DE69328253D1 - Spannungsregler zum Programmieren nichtflüchtiger und elektrisch programmierbarer Speicherzellen - Google Patents

Spannungsregler zum Programmieren nichtflüchtiger und elektrisch programmierbarer Speicherzellen

Info

Publication number
DE69328253D1
DE69328253D1 DE69328253T DE69328253T DE69328253D1 DE 69328253 D1 DE69328253 D1 DE 69328253D1 DE 69328253 T DE69328253 T DE 69328253T DE 69328253 T DE69328253 T DE 69328253T DE 69328253 D1 DE69328253 D1 DE 69328253D1
Authority
DE
Germany
Prior art keywords
volatile
memory cells
voltage regulator
programmable memory
electrically programmable
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69328253T
Other languages
English (en)
Other versions
DE69328253T2 (de
Inventor
Marco Maccarrone
Marco Olivo
Carla Golla
Silvia Padoan
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SRL
Original Assignee
STMicroelectronics SRL
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SRL filed Critical STMicroelectronics SRL
Application granted granted Critical
Publication of DE69328253D1 publication Critical patent/DE69328253D1/de
Publication of DE69328253T2 publication Critical patent/DE69328253T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/30—Power supply circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/147—Voltage reference generators, voltage or current regulators; Internally lowered supply levels; Compensation for voltage drops

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Read Only Memory (AREA)
DE69328253T 1993-12-31 1993-12-31 Spannungsregler zum Programmieren nichtflüchtiger und elektrisch programmierbarer Speicherzellen Expired - Fee Related DE69328253T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP93830545A EP0661717B1 (de) 1993-12-31 1993-12-31 Spannungsregler zum Programmieren nichtflüchtiger und elektrisch programmierbarer Speicherzellen

Publications (2)

Publication Number Publication Date
DE69328253D1 true DE69328253D1 (de) 2000-05-04
DE69328253T2 DE69328253T2 (de) 2000-09-14

Family

ID=8215302

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69328253T Expired - Fee Related DE69328253T2 (de) 1993-12-31 1993-12-31 Spannungsregler zum Programmieren nichtflüchtiger und elektrisch programmierbarer Speicherzellen

Country Status (4)

Country Link
US (1) US5519656A (de)
EP (1) EP0661717B1 (de)
JP (1) JP2839849B2 (de)
DE (1) DE69328253T2 (de)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5701090A (en) * 1994-11-15 1997-12-23 Mitsubishi Denki Kabushiki Kaisha Data output circuit with reduced output noise
US5631598A (en) * 1995-06-07 1997-05-20 Analog Devices, Inc. Frequency compensation for a low drop-out regulator
DE69514791T2 (de) * 1995-07-24 2000-07-20 Stmicroelectronics S.R.L., Agrate Brianza Flash-EEPROM mit onchip-Löschung-Source-Spannungsgenerator
EP0800176B1 (de) * 1996-04-05 2003-07-02 STMicroelectronics S.r.l. Spannungsregler zum Programmieren nichtflüchtiger Speicherzellen
JP3709246B2 (ja) * 1996-08-27 2005-10-26 株式会社日立製作所 半導体集積回路
US5889721A (en) * 1997-08-21 1999-03-30 Integrated Silicon Solution, Inc. Method and apparatus for operating functions relating to memory and/or applications that employ memory in accordance with available power
DE69723697D1 (de) * 1997-09-30 2003-08-28 St Microelectronics Srl Spannungsregler mit Spannungsabfallkompensation für Programmierschaltung von nichtflüchtigen und elektrisch programmierbaren Speicherzellen
IT1296486B1 (it) * 1997-11-21 1999-06-25 Ses Thomson Microelectronics S Regolatore di tensione per circuiti di memoria a singola tensione di alimentazione, in particolare per memorie di tipo flash.
US5874830A (en) * 1997-12-10 1999-02-23 Micron Technology, Inc. Adaptively baised voltage regulator and operating method
JP2001067886A (ja) * 1999-08-26 2001-03-16 Nec Ic Microcomput Syst Ltd 半導体記憶装置
KR100368314B1 (ko) * 1999-12-27 2003-01-24 주식회사 하이닉스반도체 플래시 메모리의 바이어스 회로
EP1176603A1 (de) * 2000-07-26 2002-01-30 STMicroelectronics S.r.l. Nichtflüchtiger Speicher mit einer Ladungspumpe mit einer geregelten Spannung
US7019583B2 (en) * 2001-01-29 2006-03-28 Axiohm Transaction Solutions, Inc. Current inrush limiting circuit
US6998689B2 (en) * 2002-09-09 2006-02-14 General Nanotechnology Llc Fluid delivery for scanning probe microscopy
FR2856856B1 (fr) * 2003-06-24 2005-08-26 Atmel Corp Circuit basse tension a fin d'interfacage avec des signaux analogiques a haute tension
US20050259497A1 (en) * 2004-05-14 2005-11-24 Zmos Technology, Inc. Internal voltage generator scheme and power management method
KR100560822B1 (ko) 2004-09-02 2006-03-13 삼성전자주식회사 리플-프리 내부 전압을 발생하는 반도체 장치
ITMI20042241A1 (it) * 2004-11-19 2005-02-19 St Microelectronics Srl Metodo di configurazione di un regolatore di tensione
US7099204B1 (en) * 2005-03-23 2006-08-29 Spansion Llc Current sensing circuit with a current-compensated drain voltage regulation
US7200066B2 (en) * 2005-07-18 2007-04-03 Dialog Semiconductor Manufacturing Ltd. Accurate power supply system for flash-memory including on-chip supply voltage regulator, reference voltage generation, power-on reset, and supply voltage monitor
US8148962B2 (en) 2009-05-12 2012-04-03 Sandisk Il Ltd. Transient load voltage regulator
US9123414B2 (en) 2013-11-22 2015-09-01 Micron Technology, Inc. Memory systems and memory programming methods
US9336875B2 (en) 2013-12-16 2016-05-10 Micron Technology, Inc. Memory systems and memory programming methods

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62146497A (ja) * 1985-12-20 1987-06-30 Nec Corp Ｕｖ−ｅｐｒｏｍの書き込み回路
US4804865A (en) * 1987-03-19 1989-02-14 Harris Corporation Fast voltage reference stabilization circuit
US5006974A (en) * 1987-12-24 1991-04-09 Waferscale Integration Inc. On-chip high voltage generator and regulator in an integrated circuit
US4858187A (en) * 1988-02-01 1989-08-15 Texas Instruments Incorporated Programming implementation circuit
CH681928A5 (de) * 1989-04-26 1993-06-15 Seiko Epson Corp
EP0397408A1 (de) * 1989-05-09 1990-11-14 Advanced Micro Devices, Inc. Referenzspannungsgenerator
JP3124781B2 (ja) * 1990-03-30 2001-01-15 富士通株式会社 半導体集積回路装置
JP3247402B2 (ja) * 1991-07-25 2002-01-15 株式会社東芝 半導体装置及び不揮発性半導体記憶装置
FR2682802B1 (fr) * 1991-10-18 1993-12-03 Sgs Thomson Microelectronics Sa Dispositif pour generer une tension de programmation d'une memoire permanente programmable, notamment de type eprom, procede et memoire s'y rapportant.
US5593874A (en) * 1992-03-19 1997-01-14 Monsanto Company Enhanced expression in plants
US5291446A (en) * 1992-10-22 1994-03-01 Advanced Micro Devices, Inc. VPP power supply having a regulator circuit for controlling a regulated positive potential

Also Published As

Publication number Publication date
US5519656A (en) 1996-05-21
EP0661717A1 (de) 1995-07-05
JPH07235194A (ja) 1995-09-05
DE69328253T2 (de) 2000-09-14
EP0661717B1 (de) 2000-03-29
JP2839849B2 (ja) 1998-12-16

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee