US3828241A - Regulated voltage supply circuit which compensates for temperature and input voltage variations - Google Patents

Regulated voltage supply circuit which compensates for temperature and input voltage variations Download PDF

Info

Publication number
US3828241A
US3828241A US40503973A US3828241A US 3828241 A US3828241 A US 3828241A US 40503973 A US40503973 A US 40503973A US 3828241 A US3828241 A US 3828241A
Authority
US
Grant status
Grant
Patent type
Prior art keywords
transistor
emitter
collector
voltage
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
Inventor
T Horichi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Grant date

Links

Images

Classifications

    • GPHYSICS
    • G05CONTROLLING; REGULATING
    • G05FSYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02Regulating voltage or current
    • G05F3/08Regulating voltage or current wherein the variable is dc
    • G05F3/10Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/22Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the bipolar type only
    • G05F3/222Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the bipolar type only with compensation for device parameters, e.g. Early effect, gain, manufacturing process, or external variations, e.g. temperature, loading, supply voltage
    • G05F3/227Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the bipolar type only with compensation for device parameters, e.g. Early effect, gain, manufacturing process, or external variations, e.g. temperature, loading, supply voltage producing a current or voltage as a predetermined function of the supply voltage
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S323/00Electricity: power supply or regulation systems
    • Y10S323/907Temperature compensation of semiconductor

Abstract

A regulated voltage supply circuit including first, second and third transistors of one conductivity type and a fourth transistor of the opposite conductivity type connected in a specific configuration. The emitter-collector path of the second transistor and the emitter-collector path of the third transistor are connected in series between the first and second voltage terminals of a voltage supply source. The emitter-collector path of the first transistor is connected between the first and second voltage terminals in parallel with the series connected emittercollector paths of the second and third transistors. The base and collector electrodes of the first transistor are connected to the emitter and base electrodes of the second transistor respectively and the first and second transistors form a first degenerative feedback circuit for the regulation of the supply voltage. The base electrodes of the third and fourth transistors are connected to each other and the collector and emitter electrodes of the fourth transistor are connected to the emitter electrode of the second transistor and the second voltage terminal respectively. The third and fourth transistors form a second degenerative feedback circuit for the regulation of the supply voltage and a desirably regulated or stabilized DC voltage is obtained from the collector of the second transistor.

Description

OTHER PUBLICATIONS IBM Technical Disclosure Bulletin, Vol. 14, No. 5, Oct. l97l; pg. 1495, Current Source by Platt et al.

United States Patent [191 [111 3,828,241 Horichi Aug. 6, 1974 REGULATED VOLTAGE SUPPLY CIRCUIT Primary ExaminerGerald Goldberg WHICH COMPENSATES FOR Attorney, Agent, or FirmLewis H. Eslinger, Esq; TEMPERATURE AND INPUT VOLTAGE Alvm Smderbrand, q- VARIATIONS [75] Inventor: Tetsuya Horichi, Tokyo, Japan [57] ABSTRACT A regulated voltage supply circuit including first, sec- [73] Asslgnee' Sony Corporamn T Japan ond and third transistors of one conductivity type and Filedi 09L 1973 a fourth transistor of the opposite conductivity type connected in a specific configuration. The emitter- [211 Appl' 405039 collector path of the second transistor and the emitter- Related US. Application Data collector path of the third transistor are connected in [63] Continuation-in-part f 5 333,5 9, J l 3 series between the first and second voltage terminals 1971, abandoned. of a voltage supply source. The emitter-collector path 7 r A P D t of the first transistor is connected between the first [30] Forelgn pp Ion y a a and second voltage terminals in parallel with the series Aug.7, 1972 Japan ..47-78888 Connected emitter-Collector Paths of the Second and thirdtransistors. The base and collector electrodes of I 323/22 T, 0 the first transistor are connected to the emitter and 7/ 323/8 base electrodes of the second transistor respectively [SI III. CI. and the first and econd transistors form a first degen I Fleld of Search 323/4, erative feedback circuit for the regulation of the sup- 22 T ply voltage. The base electrodes of the third and fourth transistors are connected to each other and the References Clted collector and emitter electrodes of the fourth transis- UNITED STATES PATENTS tor are connected to the emitter electrode of the sec- 3,522,52| 8/1970 Lloyd 323/22 T 0119 transistor and the Second voltage terminal p 3549'910 12/1970 Ogawa et at", 307/313 x tively. The third and fourth transistors form a second 3,612,984 10/1971 Temple et al. 323/22 T X degenerative feedback circuit for the regulation of the 3,617,859 11/1971 Dobkin et a1. 323/4 supply voltage and a desirably regulated or stabilized DC voltage is obtained from the collector of the second transistor.

8 Claims, 8 Drawing Figures I cc.

LOAD

PAIENIEB we 6 I974 SHEET 3 [IF 4 LOAD PATENTEB 51934 SHEET t 0F 4 LOAD B n 2 viii? n LOAD FIG. 8

REGULATED VOLTAGESUPPLY CIRCUIT WHICH COMPENSATES FOR TEMPERATURE AND INPUT VOLTAGE VARIATIONS This is a continuation-in-part of copending application Ser. No. 383,569 filed July 30, 1973, now abandoned.

BACKGROUND OF THE INVENTION 1. Field of the Invention I This invention relates generally to a regulated voltage supply circuit and more particularly to such a circuit utilizing three transistors of one conductivity type and another transistor of the opposite conductivity type and suitable for fabrication as an integrated circuit.

2. Description of the Prior Art Several kinds of regulated voltage supply circuits for semi-conductor amplifiers are known in the prior art. Such circuits are designed to have a specific temperature characteristic relative to the temperature characteristic of the semiconductor amplifiers connected thereto in order to compensate for or cancel the temperature characteristic of the amplifiers, and are also designed to obtain an output DC voltage which is regulated regardless of variations in an operating voltage supplied to the circuits.

However, in the conventional circuits, a sufiiciently regulated output voltage is usually not obtained and the DC potentials in the semiconductor amplifier supplied with the output voltage from such conventional circuits are apt to change in response to variations in the supplied voltages.

Such insufficiency in the regulation of the output voltage of the prior art circuits results from their circuit arrangements.

OBJECTS OF THE INVENTION Accordingly, it is an object of this invention to provide a novel regulated voltage supply circuit avoiding the above mentioned disadvantage inherent in the prior art.

Another object of this invention is to provide a novel circuit arrangement of a regulated voltage supply circuit in which the output DC voltage is greatlyregulated regardless of variations in an operating voltage supplied to the circuit.

A further object of this invention is to provide a novel regulated voltage supply circuit which has a specific temperature characteristic that may correspond to, and compensate for the temperature characteristic of a semiconductor amplifier connected therewith.

A still further object of this invention is to provide a novel regulated voltage supply circuit suitable for fabrication as an integrated circuit.

SUMMARY OF THE INVENTION The present invention provides an improved regulated voltage supply circuit, especially for a transistor amplifier, which produces a greatly regulated DC voltage. The DC voltage derived from the circuit has a specific temperature characteristic to compensate for or cancel that of the transistor amplifier to which the DC voltage is supplied.

The circuit according to the present invention includes first, second and third transistors of one conductivity type and a fourth transistor of the opposite conductivity type. The emitter electrode of the first transistor is connected to a first voltage terminal of a voltage source and the collector electrode of the same is connected to a second voltage terminal of the voltage source through a first resistor.

The emitter electrode of the second transistor is connected to the first voltage terminal through a second resistor and is also connected to the baseelectrode of the first transistor. Thus, the first and second transistors operate as a constant current supply circuit for the remaining parts of the circuit and further form a first degenerative feedback circuit for the regulation of the output voltage of the circuit. Theemitter electrode of the third transistor is connected to the collector electrode of the second transistor and the collector electrode of the third transistor is connected to the second voltage terminal. The base electrodes of the third and fourth transistors are connected to each other, and the collector and emitter electrodes of the fourth transistor are connected to the emitter electrode of the second transistor and the second voltage terminal respectively.

Thus, the emitter-collector pathof the second transistor, the emitter-base path of the third transistor and the base-collector path of the fourth transistor together form a second degenerative feedback loop for the reg?- lation of the output voltage and a greatly regulated or stabilized DC output voltage is obtained from the collector of the second transistor.

