DE69323818D1 - Vorrichtung zur Erzeugung einer MOS temperaturkompensierten Referenzspannung für niedrige Spannungen und grosse Betriebsspannungsbereiche - Google Patents
Vorrichtung zur Erzeugung einer MOS temperaturkompensierten Referenzspannung für niedrige Spannungen und grosse BetriebsspannungsbereicheInfo
- Publication number
- DE69323818D1 DE69323818D1 DE69323818T DE69323818T DE69323818D1 DE 69323818 D1 DE69323818 D1 DE 69323818D1 DE 69323818 T DE69323818 T DE 69323818T DE 69323818 T DE69323818 T DE 69323818T DE 69323818 D1 DE69323818 D1 DE 69323818D1
- Authority
- DE
- Germany
- Prior art keywords
- generating
- low voltages
- large operating
- compensated reference
- reference voltage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
- G05F3/02—Regulating voltage or current
- G05F3/08—Regulating voltage or current wherein the variable is dc
- G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
- G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
- G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
- G05F3/24—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
- G05F3/242—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage
- G05F3/245—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage producing a voltage or current as a predetermined function of the temperature
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
- G05F3/02—Regulating voltage or current
- G05F3/08—Regulating voltage or current wherein the variable is dc
- G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
- G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
- G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
- G05F3/24—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
- G05F3/242—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage
- G05F3/247—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage producing a voltage or current as a predetermined function of the supply voltage
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S323/00—Electricity: power supply or regulation systems
- Y10S323/907—Temperature compensation of semiconductor
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Radar, Positioning & Navigation (AREA)
- Automation & Control Theory (AREA)
- Control Of Electrical Variables (AREA)
- Logic Circuits (AREA)
- Control Of Amplification And Gain Control (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US07/940,084 US5315230A (en) | 1992-09-03 | 1992-09-03 | Temperature compensated voltage reference for low and wide voltage ranges |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69323818D1 true DE69323818D1 (de) | 1999-04-15 |
DE69323818T2 DE69323818T2 (de) | 1999-10-28 |
Family
ID=25474202
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69323818T Expired - Fee Related DE69323818T2 (de) | 1992-09-03 | 1993-08-20 | Vorrichtung zur Erzeugung einer MOS temperaturkompensierten Referenzspannung für niedrige Spannungen und grosse Betriebsspannungsbereiche |
Country Status (4)
Country | Link |
---|---|
US (1) | US5315230A (de) |
EP (1) | EP0585755B1 (de) |
JP (1) | JP2788843B2 (de) |
DE (1) | DE69323818T2 (de) |
Families Citing this family (32)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2799535B2 (ja) * | 1992-10-16 | 1998-09-17 | 三菱電機株式会社 | 基準電流発生回路 |
US5345195A (en) * | 1992-10-22 | 1994-09-06 | United Memories, Inc. | Low power Vcc and temperature independent oscillator |
US5614815A (en) * | 1994-03-10 | 1997-03-25 | Fujitsu Limited | Constant voltage supplying circuit |
US5892249A (en) * | 1996-02-23 | 1999-04-06 | National Semiconductor Corporation | Integrated circuit having reprogramming cell |
US5877616A (en) * | 1996-09-11 | 1999-03-02 | Macronix International Co., Ltd. | Low voltage supply circuit for integrated circuit |
WO1998011660A1 (en) * | 1996-09-11 | 1998-03-19 | Macronix International Co., Ltd. | Low voltage supply circuit |
US5889394A (en) * | 1997-06-02 | 1999-03-30 | Motorola Inc. | Temperature independent current reference |
