DE69334049D1 - Verfahren zur Entfernung eines Polymers, mit Selektivität gegenüber Metall - Google Patents

Verfahren zur Entfernung eines Polymers, mit Selektivität gegenüber Metall

Info

Publication number
DE69334049D1
DE69334049D1 DE69334049T DE69334049T DE69334049D1 DE 69334049 D1 DE69334049 D1 DE 69334049D1 DE 69334049 T DE69334049 T DE 69334049T DE 69334049 T DE69334049 T DE 69334049T DE 69334049 D1 DE69334049 D1 DE 69334049D1
Authority
DE
Germany
Prior art keywords
selectivity
polymer
metal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69334049T
Other languages
English (en)
Other versions
DE69334049T2 (de
Inventor
Daniel J Syverson
Brynne K Bohannon
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Inc
Tel Manufacturing and Engineering of America Inc
Original Assignee
FSI International Inc
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by FSI International Inc, Texas Instruments Inc filed Critical FSI International Inc
Application granted granted Critical
Publication of DE69334049D1 publication Critical patent/DE69334049D1/de
Publication of DE69334049T2 publication Critical patent/DE69334049T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
    • H01L21/02071—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a delineation, e.g. RIE, of conductive layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31127—Etching organic layers
    • H01L21/31133—Etching organic layers by chemical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32139—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer using masks

Landscapes

  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Drying Of Semiconductors (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
DE69334049T 1992-09-03 1993-09-03 Verfahren zur Entfernung eines Polymers, mit Selektivität gegenüber Metall Expired - Fee Related DE69334049T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US940101 1992-09-03
US07/940,101 US5348619A (en) 1992-09-03 1992-09-03 Metal selective polymer removal

Publications (2)

Publication Number Publication Date
DE69334049D1 true DE69334049D1 (de) 2006-09-07
DE69334049T2 DE69334049T2 (de) 2007-02-15

Family

ID=25474228

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69334049T Expired - Fee Related DE69334049T2 (de) 1992-09-03 1993-09-03 Verfahren zur Entfernung eines Polymers, mit Selektivität gegenüber Metall

Country Status (6)

Country Link
US (2) US5348619A (de)
EP (1) EP0585936B1 (de)
JP (1) JPH077002A (de)
KR (1) KR100270416B1 (de)
DE (1) DE69334049T2 (de)
TW (1) TW241387B (de)

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US6849153B2 (en) 1998-04-16 2005-02-01 Siemens Aktiengesellschaft Removal of post-rie polymer on A1/CU metal line
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US6271808B1 (en) 1998-06-05 2001-08-07 Silicon Light Machines Stereo head mounted display using a single display device
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US6101036A (en) 1998-06-23 2000-08-08 Silicon Light Machines Embossed diffraction grating alone and in combination with changeable image display
US6130770A (en) 1998-06-23 2000-10-10 Silicon Light Machines Electron gun activated grating light valve
US6215579B1 (en) 1998-06-24 2001-04-10 Silicon Light Machines Method and apparatus for modulating an incident light beam for forming a two-dimensional image
US6303986B1 (en) 1998-07-29 2001-10-16 Silicon Light Machines Method of and apparatus for sealing an hermetic lid to a semiconductor die
US6117796A (en) * 1998-08-13 2000-09-12 International Business Machines Corporation Removal of silicon oxide
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US6174817B1 (en) * 1998-08-26 2001-01-16 Texas Instruments Incorporated Two step oxide removal for memory cells
JP3330554B2 (ja) * 1999-01-27 2002-09-30 松下電器産業株式会社 エッチング方法
US6740247B1 (en) 1999-02-05 2004-05-25 Massachusetts Institute Of Technology HF vapor phase wafer cleaning and oxide etching
US6399509B1 (en) 2000-09-18 2002-06-04 Promos Technologies, Inc. Defects reduction for a metal etcher
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US6782205B2 (en) 2001-06-25 2004-08-24 Silicon Light Machines Method and apparatus for dynamic equalization in wavelength division multiplexing
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US7066284B2 (en) 2001-11-14 2006-06-27 Halliburton Energy Services, Inc. Method and apparatus for a monodiameter wellbore, monodiameter casing, monobore, and/or monowell
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US6822797B1 (en) 2002-05-31 2004-11-23 Silicon Light Machines, Inc. Light modulator structure for producing high-contrast operation using zero-order light
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US6714337B1 (en) 2002-06-28 2004-03-30 Silicon Light Machines Method and device for modulating a light beam and having an improved gamma response
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US6801354B1 (en) 2002-08-20 2004-10-05 Silicon Light Machines, Inc. 2-D diffraction grating for substantially eliminating polarization dependent losses
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Also Published As

Publication number Publication date
EP0585936A2 (de) 1994-03-09
USRE36006E (en) 1998-12-22
DE69334049T2 (de) 2007-02-15
US5348619A (en) 1994-09-20
KR100270416B1 (ko) 2000-12-01
EP0585936B1 (de) 2006-07-26
KR940008000A (ko) 1994-04-28
EP0585936A3 (de) 1995-03-29
TW241387B (de) 1995-02-21
JPH077002A (ja) 1995-01-10

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee