CN1063581C - 用于半导体激光装置的树脂涂覆方法 - Google Patents

用于半导体激光装置的树脂涂覆方法 Download PDF

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Publication number
CN1063581C
CN1063581C CN94109155A CN94109155A CN1063581C CN 1063581 C CN1063581 C CN 1063581C CN 94109155 A CN94109155 A CN 94109155A CN 94109155 A CN94109155 A CN 94109155A CN 1063581 C CN1063581 C CN 1063581C
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CN
China
Prior art keywords
semiconductor laser
resin
laser device
cover
coating method
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Expired - Fee Related
Application number
CN94109155A
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English (en)
Chinese (zh)
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CN1104804A (zh
Inventor
市川英树
竹川浩
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Sharp Corp
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Sharp Corp
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Publication of CN1104804A publication Critical patent/CN1104804A/zh
Application granted granted Critical
Publication of CN1063581C publication Critical patent/CN1063581C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/02218—Material of the housings; Filling of the housings
    • H01S5/02234—Resin-filled housings; the housings being made of resin
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/50—Encapsulations or containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/17—Semiconductor lasers comprising special layers
    • H01S2301/176—Specific passivation layers on surfaces other than the emission facet
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/02208—Mountings; Housings characterised by the shape of the housings
    • H01S5/02212—Can-type, e.g. TO-CAN housings with emission along or parallel to symmetry axis
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/023—Mount members, e.g. sub-mount members
    • H01S5/02325—Mechanically integrated components on mount members or optical micro-benches
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068—Stabilisation of laser output parameters
    • H01S5/0683—Stabilisation of laser output parameters by monitoring the optical output parameters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Semiconductor Lasers (AREA)
  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
  • Light Receiving Elements (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
CN94109155A 1993-07-05 1994-07-05 用于半导体激光装置的树脂涂覆方法 Expired - Fee Related CN1063581C (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP16551993A JP3207016B2 (ja) 1993-07-05 1993-07-05 半導体レーザ装置の樹脂コーティング方法
JP165519/1993 1993-07-05
JP165519/93 1993-07-05

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CN99124886A Division CN1260616A (zh) 1993-07-05 1999-11-18 用于半导体激光装置的树脂涂覆方法

Publications (2)

Publication Number Publication Date
CN1104804A CN1104804A (zh) 1995-07-05
CN1063581C true CN1063581C (zh) 2001-03-21

Family

ID=15813938

Family Applications (2)

Application Number Title Priority Date Filing Date
CN94109155A Expired - Fee Related CN1063581C (zh) 1993-07-05 1994-07-05 用于半导体激光装置的树脂涂覆方法
CN99124886A Pending CN1260616A (zh) 1993-07-05 1999-11-18 用于半导体激光装置的树脂涂覆方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN99124886A Pending CN1260616A (zh) 1993-07-05 1999-11-18 用于半导体激光装置的树脂涂覆方法

Country Status (7)

Country Link
EP (1) EP0633615B1 (enExample)
JP (1) JP3207016B2 (enExample)
KR (1) KR0154993B1 (enExample)
CN (2) CN1063581C (enExample)
CA (1) CA2127299C (enExample)
DE (1) DE69414313T2 (enExample)
TW (1) TW259886B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101746578B (zh) * 2009-12-23 2011-03-16 中国科学院半导体研究所 半导体激光器储存盒

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6866887B1 (en) * 2003-10-14 2005-03-15 Photon Dynamics, Inc. Method for manufacturing PDLC-based electro-optic modulator using spin coating
CN102194714B (zh) * 2010-03-05 2013-02-27 铜陵三佳科技股份有限公司 一种带树脂上料光电检测装置的半导体封装设备
CN103681983B (zh) * 2013-06-17 2016-02-24 深圳市绎立锐光科技开发有限公司 一种发光元件上涂覆荧光粉层的方法及喷气装置
CN119965663B (zh) * 2025-04-10 2025-06-20 华芯半导体科技有限公司 一种高速vcsel半导体芯片防护封装装置及封装方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5966229A (ja) * 1982-10-07 1984-04-14 Matsushita Electric Ind Co Ltd 位相ロツクル−プ回路

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5914891B2 (ja) * 1979-11-15 1984-04-06 松下電器産業株式会社 回転塗布方法および回転塗布装置
JPS57130422A (en) * 1981-02-06 1982-08-12 Hitachi Ltd Resist coating and developing device
JPS58103132A (ja) * 1981-12-16 1983-06-20 Konishiroku Photo Ind Co Ltd スピンナ−装置
JPH04137580A (ja) * 1990-09-27 1992-05-12 Sharp Corp 半導体レーザ用ステム
JPH0596229A (ja) * 1991-10-09 1993-04-20 Fujitsu Ltd スピン式樹脂液塗布方法
TW289872B (enExample) * 1992-12-24 1996-11-01 Sharp Kk

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5966229A (ja) * 1982-10-07 1984-04-14 Matsushita Electric Ind Co Ltd 位相ロツクル−プ回路

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101746578B (zh) * 2009-12-23 2011-03-16 中国科学院半导体研究所 半导体激光器储存盒

Also Published As

Publication number Publication date
CN1104804A (zh) 1995-07-05
JP3207016B2 (ja) 2001-09-10
EP0633615B1 (en) 1998-11-04
CN1260616A (zh) 2000-07-19
KR950004666A (ko) 1995-02-18
KR0154993B1 (ko) 1998-12-01
DE69414313T2 (de) 1999-05-27
EP0633615A1 (en) 1995-01-11
CA2127299A1 (en) 1995-01-06
JPH0722711A (ja) 1995-01-24
DE69414313D1 (de) 1998-12-10
CA2127299C (en) 1999-01-12
TW259886B (enExample) 1995-10-11

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Granted publication date: 20010321