The output DC voltage of the above arrangement becomes ZV and may be approximately on the order of 1.4 volts, and the output voltage has a temperature characteristic corresponding to that of a pair of series connected PN junctions.

When the output voltage is to be increased or it is desired that the temperature characteristic be different from that described above, a number of forward biased PN junctions are provided either between the base electrodes of the third and fourth transistors, between the collector electrode of the second transistor or the output terminal and the emitter electrode of the third transistor or between the emitter electrode of the fourth transistor and the second voltage terminal.

BRIEF DESCRIPTION OF THE DRAWINGS FIG.-1 is a circuit diagram showing an example of the invention; and

FIGS. 2 to 8, inclusive, are circuit diagrams showing other embodiments of the invention.

DESCRIPTION OF THE PREFERRED EMBODIMENTS Regulated or constant voltage supply circuits according to this invention will be hereinafter described with reference to the drawings throughout which the same reference numerals and characters are used to designate like elements. Referring initially to FIG. 1, it will be seen that the regulated or constant voltage supply circuit there shown includes transistors 1, 2 and 3 of the same conductivity type and a transistor 4 of the opposite conductivity type.

In the embodiment of FIG. 1, the emitter electrode of the transistor 1 is connected to an electric power source terminal 11 of +Vcc, while its collector and base electrodes are connected to the base and emitter electrodes of the transistor 2, respectively. The base electrode of the transistor 1 is further connected through a resistor 21 to the power source terminal 11 and the collector electrode thereof is connected througha resistor 22 to a reference voltage terminal 13 such,'for example, as the ground. The collector electrode. of the transistor 2 is connected to an output ter-, minal 12 and also to the emitter electrode of the transistor 3. The collector electrode of transistor 3 is connected to the reference voltage terminal 13 and its base electrode is connected to the base electrode of the transistor 4. The emitter electrode of the transistor 4 is connectedto the reference voltage terminal 13 and the collector electrode thereof isconnected to the base electrode of the transistor ,l. A suitable load circuit30 is connected between the output terminal 12 and the reference voltage terminal 13. The regulated or constant voltage supply circuit shown in FIG. 1 can be formed on a single semiconductor wafer asa monolithic integrated circuit and when the output voltage therefrom is supplied to external circuits, the terminals 11 to 13 serve as external connection terminals, or the regulated or constant voltage supply circuit can be formed as an integrated circuit on the same semiconductor wafer as a-circu'it to which the output from the regulated or constant voltage supply circuit'is to be applied. Y Y I In the operation of the circuit shown =inFIG. -1, the transistors 1 and 2 together operate as a constant current supply circuit for the remaining partsof the circuit. Since a negative feedback path is formed from the collector electrode to the base electrode of the transistor 1 through the base-emitter path of the transistor 2, the collector currents, namely, the output currents I and I, are regulated with respect to the supply voltage Vcc and the temperature and variations of the currents I, and I, are suppressed to a certain degree when the supply voltage Vcc or, the temperature'changes.

Such a circuit arrangement is often used in a regulated voltage supply circuit of the prior art.

However, the regulating operation of the transistors l and 2 is actually insufficient and the currents I, and I, do, in fact, change in accordance with the change of the supply voltage Vcc or the temperature in the same directiomWhen the power supply voltage Vcc or the temperature changes, for example, increases and the collectorcurrent I, of the transistor 1 increases, the voltage V,.across the base-emitter of the transistor is increasedto thereby increase the currentv R (where R represents the resistance value of the resistor 21) flowing through the resistor 21. As a result, the collector currents of the transistors 2 and 3 tend to increase and hence their base currents also tend to increase.

However, in the circuit of FIG. 1, the path from the collector electrode of the transistor 2 through the emitter-base path .of the transistor 3 and the base-collector path of the transistor 4 to the emitter electrode of the transistor 2 forms the negative current feedback loop, so that, when the base current of the transistor 3 increases, the base current of the transistor 4 also increases to increase the current which flows into the collector electrode of the' transistor 4 from the resistor 21. The increase of the collector current I, of the transistor 2 caused by the increase of the power supply voltage Vcc or the temperature is cancelled by the increased current which flows into the collector electrode of transistor 4 from resistor 21, and hence the collector current I, is kept substantially constant irrespective of the power supply voltage Vcc or the temperature. If the collector current I is thus kept substantially constant, the voltage V, and V across the base-emitter of the transistor 3 and across that of the transistor 4 are minal 12 irrespective of the power supply voltage Vcc.

The output voltage of (V +V has a temperature characteristic corresponding to'that of two PN junctions, sothat in the case where the load circuit 30 is, for example, a so-called Darlington amplifier consisting of two transistors, and if the output" voltage of V ,'+V, is used as a bias voltage for the base-emitter thereof, the amplifier can be made stable for-temperature change; Further, the DC potential in the load circuit 30 is kept constant relative tothe variations of the supply voltage Vcc because the current I, is made to be constant.

-With theregulated or constant voltage supply circuit according to this invention, at the terminal 12 there is obtained a-voltagewhich does not vary with variations of the power supply voltage 'Vcc'and which has a temperature characteristic similar to that of one or'more PN junctions. Further, the entire circuit .can be forme as a monolithic integrated circuit.

- In the circuit shown in FIG. 1, the output voltage is V +V, and may be on the order of 1.4 volts. In the circuit shown in FIG. 2, however,.a number of diodes 5 ,5 5,, are .connectedin series between the base electrodes of the transistors 4 and 3 as PN junction elements to make the output voltage ,as V +V +nV (where'V represents avoltage across each of the diodes5 ,5, 5,). Thus, with thelcircuit shown in FIG.

As shown in FIG. 3, in place of the diodes -s,,s,,

5,,, a number of transistors 6a, ,6n may be connectedbetween the transistors 4 and 3 respectively in the Darlington manner to obtain an output similar to that of the embodiment of FIG. 2 when the number of transistors 6a 6n is one-half of the number of diodes 5, .5',,.

In the circuit shown in FIG. 4, an emitter follower transistor 7 is provided as a buffer circuit to obtain a large output current. In this case, the output voltage can be made low as compared with that of the circuit shown in FIG. 1 by means of the voltage between the base-emitter of the transistor 7, and such output voltage has a temperature characteristic corresponding to that of one PN junction.

In the circuit shown in FIG. 5, diodes 8a to 8n and a resistor 9 are added to the circuit shown in FIG. 1 to stabilize the collector current of the transistor 1 with respect to the variation of the power supply voltage Vcc. With the circuit of Fig. 5, an output voltage which is more stable than that of FIG. 1 can be obtained.

In the circuit shown in FIG. 6, a pair of transistors 31 and 32, which are connected similarly to the transistors l and 2, and a resistor 33 are added to the circuit shown in FIG. 1 to stabilize the collector current of the transistor 1 with respect to the variation of power supply voltage Vcc. With the circuit of this example, the output voltage, similarly to that in FIG. 5, is more stable than the output voltage obtained with the circuit of FIG. 1.

Although preferred embodiments of this invention have been described as above in detail, it is to be understood that various changes, substitutions and alterations can be made therein without departing from the spirit and scope of the novel concepts of the invention as defined by the appended claims.

What is claimed is:

1. A regulated voltage supply circuit comprising:

A. first, second and third transistors of one conductivity type each having base, emitter and collector electrodes;

B. a fourth transistor of the opposite conductivity type having base, emitter and collector electrodes;

C. a voltage supply source having first and second voltage terminals;

D. circuit means'for connecting the emitter and collector electrodes of said first transistor to said first and second voltage terminals respectively with a first impedance between the collector electrode and said second voltage terminal;

E. circuit means for connecting the emitter electrode of said second transistor to said first voltage terminal through a second impedance and also to the base electrode of said first transistor;

F. circuit means for connecting the base electrode of said second transistor to the collector electrode of said first transistor;

G. circuit means for connecting the emitter and collector electrodes of said third transistor to the collector electrode of said second transistor and said second voltage terminal respectively;

H. circuit means for connecting the base electrodes of said third and fourth transistors to each other;

I. circuit means for connecting the collector and emitter electrodes of said fourth transistor to the emitter electrode of said second transistor and said second voltage terminal respectively; and

J. an output terminal, and means connecting said output terminal to the collector electrode of said second transistor.

2. A regulated voltage supply circuit according to claim 1, wherein said first and second impedances are first and second resistors respectively.

3. A regulated voltage supply circuit according to claim 1, further comprising a number of forward biased PN junctions between the base electrodes of said third and fourth transistors and in which said number is a positive integer.

4. A regulated voltage supply circuit according to claim 1, further comprising a number of forward biased PN junctions between said output terminal and the emitter electrode of said third transistor, and in which said number is a positive integer.

5. A regulated voltage supply circuit according to claim 1, further comprising a number of forward biased PN junctions between the emitter electrode of said fourth transistor and said second voltage terminal, and in which said number is a positive integer.

6. A regulated voltage supply circuit according to claim 1, wherein said means connecting the output terminal to the collector electrode of said second transistor includes a fifth transistor having base, emitter and collector electrodes, said fifth transistor being connected in an emitter follower configuration with its .base electrode connected to the collector electrode of said second transistor and said output terminal being connected with the emitter electrode of said fifth transistor. V

7. A regulated voltage supply circuit according to claim 1, further comprising a third impedance interposed between said first impedance and said second voltage terminal, and a plurality of series-connected diodes connected between first voltage terminal and a junction between said first and third impedances for stabilizing the collector current of said transistor with respect to variations in the voltage at said supply source.

8. A regulated voltage supply circuit according to claim 1, further comprising fifth and sixth transistors each having base, emitter and collector electrodes, a third impedance, circuit means connecting the collector and emitter electrodes of said fifth transistor to said collector electrode of said first transistor and to said first impedance, respectively, circuit means connecting said emitter and base electrodes of said fifth transistor to said base and collector electrodes, respectively, of said sixth transistor, and circuit means connecting said collector and emitter electrodes of said sixth transistor to said first and second voltage terminals, respectively, with said third impedance interposedbetween said first voltage terminal and said collector electrode of the sixth transistor.

Claims (8)

1. A regulated voltage supply circuit comprising: A. first, second and third transistors of one conductivity type each having base, emitter and collector electrodes; B. a fourth transistor of the opposite conductivity type having base, emitter and collector electrodes; C. a voltage supply source having first and second voltage terminals; D. circuit means for connecting the emitter and collector electrodes of said first transistor to said first and second voltage terminals respectively with a first impedance between the collector electrode and said second voltage terminal; E. circuit means for connecting the emitter electrode of said second transistor to said first voltage terminal through a second impedance and also to the base electrode of said first transistor; F. circuit means for connecting the base electrode of said second transistor to the collector electrode of said first transistor; G. circuit means for connecting the emitter and collector electrodes of said third transistor to the collector electrode of said second transistor and said second voltage terminal respectively; H. circuit means for connecting the base electrodes of said third and fourth transistors to each other; I. circuit means for connecting the collector and emitter electrodes of said fourth transistor to the emitter electrode of said second transistor and said second voltage terminal respectively; and J. an output terminal, and means connecting said output terminal to the collector electrode of said second transistor.
2. A regulated voltage supply circuit according to claim 1, wherein said first and second impedances are first and second resistors respectively.
3. A regulated voltage supply circuit according to claim 1, further comprising a number of forward biased PN junctions between the base electrodes of said third and fourth transistors and in which said number is a positive integer.
4. A regulated voltage supply circuit according to claim 1, further comprising a number of forward biased PN junctions between said output terminal and the emitter electrode of said third transistor, and in which said number is a positive integer.
5. A regulated voltage supply circuit according to claim 1, further comprising a number of forward biased PN junctions between the emitter electrode of said fourth transistor and said second voltage terminal, and in which said number is a positive integer.
6. A regulated voltage supply circuit according to claim 1, wherein said means connecting the output terminal to the collector electrode of said second transistor includes a fifth transistor having base, emitter and collector electrodes, said fifth transistor being connected in an emitter follower configuration with its base electrode connected to the collector electrode of said second transistor and said output terminal being connected with the emitter electrode of said fifth transistor.
7. A regulated voltage supply circuit according to claim 1, further comprising a third impedance interposed between said first impedance and said second voltage terminal, and a plurality of series-connected diodes connected between first voltage terminal and a junction between said first and third impedances for stabilizing the collector current of said transistor with respect to variations in the voltage at said supply source.
8. A regulated voltage supply circuit according to claim 1, further comprising fifth and sixth transistors each having base, emitter and collector electrodes, a third impedance, circuit means connecting the collector and emitter electRodes of said fifth transistor to said collector electrode of said first transistor and to said first impedance, respectively, circuit means connecting said emitter and base electrodes of said fifth transistor to said base and collector electrodes, respectively, of said sixth transistor, and circuit means connecting said collector and emitter electrodes of said sixth transistor to said first and second voltage terminals, respectively, with said third impedance interposed between said first voltage terminal and said collector electrode of the sixth transistor.
US3828241A 1971-07-30 1973-10-10 Regulated voltage supply circuit which compensates for temperature and input voltage variations Expired - Lifetime US3828241A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
US38356971 true 1971-07-30 1971-07-30
JP7888872A JPS5323936B2 (en) 1972-08-07 1972-08-07
US3828241A US3828241A (en) 1971-07-30 1973-10-10 Regulated voltage supply circuit which compensates for temperature and input voltage variations

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US3828241A US3828241A (en) 1971-07-30 1973-10-10 Regulated voltage supply circuit which compensates for temperature and input voltage variations

Publications (1)

Publication Number Publication Date
US3828241A true US3828241A (en) 1974-08-06

Family

ID=27302838

Family Applications (1)

Application Number Title Priority Date Filing Date
US3828241A Expired - Lifetime US3828241A (en) 1971-07-30 1973-10-10 Regulated voltage supply circuit which compensates for temperature and input voltage variations

Country Status (1)

Country Link
US (1) US3828241A (en)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3908162A (en) * 1974-03-01 1975-09-23 Motorola Inc Voltage and temperature compensating source
US4017788A (en) * 1975-11-19 1977-04-12 Texas Instruments Incorporated Programmable shunt voltage regulator circuit
US4295088A (en) * 1978-12-11 1981-10-13 Rca Corporation Temperature-sensitive voltage divider
US4322676A (en) * 1978-08-02 1982-03-30 Fujitsu Limited Bias circuit
US5134310A (en) * 1991-01-23 1992-07-28 Ramtron Corporation Current supply circuit for driving high capacitance load in an integrated circuit
EP0565116A2 (en) * 1992-04-10 1993-10-13 Canon Kabushiki Kaisha Bias circuit for photodiode
US5315230A (en) * 1992-09-03 1994-05-24 United Memories, Inc. Temperature compensated voltage reference for low and wide voltage ranges
US5770945A (en) * 1996-06-26 1998-06-23 The Regents Of The University Of California Seafloor magnetotelluric system and method for oil exploration
US6331799B1 (en) * 1999-02-26 2001-12-18 Fujitsu Quantum Devices Limited Bias circuit for control input of power transistor
US20040153246A1 (en) * 2003-01-30 2004-08-05 Kent Byerly Methods of processing magnetotelluric signals
US20080091354A1 (en) * 2006-10-11 2008-04-17 Byerly Kent A Methods of processing magnetotelluric signals

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3522521A (en) * 1965-11-04 1970-08-04 Hawker Siddeley Dynamics Ltd Reference voltage circuits
US3549910A (en) * 1967-09-18 1970-12-22 Honeywell Inc Electric current-voltage converting circuit
US3612984A (en) * 1970-05-08 1971-10-12 Motorola Inc Negative voltage regulator adapted to be constructed as an integrated circuit
US3617859A (en) * 1970-03-23 1971-11-02 Nat Semiconductor Corp Electrical regulator apparatus including a zero temperature coefficient voltage reference circuit

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3522521A (en) * 1965-11-04 1970-08-04 Hawker Siddeley Dynamics Ltd Reference voltage circuits
US3549910A (en) * 1967-09-18 1970-12-22 Honeywell Inc Electric current-voltage converting circuit
US3617859A (en) * 1970-03-23 1971-11-02 Nat Semiconductor Corp Electrical regulator apparatus including a zero temperature coefficient voltage reference circuit
US3612984A (en) * 1970-05-08 1971-10-12 Motorola Inc Negative voltage regulator adapted to be constructed as an integrated circuit

