DE69401210T2 - Kollimator mit integrierter Reaktivgasverteilung für Kathodenzerstäubungsanlage - Google Patents
Kollimator mit integrierter Reaktivgasverteilung für KathodenzerstäubungsanlageInfo
- Publication number
- DE69401210T2 DE69401210T2 DE69401210T DE69401210T DE69401210T2 DE 69401210 T2 DE69401210 T2 DE 69401210T2 DE 69401210 T DE69401210 T DE 69401210T DE 69401210 T DE69401210 T DE 69401210T DE 69401210 T2 DE69401210 T2 DE 69401210T2
- Authority
- DE
- Germany
- Prior art keywords
- substrate
- target
- gas
- collimator
- chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004544 sputter deposition Methods 0.000 title claims description 37
- 239000000758 substrate Substances 0.000 claims description 80
- 239000007789 gas Substances 0.000 claims description 71
- 239000000463 material Substances 0.000 claims description 32
- 238000000034 method Methods 0.000 claims description 24
- 238000000576 coating method Methods 0.000 claims description 19
- 239000011248 coating agent Substances 0.000 claims description 15
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 11
- 239000004744 fabric Substances 0.000 claims description 11
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 10
- 239000010936 titanium Substances 0.000 claims description 10
- 229910052719 titanium Inorganic materials 0.000 claims description 10
- 150000002500 ions Chemical class 0.000 claims description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 7
- 239000004065 semiconductor Substances 0.000 claims description 7
- 229910001873 dinitrogen Inorganic materials 0.000 claims description 3
- 238000007599 discharging Methods 0.000 claims description 2
- 229910052757 nitrogen Inorganic materials 0.000 claims description 2
- 238000013022 venting Methods 0.000 claims 4
- 238000005477 sputtering target Methods 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 18
- 239000002245 particle Substances 0.000 description 12
- 239000011261 inert gas Substances 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 2
- 239000006227 byproduct Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- -1 argon ions Chemical class 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/046—Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
- C23C14/0036—Reactive sputtering
- C23C14/0068—Reactive sputtering characterised by means for confinement of gases or sputtered material, e.g. screens, baffles
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US08/060,315 US5346601A (en) | 1993-05-11 | 1993-05-11 | Sputter coating collimator with integral reactive gas distribution |
| PCT/US1994/005248 WO1994026949A1 (en) | 1993-05-11 | 1994-05-11 | Sputter coating collimator with integral reactive gas distribution |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE69401210D1 DE69401210D1 (de) | 1997-01-30 |
| DE69401210T2 true DE69401210T2 (de) | 1997-04-10 |
Family
ID=22028722
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE69401210T Expired - Fee Related DE69401210T2 (de) | 1993-05-11 | 1994-05-11 | Kollimator mit integrierter Reaktivgasverteilung für Kathodenzerstäubungsanlage |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US5346601A (https=) |
| EP (1) | EP0698128B1 (https=) |
| JP (1) | JPH08510296A (https=) |
| AU (1) | AU6831494A (https=) |
| CA (1) | CA2156716A1 (https=) |
| DE (1) | DE69401210T2 (https=) |
| TW (1) | TW243536B (https=) |
| WO (1) | WO1994026949A1 (https=) |
Families Citing this family (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5928771A (en) * | 1995-05-12 | 1999-07-27 | Diamond Black Technologies, Inc. | Disordered coating with cubic boron nitride dispersed therein |
