DE69405486D1 - Halbleitervorrichtung mit Gradienten-Bandabstand BeTe-ZnSe ohmschem Kontakt für einen II-VI Halbleiter - Google Patents

Halbleitervorrichtung mit Gradienten-Bandabstand BeTe-ZnSe ohmschem Kontakt für einen II-VI Halbleiter

Info

Publication number
DE69405486D1
DE69405486D1 DE69405486T DE69405486T DE69405486D1 DE 69405486 D1 DE69405486 D1 DE 69405486D1 DE 69405486 T DE69405486 T DE 69405486T DE 69405486 T DE69405486 T DE 69405486T DE 69405486 D1 DE69405486 D1 DE 69405486D1
Authority
DE
Germany
Prior art keywords
semiconductor
bete
ohmic contact
semiconductor device
bandgap
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69405486T
Other languages
English (en)
Other versions
DE69405486T2 (de
Inventor
Piotr Mensz
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Electronics NV filed Critical Philips Electronics NV
Application granted granted Critical
Publication of DE69405486D1 publication Critical patent/DE69405486D1/de
Publication of DE69405486T2 publication Critical patent/DE69405486T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/327—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIBVI compounds, e.g. ZnCdSe-laser
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/82—Heterojunctions
    • H10D62/826—Heterojunctions comprising only Group II-VI materials heterojunctions, e.g. CdTe/HgTe heterojunctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/347—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIBVI compounds, e.g. ZnCdSe- laser

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
DE69405486T 1993-07-02 1994-06-29 Halbleitervorrichtung mit Gradienten-Bandabstand BeTe-ZnSe ohmschem Kontakt für einen II-VI Halbleiter Expired - Fee Related DE69405486T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/087,307 US5422902A (en) 1993-07-02 1993-07-02 BeTe-ZnSe graded band gap ohmic contact to p-type ZnSe semiconductors

Publications (2)

Publication Number Publication Date
DE69405486D1 true DE69405486D1 (de) 1997-10-16
DE69405486T2 DE69405486T2 (de) 1998-03-19

Family

ID=22204390

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69405486T Expired - Fee Related DE69405486T2 (de) 1993-07-02 1994-06-29 Halbleitervorrichtung mit Gradienten-Bandabstand BeTe-ZnSe ohmschem Kontakt für einen II-VI Halbleiter

Country Status (4)

Country Link
US (1) US5422902A (de)
EP (1) EP0632504B1 (de)
JP (1) JPH0758417A (de)
DE (1) DE69405486T2 (de)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1994015369A1 (en) * 1992-12-22 1994-07-07 Research Corporation Technologies, Inc. Group ii-vi compound semiconductor light emitting devices and an ohmic contact therefor
JP3461611B2 (ja) * 1995-03-24 2003-10-27 正紀 村上 Ｉｉ−ｖｉ族化合物半導体装置及びその製造方法
DE19542241C2 (de) 1995-11-13 2003-01-09 Siemens Ag Optoelektronisches Bauelement in II-VI-Halbleitermaterial
US5818859A (en) * 1996-06-27 1998-10-06 Minnesota Mining And Manufacturing Company Be-containing II-VI blue-green laser diodes
US5841802A (en) * 1996-08-30 1998-11-24 Mcdonnell Douglas Corporation Multiple, isolated strained quantum well semiconductor laser
US6090637A (en) 1997-02-13 2000-07-18 3M Innovative Properties Company Fabrication of II-VI semiconductor device with BeTe buffer layer
US5767534A (en) * 1997-02-24 1998-06-16 Minnesota Mining And Manufacturing Company Passivation capping layer for ohmic contact in II-VI semiconductor light transducing device
DE19729186A1 (de) 1997-07-08 1999-01-14 Siemens Ag Verfahren zum Herstellen eines II-VI-Halbleiter-Bauelements
DE19729396A1 (de) * 1997-07-09 1999-01-14 Siemens Ag Elektrischer Kontakt für ein II-VI-Halbleiterbauelement und Verfahren zum Herstellen des elektrischen Kontaktes
US5963573A (en) * 1997-08-25 1999-10-05 3M Innovative Properties Company Light absorbing layer for II-VI semiconductor light emitting devices
US6087725A (en) * 1997-09-29 2000-07-11 Matsushita Electric Industrial Co., Ltd. Low barrier ohmic contact for semiconductor light emitting device
US6373188B1 (en) * 1998-12-22 2002-04-16 Honeywell International Inc. Efficient solid-state light emitting device with excited phosphors for producing a visible light output
DE10024924A1 (de) * 2000-05-19 2001-11-29 Osram Opto Semiconductors Gmbh Licht emittierendes Halbleiterbauelement
TW200501456A (en) * 2003-04-23 2005-01-01 Hoya Corp Light-emitting diode

