link
FR (1) FR2691838B1 (fr)

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52144279A (en) * 1976-05-27 1977-12-01 Fujitsu Ltd Semiconductor device
JPH0695570B2 (ja) * 1985-02-07 1994-11-24 三菱電機株式会社 半導体集積回路装置
US5010512A (en) * 1989-01-12 1991-04-23 International Business Machines Corp. Neural network having an associative memory that learns by example
JPH02281651A (ja) * 1989-04-21 1990-11-19 Sony Corp 電子回路
US5005059A (en) * 1989-05-01 1991-04-02 Motorola, Inc. Digital-to-analog converting field effect device and circuitry
JPH03108083A (ja) * 1989-09-21 1991-05-08 Sharp Corp 神経回路装置

Also Published As

Publication number Publication date
FR2691838A1 (fr) 1993-12-03

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Legal Events

Date Code Title Description
R1 Appeal
DS Decision of the director general to state about an appeal
ST Notification of lapse

Effective date: 20080131