| US5591313A (en) * | 1995-06-30 | 1997-01-07 | Tabco Technologies, Inc. | Apparatus and method for localized ion sputtering |
| EP0766304A2 (en) * | 1995-09-29 | 1997-04-02 | AT&T Corp. | Method for coating heterogeneous substrates with homogeneous layers |
| US5985102A (en) * | 1996-01-29 | 1999-11-16 | Micron Technology, Inc. | Kit for electrically isolating collimator of PVD chamber, chamber so modified, and method of using |
| US5705042A (en) * | 1996-01-29 | 1998-01-06 | Micron Technology, Inc. | Electrically isolated collimator and method |
| US6287436B1 (en) | 1998-02-27 | 2001-09-11 | Innovent, Inc. | Brazed honeycomb collimator |
| KR100340174B1 (ko) * | 1999-04-06 | 2002-06-12 | 이동준 | 전기화학적 바이오센서 테스트 스트립, 그 제조방법 및 전기화학적 바이오센서 |
| US6352626B1 (en) | 1999-04-19 | 2002-03-05 | Von Zweck Heimart | Sputter ion source for boron and other targets |
| US20070261951A1 (en) * | 2006-04-06 | 2007-11-15 | Yan Ye | Reactive sputtering zinc oxide transparent conductive oxides onto large area substrates |
| US20070235320A1 (en) | 2006-04-06 | 2007-10-11 | Applied Materials, Inc. | Reactive sputtering chamber with gas distribution tubes |
| US7674662B2 (en) * | 2006-07-19 | 2010-03-09 | Applied Materials, Inc. | Process for making thin film field effect transistors using zinc oxide |
| US7927713B2 (en) * | 2007-04-27 | 2011-04-19 | Applied Materials, Inc. | Thin film semiconductor material produced through reactive sputtering of zinc target using nitrogen gases |
| EP2183780A4 (en) | 2007-08-02 | 2010-07-28 | Applied Materials Inc | THIN FILM TRANSISTORS WITH THIN FILM SEMICONDUCTOR MATERIALS |
| US8980066B2 (en) * | 2008-03-14 | 2015-03-17 | Applied Materials, Inc. | Thin film metal oxynitride semiconductors |
| WO2009117438A2 (en) * | 2008-03-20 | 2009-09-24 | Applied Materials, Inc. | Process to make metal oxide thin film transistor array with etch stopping layer |
| US7879698B2 (en) * | 2008-03-24 | 2011-02-01 | Applied Materials, Inc. | Integrated process system and process sequence for production of thin film transistor arrays using doped or compounded metal oxide semiconductor |
| US8258511B2 (en) | 2008-07-02 | 2012-09-04 | Applied Materials, Inc. | Thin film transistors using multiple active channel layers |
| CN102640294B (zh) * | 2009-09-24 | 2014-12-17 | 应用材料公司 | 将湿式处理用于源极-漏极金属蚀刻从而制造金属氧化物或金属氮氧化物tft的方法 |
| US8840763B2 (en) * | 2009-09-28 | 2014-09-23 | Applied Materials, Inc. | Methods for stable process in a reactive sputtering process using zinc or doped zinc target |
| US11851751B2 (en) * | 2021-07-23 | 2023-12-26 | Taiwan Semiconductor Manufacturing Co., Ltd. | Deposition system and method |
Family Cites Families (27)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3595773A (en) * | 1965-12-17 | 1971-07-27 | Euratom | Process for depositing on surfaces |
| US4297162A (en) * | 1979-10-17 | 1981-10-27 | Texas Instruments Incorporated | Plasma etching using improved electrode |
| US4364995A (en) * | 1981-02-04 | 1982-12-21 | Minnesota Mining And Manufacturing Company | Metal/metal oxide coatings |
| FR2538987A1 (fr) * | 1983-01-05 | 1984-07-06 | Commissariat Energie Atomique | Enceinte pour le traitement et notamment la gravure de substrats par la methode du plasma reactif |
| DE3331707A1 (de) * | 1983-09-02 | 1985-03-21 | Leybold-Heraeus GmbH, 5000 Köln | Verfahren und vorrichtung zum reaktiven aufstaeuben von verbindungen von metallen und halbleitern |
| JPS6074626A (ja) * | 1983-09-30 | 1985-04-26 | Fujitsu Ltd | ウエハー処理方法及び装置 |