US5977832A (en) * | 1997-12-18 | 1999-11-02 | Philips Electronics North America Corporation | Method of biasing an MOS IC to operate at the zero temperature coefficient point |
JP3244057B2 (ja) | 1998-07-16 | 2002-01-07 | 日本電気株式会社 | 基準電圧源回路 |
JP2000155620A (ja) * | 1998-11-20 | 2000-06-06 | Mitsubishi Electric Corp | 基準電圧発生回路 |
US6612737B1 (en) * | 1999-12-29 | 2003-09-02 | Affymetrix, Inc. | System and method for self-calibrating measurement |
JP3575453B2 (ja) * | 2001-09-14 | 2004-10-13 | ソニー株式会社 | 基準電圧発生回路 |
EP1315063A1 (de) | 2001-11-14 | 2003-05-28 | Dialog Semiconductor GmbH | Schwellenspannungunabhängige Stromreferenz eines MOS Transistors |
JP2004318235A (ja) * | 2003-04-11 | 2004-11-11 | Renesas Technology Corp | 基準電圧発生回路 |
US7042205B2 (en) * | 2003-06-27 | 2006-05-09 | Macronix International Co., Ltd. | Reference voltage generator with supply voltage and temperature immunity |
US6982883B2 (en) | 2004-03-22 | 2006-01-03 | Summer Steven E | Radiation tolerant electrical component with non-radiation hardened FET |
DE102005043376B4 (de) | 2005-09-12 | 2013-08-01 | Austriamicrosystems Ag | Oszillatoranordnung und Verfahren zum Erzeugen eines periodischen Signals |
KR100738957B1 (ko) * | 2005-09-13 | 2007-07-12 | 주식회사 하이닉스반도체 | 반도체 집적회로의 내부전압 발생장치 |
US7679352B2 (en) * | 2007-05-30 | 2010-03-16 | Faraday Technology Corp. | Bandgap reference circuits |
US7990128B2 (en) * | 2008-04-25 | 2011-08-02 | Infineon Technologies Ag | Circuit and method for pulling a potential at a node towards a feed potential |
EP2256578A1 (de) * | 2009-05-15 | 2010-12-01 | STMicroelectronics (Grenoble 2) SAS | Low-dropout Spannungsregler mit niedrigem Ruhestrom |
US8669808B2 (en) * | 2009-09-14 | 2014-03-11 | Mediatek Inc. | Bias circuit and phase-locked loop circuit using the same |
US8188785B2 (en) | 2010-02-04 | 2012-05-29 | Semiconductor Components Industries, Llc | Mixed-mode circuits and methods of producing a reference current and a reference voltage |
US8878511B2 (en) * | 2010-02-04 | 2014-11-04 | Semiconductor Components Industries, Llc | Current-mode programmable reference circuits and methods therefor |
US8680840B2 (en) * | 2010-02-11 | 2014-03-25 | Semiconductor Components Industries, Llc | Circuits and methods of producing a reference current or voltage |
TW201217934A (en) * | 2010-10-29 | 2012-05-01 | Nat Univ Chung Cheng | Programmable low dropout linear regulator |
US8351291B2 (en) * | 2011-05-06 | 2013-01-08 | Freescale Semiconductor, Inc | Electrically programmable fuse module in semiconductor device |
CN102662427A (zh) * | 2012-05-25 | 2012-09-12 | 中国科学院微电子研究所 | 一种电压源电路 |
US8866536B1 (en) | 2013-11-14 | 2014-10-21 | United Microelectronics Corp. | Process monitoring circuit and method |
CN106782333B (zh) * | 2017-02-23 | 2018-12-11 | 京东方科技集团股份有限公司 | Oled像素的补偿方法和补偿装置、显示装置 |
CN109582076B (zh) * | 2019-01-09 | 2023-10-24 | 上海晟矽微电子股份有限公司 | 基准电流源 |
CN114253342A (zh) * | 2022-01-26 | 2022-03-29 | 北京信息科技大学 | 稳压电路和放大电路 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1131497A (en) * | 1965-11-04 | 1968-10-23 | Hawker Siddeley Dynamics Ltd | Improvements relating to reference voltage circuits |
US3828241A (en) * | 1971-07-30 | 1974-08-06 | Sony Corp | Regulated voltage supply circuit which compensates for temperature and input voltage variations |
FR2315811A1 (fr) * | 1975-06-27 | 1977-01-21 | Labo Cent Telecommunicat | Dipole electronique pour le bouclage d'une ligne telephonique |
US4009432A (en) * | 1975-09-04 | 1977-02-22 | Rca Corporation | Constant current supply |
JPS61103223A (ja) * | 1984-10-26 | 1986-05-21 | Mitsubishi Electric Corp | 定電圧発生回路 |
JPS62188255A (ja) * | 1986-02-13 | 1987-08-17 | Toshiba Corp | 基準電圧発生回路 |
US4686449A (en) * | 1986-04-07 | 1987-08-11 | The United States Of America As Represented By The Secretary Of The Navy | JFET current source with high power supply rejection |
JP2809768B2 (ja) * | 1989-11-30 | 1998-10-15 | 株式会社東芝 | 基準電位発生回路 |