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3933538A (en) * 1972-01-18 1976-01-20 Sumitomo Electric Industries, Ltd. Method and apparatus for production of liquid phase epitaxial layers of semiconductors
US4801984A (en) * 1980-06-12 1989-01-31 International Business Machines Corporation Semiconductor ohmic contact
US5140385A (en) * 1987-03-27 1992-08-18 Misawa Co., Ltd. Light emitting element and method of manufacture
US5068204A (en) * 1987-03-27 1991-11-26 Misawa Co. Ltd. Method of manufacturing a light emitting element
JPH02229484A (ja) * 1988-06-08 1990-09-12 Furukawa Electric Co Ltd:The 半導体素子
JP2708183B2 (ja) * 1988-07-21 1998-02-04 シャープ株式会社 化合物半導体発光素子
JPH0268968A (ja) * 1988-09-02 1990-03-08 Sharp Corp 化合物半導体発光素子
US5060233A (en) * 1989-01-13 1991-10-22 International Business Machines Corporation Miniature blue-green laser source using second-harmonic generation
JPH0717477B2 (ja) * 1989-03-15 1995-03-01 シャープ株式会社 化合物半導体のエピタキシャル成長方法
JP2559492B2 (ja) * 1989-07-05 1996-12-04 シャープ株式会社 化合物半導体発光素子の製造方法
JP2588280B2 (ja) * 1989-07-10 1997-03-05 シャープ株式会社 化合物半導体発光素子
US4949348A (en) * 1989-08-25 1990-08-14 The United States Of America As Represented By The Department Of Energy Blue-green upconversion laser
JP2653901B2 (ja) * 1990-07-02 1997-09-17 シャープ株式会社 化合物半導体発光素子
US5248631A (en) * 1990-08-24 1993-09-28 Minnesota Mining And Manufacturing Company Doping of iib-via semiconductors during molecular beam epitaxy using neutral free radicals
GB2250862B (en) * 1990-11-26 1994-10-19 Sharp Kk Electroluminescent device of compound semiconductor
JP2685377B2 (ja) * 1990-11-26 1997-12-03 シャープ株式会社 化合物半導体発光素子
US5213998A (en) * 1991-05-15 1993-05-25 Minnesota Mining And Manufacturing Company Method for making an ohmic contact for p-type group II-VI compound semiconductors
EP0584236B1 (de) * 1991-05-15 1997-07-16 Minnesota Mining And Manufacturing Company Blau-gruen diodenlaser
US5162891A (en) * 1991-07-03 1992-11-10 International Business Machines Corporation Group III-V heterostructure devices having self-aligned graded contact diffusion regions and method for fabricating same

Also Published As

Publication number Publication date
EP0632504B1 (de) 1997-09-10
US5422902A (en) 1995-06-06
JPH0758417A (ja) 1995-03-03
EP0632504A2 (de) 1995-01-04
DE69405486T2 (de) 1998-03-19
EP0632504A3 (de) 1995-11-15

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: KONINKLIJKE PHILIPS ELECTRONICS N.V., EINDHOVEN, N

8339 Ceased/non-payment of the annual fee