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
IBM Technical Disclosure Bulletin, Vol. 14, No. 5, Oct. 1971; pg. 1495, Current Source by Platt et al. *

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3908162A (en) * 1974-03-01 1975-09-23 Motorola Inc Voltage and temperature compensating source
US4017788A (en) * 1975-11-19 1977-04-12 Texas Instruments Incorporated Programmable shunt voltage regulator circuit
US4322676A (en) * 1978-08-02 1982-03-30 Fujitsu Limited Bias circuit
US4295088A (en) * 1978-12-11 1981-10-13 Rca Corporation Temperature-sensitive voltage divider
EP0496321A3 (en) * 1991-01-23 1995-01-11 Ramtron Corp Current supply circuit for driving high capacitance load in an integrated circuit
US5134310A (en) * 1991-01-23 1992-07-28 Ramtron Corporation Current supply circuit for driving high capacitance load in an integrated circuit
EP0496321A2 (en) * 1991-01-23 1992-07-29 Ramtron International Corporation Current supply circuit for driving high capacitance load in an integrated circuit
EP0565116A2 (en) * 1992-04-10 1993-10-13 Canon Kabushiki Kaisha Bias circuit for photodiode
EP0565116A3 (en) * 1992-04-10 1993-10-20 Canon Kabushiki Kaisha Bias circuit for photodiode
US5343034A (en) * 1992-04-10 1994-08-30 Canon Kabushiki Kaisha Bias circuit for photodiode having level shift circuitry
US5315230A (en) * 1992-09-03 1994-05-24 United Memories, Inc. Temperature compensated voltage reference for low and wide voltage ranges
US5770945A (en) * 1996-06-26 1998-06-23 The Regents Of The University Of California Seafloor magnetotelluric system and method for oil exploration
US6331799B1 (en) * 1999-02-26 2001-12-18 Fujitsu Quantum Devices Limited Bias circuit for control input of power transistor
US20040153246A1 (en) * 2003-01-30 2004-08-05 Kent Byerly Methods of processing magnetotelluric signals
US6950747B2 (en) 2003-01-30 2005-09-27 Kent Byerly Methods of processing magnetotelluric signals
US20080091354A1 (en) * 2006-10-11 2008-04-17 Byerly Kent A Methods of processing magnetotelluric signals
US8055446B2 (en) 2006-10-11 2011-11-08 Byerly Kent A Methods of processing magnetotelluric signals

Similar Documents

Publication Publication Date Title
US3497824A (en) Differential amplifier
US3290520A (en) Circuit for detecting amplitude threshold with means to keep threshold constant
US3531730A (en) Signal translating stage providing direct voltage
US4894562A (en) Current switch logic circuit with controlled output signal levels
US4349778A (en) Band-gap voltage reference having an improved current mirror circuit
US4525663A (en) Precision band-gap voltage reference circuit
US4626770A (en) NPN band gap voltage reference
US4792748A (en) Two-terminal temperature-compensated current source circuit
US5229711A (en) Reference voltage generating circuit
US4532479A (en) Differential amplifier circuit with rail-to-rail capability
US3534281A (en) Soft saturating transistor amplifier
US3743850A (en) Integrated current supply circuit
US4079336A (en) Stacked transistor output amplifier
US4008441A (en) Current amplifier
US3925718A (en) Current mirror and degenerative amplifier
US2716729A (en) Transistor circuits with constant output current
US4808907A (en) Current regulator and method
US3962592A (en) Current source circuit arrangement
US4380706A (en) Voltage reference circuit
US6124704A (en) Reference voltage source with temperature-compensated output reference voltage
US3979693A (en) Crystal-controlled oscillator having sinusoidal and square-wave output signals
US5055719A (en) Current conveyor circuit
US5153529A (en) Rail-to-rail input stage of an operational amplifier
US4327319A (en) Active power supply ripple filter
US4607232A (en) Low voltage amplifier circuit