DE69312544D1 - Plasmaerzeugungsverfahren und dieses Verfahren verwendende Plasmaerzeugungsvorrichtung - Google Patents

Plasmaerzeugungsverfahren und dieses Verfahren verwendende Plasmaerzeugungsvorrichtung

Info

Publication number
DE69312544D1
DE69312544D1 DE69312544T DE69312544T DE69312544D1 DE 69312544 D1 DE69312544 D1 DE 69312544D1 DE 69312544 T DE69312544 T DE 69312544T DE 69312544 T DE69312544 T DE 69312544T DE 69312544 D1 DE69312544 D1 DE 69312544D1
Authority
DE
Germany
Prior art keywords
plasma generating
generating device
plasma
generating method
generating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69312544T
Other languages
English (en)
Other versions
DE69312544T2 (de
Inventor
Kenji Harafuji
Mitsuhiro Ohkuni
Tokuhiko Tamaki
Masafumi Kubota
Noboru Nomura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Application granted granted Critical
Publication of DE69312544D1 publication Critical patent/DE69312544D1/de
Publication of DE69312544T2 publication Critical patent/DE69312544T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32155—Frequency modulation
    • H01J37/32165—Plural frequencies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
DE69312544T 1992-03-31 1993-03-30 Plasmaerzeugungsverfahren und dieses Verfahren verwendende Plasmaerzeugungsvorrichtung Expired - Fee Related DE69312544T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7778592 1992-03-31

Publications (2)

Publication Number Publication Date
DE69312544D1 true DE69312544D1 (de) 1997-09-04
DE69312544T2 DE69312544T2 (de) 1997-12-04

Family

ID=13643633

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69312544T Expired - Fee Related DE69312544T2 (de) 1992-03-31 1993-03-30 Plasmaerzeugungsverfahren und dieses Verfahren verwendende Plasmaerzeugungsvorrichtung

Country Status (4)