US5121049A (en) * | 1990-03-30 | 1992-06-09 | Texas Instruments Incorporated | Voltage reference having steep temperature coefficient and method of operation |
US5117177A (en) * | 1991-01-23 | 1992-05-26 | Ramtron Corporation | Reference generator for an integrated circuit |
US5134310A (en) * | 1991-01-23 | 1992-07-28 | Ramtron Corporation | Current supply circuit for driving high capacitance load in an integrated circuit |
-
1992
- 1992-09-03 US US07/940,084 patent/US5315230A/en not_active Expired - Lifetime
-
1993
- 1993-08-20 EP EP93113334A patent/EP0585755B1/de not_active Expired - Lifetime
- 1993-08-20 DE DE69323818T patent/DE69323818T2/de not_active Expired - Fee Related
- 1993-09-03 JP JP5219832A patent/JP2788843B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US5315230A (en) | 1994-05-24 |
EP0585755B1 (de) | 1999-03-10 |
EP0585755A1 (de) | 1994-03-09 |
DE69323818T2 (de) | 1999-10-28 |
JP2788843B2 (ja) | 1998-08-20 |
JPH06204838A (ja) | 1994-07-22 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE69323818T2 (de) | Vorrichtung zur Erzeugung einer MOS temperaturkompensierten Referenzspannung für niedrige Spannungen und grosse Betriebsspannungsbereiche | |
DE69514733T2 (de) | Koronaquelle zur Erzeugung einer Koronaentladung und Behandlung von fliesfähige Abfallstoffen mit Koronaentladung | |
DE59602643D1 (de) | Anordnung zur galvanisch getrennten übertragung von hilfsenergie (gleichspannung) und informationen zu einer elektronischen einheit | |
DE3881850D1 (de) | Schaltung zur erzeugung einer zwischenspannung zwischen einer versorgungsspannung und einer erdspannung. | |
DE59402425D1 (de) | Verfahren und Vorrichtung zur Befeuchtung von Prozessgas für den Betrieb von Brennstoffzellensystemen | |
DE69325788T2 (de) | Anordnung und Verfahren zur Aufrechterhaltung einer hohen Spannung für niedrige Leistungsverwendungen | |
DE69209678D1 (de) | Halbleiteranordnung für Hochspannungsverwendung und Verfahren zur Herstellung | |
DE69316897D1 (de) | Vorrichtung zur einkapselung und passivierung von schaltkreisen für flachschirme | |
DE69300024D1 (de) | Vorrichtung zur Erzeugung von Bezugsspannungen. | |
DE69327164T2 (de) | Spannungserhöhungsschaltung zur Erzeugung von positiven und negativen erhöhten Spannungen | |
DE69312544D1 (de) | Plasmaerzeugungsverfahren und dieses Verfahren verwendende Plasmaerzeugungsvorrichtung | |
DE59208957D1 (de) | Vorrichtung zur erzeugung von schwingungen und deren anwendung | |
DE69615401D1 (de) | Verfahren und vorrichtung zur stromversorgung aus einer wechselspannungsquelle | |
DE69117857D1 (de) | Gerät und Verfahren zur Parallelgeneration von zyklischen redundanten Prüfungskoden | |
DE69232746T2 (de) | Halbleiteranordnung und Verfahren zur Erhöhung der Durchbruchspannung einer Halbleiteranordnung | |
EP0690364A3 (de) | Banddistanzreferenzspannungsgenerator mit Regelung und Schnellstartschaltung | |
DE69324417D1 (de) | Vorrichtung und Verfahren zur Koordinateneingabe und Oszillationsgenerator | |
DE59406187D1 (de) | Spannungsregler zur regelung der ausgangsspannung eines generators | |
DE69434435D1 (de) | Gleichspannungswandlerschaltung und steuereinrichtung für induktive last unter verwendung desselben wandlerschaltung | |
DE59504294D1 (de) | Vorrichtung zur Erzeugung von Ozon | |
DE69616189T2 (de) | Vorrichtung zur Erzeugung einer Corona und Kopierer mit solcher Vorrichtung | |
DE69409973T2 (de) | Spannbefestigungssystem für eine Vorrichtung zur Erzeugung von Coronaentladung | |
DE69630658D1 (de) | Ausgangsschaltung und elektronische vorrichtung damit | |
DE69330410D1 (de) | Steuerungsgerät für Wechselspannungsquelle | |
DE69511498T2 (de) | Verfahren und Vorrichtung zur Steuerung einer Anlage zur Übertragung von Hochspannungsgleichstrom |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8328 | Change in the person/name/address of the agent |
Representative=s name: FIENER, J., PAT.-ANW., 87719 MINDELHEIM |
|
8339 | Ceased/non-payment of the annual fee |