| US4534816A (en) * | 1984-06-22 | 1985-08-13 | International Business Machines Corporation | Single wafer plasma etch reactor |
| JPS6175514A (ja) * | 1984-09-21 | 1986-04-17 | Hitachi Ltd | 処理装置 |
| US4793975A (en) * | 1985-05-20 | 1988-12-27 | Tegal Corporation | Plasma Reactor with removable insert |
| JPS627855A (ja) * | 1985-07-05 | 1987-01-14 | Hitachi Ltd | スパツタリング装置 |
| JPH0812856B2 (ja) * | 1986-01-17 | 1996-02-07 | 株式会社日立製作所 | プラズマ処理方法および装置 |
| GB8622820D0 (en) * | 1986-09-23 | 1986-10-29 | Nordiko Ltd | Electrode assembly & apparatus |
| US4780169A (en) * | 1987-05-11 | 1988-10-25 | Tegal Corporation | Non-uniform gas inlet for dry etching apparatus |
| JPH0660391B2 (ja) * | 1987-06-11 | 1994-08-10 | 日電アネルバ株式会社 | スパッタリング装置 |
| US4846928A (en) * | 1987-08-04 | 1989-07-11 | Texas Instruments, Incorporated | Process and apparatus for detecting aberrations in production process operations |
| JPH0741153Y2 (ja) * | 1987-10-26 | 1995-09-20 | 東京応化工業株式会社 | 試料処理用電極 |
| JPH01302726A (ja) * | 1988-02-10 | 1989-12-06 | Japan Synthetic Rubber Co Ltd | 反応性イオンエッチング装置 |
| US4931158A (en) * | 1988-03-22 | 1990-06-05 | The Regents Of The Univ. Of Calif. | Deposition of films onto large area substrates using modified reactive magnetron sputtering |
| EP0350752B1 (de) * | 1988-07-15 | 1993-10-13 | Balzers Aktiengesellschaft | Haltevorrichtung für eine Scheibe sowie Anwendung derselben |
| JPH02151865A (ja) * | 1988-11-22 | 1990-06-11 | Ucb Sa | 高温反応処理方法 |
| DE3914065A1 (de) * | 1989-04-28 | 1990-10-31 | Leybold Ag | Vorrichtung zur durchfuehrung von plasma-aetzverfahren |
| DE3926877A1 (de) * | 1989-08-16 | 1991-02-21 | Leybold Ag | Verfahren zum beschichten eines dielektrischen substrats mit kupfer |
| US5108569A (en) * | 1989-11-30 | 1992-04-28 | Applied Materials, Inc. | Process and apparatus for forming stoichiometric layer of a metal compound by closed loop voltage controlled reactive sputtering |
| JPH0465823A (ja) * | 1990-07-06 | 1992-03-02 | Oki Electric Ind Co Ltd | 半導体素子の製造方法および製造装置 |
| DE4106770C2 (de) * | 1991-03-04 | 1996-10-17 | Leybold Ag | Verrichtung zum reaktiven Beschichten eines Substrats |
| CA2061119C (en) * | 1991-04-19 | 1998-02-03 | Pei-Ing P. Lee | Method of depositing conductors in high aspect ratio apertures |
| US5223108A (en) * | 1991-12-30 | 1993-06-29 | Materials Research Corporation | Extended lifetime collimator |
-
1993
- 1993-05-11 US US08/060,315 patent/US5346601A/en not_active Expired - Fee Related
-
1994
- 1994-05-11 JP JP6525681A patent/JPH08510296A/ja active Pending
- 1994-05-11 AU AU68314/94A patent/AU6831494A/en not_active Abandoned
- 1994-05-11 DE DE69401210T patent/DE69401210T2/de not_active Expired - Fee Related
- 1994-05-11 EP EP94916738A patent/EP0698128B1/en not_active Expired - Lifetime
- 1994-05-11 CA CA002156716A patent/CA2156716A1/en not_active Abandoned
- 1994-05-11 WO PCT/US1994/005248 patent/WO1994026949A1/en not_active Ceased
- 1994-06-11 TW TW083105336A patent/TW243536B/zh active
Also Published As
| Publication number | Publication date |
|---|---|
| TW243536B (https=) | 1995-03-21 |
| CA2156716A1 (en) | 1994-11-24 |
| EP0698128B1 (en) | 1996-12-18 |
| WO1994026949A1 (en) | 1994-11-24 |
| JPH08510296A (ja) | 1996-10-29 |
| DE69401210D1 (de) | 1997-01-30 |
| AU6831494A (en) | 1994-12-12 |
| EP0698128A1 (en) | 1996-02-28 |
| US5346601A (en) | 1994-09-13 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8364 | No opposition during term of opposition | ||
| 8327 | Change in the person/name/address of the patent owner |
Owner name: TOKYO ELECTRON LTD., TOKIO/TOKYO, JP |
|
| 8339 | Ceased/non-payment of the annual fee |