Country Link
US (1) US5345145A (de)
EP (1) EP0563899B1 (de)
KR (1) KR930021034A (de)
DE (1) DE69312544T2 (de)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06333857A (ja) * 1993-05-27 1994-12-02 Semiconductor Energy Lab Co Ltd 成膜装置および成膜方法
FR2706699B1 (fr) * 1993-06-10 1995-09-15 Gec Alsthom T & D Sa Dispositif pour la fourniture d'une tension à un circuit électronique, en particulier à un circuit électronique associé à un capteur d'intensité placé sur une ligne électrique.
US5970907A (en) 1997-01-27 1999-10-26 Canon Kabushiki Kaisha Plasma processing apparatus
US6063454A (en) * 1997-06-24 2000-05-16 Samsung Corning Co., Ltd. Impedance matching device for SiO2 coating device and a method of impedance-matching using the same
US6143124A (en) * 1997-08-22 2000-11-07 Micron Technology, Inc. Apparatus and method for generating a plasma from an electromagnetic field having a lissajous pattern
DE19737244A1 (de) * 1997-08-27 1999-03-04 Harald Tobies Vorrichtung und Verfahren zur Regelung der Phasenlage von Hochfrequenzelektroden bei Plasmaprozessen
US6182604B1 (en) 1999-10-27 2001-02-06 Varian Semiconductor Equipment Associates, Inc. Hollow cathode for plasma doping system
US8617351B2 (en) 2002-07-09 2013-12-31 Applied Materials, Inc. Plasma reactor with minimal D.C. coils for cusp, solenoid and mirror fields for plasma uniformity and device damage reduction
US8048806B2 (en) 2000-03-17 2011-11-01 Applied Materials, Inc. Methods to avoid unstable plasma states during a process transition
US6554979B2 (en) * 2000-06-05 2003-04-29 Applied Materials, Inc. Method and apparatus for bias deposition in a modulating electric field
TWI283899B (en) * 2002-07-09 2007-07-11 Applied Materials Inc Capacitively coupled plasma reactor with magnetic plasma control
WO2007106863A2 (en) * 2006-03-14 2007-09-20 University Of Notre Dame Du Lac Methods and apparatus for reducing noise via a plasma fairing
AU2007317415A1 (en) * 2006-11-02 2008-05-15 The University Of Notre Dame Du Lac Methods and apparatus for reducing drag via a plasma actuator
US9541106B1 (en) 2007-01-03 2017-01-10 Orbitel Research Inc. Plasma optimized aerostructures for efficient flow control
EP2097920B1 (de) * 2007-07-23 2017-08-09 TRUMPF Hüttinger GmbH + Co. KG Plasmaversorgungseinrichtung
US8073094B2 (en) * 2007-10-24 2011-12-06 Nassim Haramein Device and method for simulation of magnetohydrodynamics
US8933595B2 (en) 2007-10-24 2015-01-13 Nassim Haramein Plasma flow interaction simulator
JP5764433B2 (ja) * 2011-08-26 2015-08-19 株式会社日立ハイテクノロジーズ 質量分析装置及び質量分析方法
US10095114B2 (en) * 2014-11-14 2018-10-09 Applied Materials, Inc. Process chamber for field guided exposure and method for implementing the process chamber
JP2019145397A (ja) * 2018-02-22 2019-08-29 東芝メモリ株式会社 半導体製造装置および半導体装置の製造方法
US11650506B2 (en) 2019-01-18 2023-05-16 Applied Materials Inc. Film structure for electric field guided photoresist patterning process
CN112663028B (zh) * 2020-02-10 2023-04-14 拉普拉斯新能源科技股份有限公司 一种pecvd镀膜机
US11429026B2 (en) 2020-03-20 2022-08-30 Applied Materials, Inc. Lithography process window enhancement for photoresist patterning
CN113549892B (zh) * 2021-07-01 2023-06-16 安徽理工大学 一种用于金属管内壁改性的装置及方法
CN113846317B (zh) * 2021-09-24 2024-06-25 中山市博顿光电科技有限公司 电离腔室、射频离子源及其控制方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3442758A (en) * 1963-08-07 1969-05-06 Litton Industries Inc Containment of a plasma by a rotating magnetic field
US3523206A (en) * 1967-10-31 1970-08-04 Entropy Ltd Plasma containment means
JPS59139627A (ja) * 1983-01-31 1984-08-10 Hitachi Ltd ドライエツチング装置
US4585668A (en) * 1983-02-28 1986-04-29 Michigan State University Method for treating a surface with a microwave or UHF plasma and improved apparatus
JPS59232420A (ja) * 1983-06-16 1984-12-27 Hitachi Ltd ドライエツチング装置
US4630566A (en) * 1984-08-16 1986-12-23 Board Of Trustees Operating Michigan State University Microwave or UHF plasma improved apparatus
US4572759A (en) * 1984-12-26 1986-02-25 Benzing Technology, Inc. Troide plasma reactor with magnetic enhancement
US4589123A (en) * 1985-02-27 1986-05-13 Maxwell Laboratories, Inc. System for generating soft X rays
GB2185349B (en) * 1985-05-09 1989-07-05 Commw Of Australia Plasma generator
US4859908A (en) * 1986-09-24 1989-08-22 Matsushita Electric Industrial Co., Ltd. Plasma processing apparatus for large area ion irradiation
JP2587924B2 (ja) * 1986-10-11 1997-03-05 日本電信電話株式会社 薄膜形成装置
US4792732A (en) * 1987-06-12 1988-12-20 United States Of America As Represented By The Secretary Of The Air Force Radio frequency plasma generator
JPH01297141A (ja) * 1988-05-25 1989-11-30 Canon Inc マイクロ波プラズマ処理装置
JP2643457B2 (ja) * 1989-06-28 1997-08-20 三菱電機株式会社 プラズマ処理装置及びその方法

Also Published As

Publication number Publication date
DE69312544T2 (de) 1997-12-04
EP0563899B1 (de) 1997-07-30
US5345145A (en) 1994-09-06
EP0563899A1 (de) 1993-10-06
KR930021034A (ko) 1993-10-20

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee