DE69414313T2 - Harzbeschichtungsverfahren für Halbleiterlaser- und Photodioden-Chips - Google Patents
Harzbeschichtungsverfahren für Halbleiterlaser- und Photodioden-ChipsInfo
- Publication number
- DE69414313T2 DE69414313T2 DE69414313T DE69414313T DE69414313T2 DE 69414313 T2 DE69414313 T2 DE 69414313T2 DE 69414313 T DE69414313 T DE 69414313T DE 69414313 T DE69414313 T DE 69414313T DE 69414313 T2 DE69414313 T2 DE 69414313T2
- Authority
- DE
- Germany
- Prior art keywords
- resin
- semiconductor laser
- cap
- laser device
- chips
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000011347 resin Substances 0.000 title claims description 113
- 229920005989 resin Polymers 0.000 title claims description 113
- 239000004065 semiconductor Substances 0.000 title claims description 85
- 238000000576 coating method Methods 0.000 title claims description 36
- 238000000034 method Methods 0.000 claims description 15
- 239000011248 coating agent Substances 0.000 claims description 13
- 238000007664 blowing Methods 0.000 claims description 10
- 239000007921 spray Substances 0.000 claims description 5
- 238000007599 discharging Methods 0.000 claims description 2
- 239000007789 gas Substances 0.000 description 27
- 239000000758 substrate Substances 0.000 description 8
- 230000000007 visual effect Effects 0.000 description 6
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 4
- 229910052731 fluorine Inorganic materials 0.000 description 4
- 239000011737 fluorine Substances 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 238000000465 moulding Methods 0.000 description 4
- 238000004528 spin coating Methods 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 238000010276 construction Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000002604 ultrasonography Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/02218—Material of the housings; Filling of the housings
- H01S5/02234—Resin-filled housings; the housings being made of resin
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/50—Encapsulations or containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S2301/00—Functional characteristics
- H01S2301/17—Semiconductor lasers comprising special layers
- H01S2301/176—Specific passivation layers on surfaces other than the emission facet
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/02208—Mountings; Housings characterised by the shape of the housings
- H01S5/02212—Can-type, e.g. TO-CAN housings with emission along or parallel to symmetry axis
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/023—Mount members, e.g. sub-mount members
- H01S5/02325—Mechanically integrated components on mount members or optical micro-benches
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/068—Stabilisation of laser output parameters
- H01S5/0683—Stabilisation of laser output parameters by monitoring the optical output parameters
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/852—Encapsulations
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
- Semiconductor Lasers (AREA)
- Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
- Light Receiving Elements (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16551993A JP3207016B2 (ja) | 1993-07-05 | 1993-07-05 | 半導体レーザ装置の樹脂コーティング方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE69414313D1 DE69414313D1 (de) | 1998-12-10 |
| DE69414313T2 true DE69414313T2 (de) | 1999-05-27 |
Family
ID=15813938
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE69414313T Expired - Fee Related DE69414313T2 (de) | 1993-07-05 | 1994-07-01 | Harzbeschichtungsverfahren für Halbleiterlaser- und Photodioden-Chips |
Country Status (7)
| Country | Link |
|---|---|
| EP (1) | EP0633615B1 (enExample) |
| JP (1) | JP3207016B2 (enExample) |
| KR (1) | KR0154993B1 (enExample) |
| CN (2) | CN1063581C (enExample) |
| CA (1) | CA2127299C (enExample) |
| DE (1) | DE69414313T2 (enExample) |
| TW (1) | TW259886B (enExample) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6866887B1 (en) * | 2003-10-14 | 2005-03-15 | Photon Dynamics, Inc. | Method for manufacturing PDLC-based electro-optic modulator using spin coating |
| CN101746578B (zh) * | 2009-12-23 | 2011-03-16 | 中国科学院半导体研究所 | 半导体激光器储存盒 |
| CN102194714B (zh) * | 2010-03-05 | 2013-02-27 | 铜陵三佳科技股份有限公司 | 一种带树脂上料光电检测装置的半导体封装设备 |
| CN103681983B (zh) * | 2013-06-17 | 2016-02-24 | 深圳市绎立锐光科技开发有限公司 | 一种发光元件上涂覆荧光粉层的方法及喷气装置 |
| CN119965663B (zh) * | 2025-04-10 | 2025-06-20 | 华芯半导体科技有限公司 | 一种高速vcsel半导体芯片防护封装装置及封装方法 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5914891B2 (ja) * | 1979-11-15 | 1984-04-06 | 松下電器産業株式会社 | 回転塗布方法および回転塗布装置 |
| JPS57130422A (en) * | 1981-02-06 | 1982-08-12 | Hitachi Ltd | Resist coating and developing device |
| JPS58103132A (ja) * | 1981-12-16 | 1983-06-20 | Konishiroku Photo Ind Co Ltd | スピンナ−装置 |
| JPS5966229A (ja) * | 1982-10-07 | 1984-04-14 | Matsushita Electric Ind Co Ltd | 位相ロツクル−プ回路 |
| JPH04137580A (ja) * | 1990-09-27 | 1992-05-12 | Sharp Corp | 半導体レーザ用ステム |
| JPH0596229A (ja) * | 1991-10-09 | 1993-04-20 | Fujitsu Ltd | スピン式樹脂液塗布方法 |
| TW289872B (enExample) * | 1992-12-24 | 1996-11-01 | Sharp Kk |
-
1993
- 1993-07-05 JP JP16551993A patent/JP3207016B2/ja not_active Expired - Fee Related
-
1994
- 1994-06-30 TW TW083105971A patent/TW259886B/zh active
- 1994-07-01 DE DE69414313T patent/DE69414313T2/de not_active Expired - Fee Related
- 1994-07-01 EP EP94304837A patent/EP0633615B1/en not_active Expired - Lifetime
- 1994-07-04 CA CA002127299A patent/CA2127299C/en not_active Expired - Fee Related
- 1994-07-05 KR KR1019940016260A patent/KR0154993B1/ko not_active Expired - Fee Related
- 1994-07-05 CN CN94109155A patent/CN1063581C/zh not_active Expired - Fee Related
-
1999
- 1999-11-18 CN CN99124886A patent/CN1260616A/zh active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| CN1104804A (zh) | 1995-07-05 |
| CN1063581C (zh) | 2001-03-21 |
| JP3207016B2 (ja) | 2001-09-10 |
| EP0633615B1 (en) | 1998-11-04 |
| CN1260616A (zh) | 2000-07-19 |
| KR950004666A (ko) | 1995-02-18 |
| KR0154993B1 (ko) | 1998-12-01 |
| EP0633615A1 (en) | 1995-01-11 |
| CA2127299A1 (en) | 1995-01-06 |
| JPH0722711A (ja) | 1995-01-24 |
| DE69414313D1 (de) | 1998-12-10 |
| CA2127299C (en) | 1999-01-12 |
| TW259886B (enExample) | 1995-10-11 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8364 | No opposition during term of opposition | ||
| 8339 | Ceased/non-payment of the annual fee |