DE69316099D1 - Magnetoresistiver Sensor mit antiferromagnetischer Schicht zur Austausch-Vormagnetisierung - Google Patents

Magnetoresistiver Sensor mit antiferromagnetischer Schicht zur Austausch-Vormagnetisierung

Info

Publication number
DE69316099D1
DE69316099D1 DE69316099T DE69316099T DE69316099D1 DE 69316099 D1 DE69316099 D1 DE 69316099D1 DE 69316099 T DE69316099 T DE 69316099T DE 69316099 T DE69316099 T DE 69316099T DE 69316099 D1 DE69316099 D1 DE 69316099D1
Authority
DE
Germany
Prior art keywords
antiferromagnetic layer
magnetoresistive sensor
exchange bias
bias
exchange
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69316099T
Other languages
English (en)
Inventor
Tsann Lin
James Kent Howard
Cherngye Hwang
Daniele Mauri
Norbert Staud
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of DE69316099D1 publication Critical patent/DE69316099D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
    • G11B5/3906—Details related to the use of magnetic thin film layers or to their effects
    • G11B5/3929—Disposition of magnetic thin films not used for directly coupling magnetic flux from the track to the MR film or for shielding
    • G11B5/3932—Magnetic biasing films

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Hall/Mr Elements (AREA)
  • Magnetic Heads (AREA)
DE69316099T 1992-07-28 1993-05-21 Magnetoresistiver Sensor mit antiferromagnetischer Schicht zur Austausch-Vormagnetisierung Expired - Lifetime DE69316099D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/920,943 US5315468A (en) 1992-07-28 1992-07-28 Magnetoresistive sensor having antiferromagnetic layer for exchange bias

Publications (1)

Publication Number Publication Date
DE69316099D1 true DE69316099D1 (de) 1998-02-12

Family

ID=25444662

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69316099T Expired - Lifetime DE69316099D1 (de) 1992-07-28 1993-05-21 Magnetoresistiver Sensor mit antiferromagnetischer Schicht zur Austausch-Vormagnetisierung

Country Status (5)

Country Link
US (3) US5315468A (de)
EP (1) EP0581418B1 (de)
JP (1) JP2769092B2 (de)
DE (1) DE69316099D1 (de)
SG (1) SG44386A1 (de)

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US5591532A (en) * 1992-06-16 1997-01-07 The Regents Of The University Of California Giant magnetoresistance single film alloys
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US5966272A (en) * 1993-06-21 1999-10-12 Read-Rite Corporation Magnetoresistive read head having an exchange layer
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DE4425356C2 (de) * 1993-09-29 1998-07-02 Siemens Ag Magnetoresistiver Sensor unter Verwendung eines Sensormaterials mit perowskitähnlicher Kristallstruktur
US5408377A (en) * 1993-10-15 1995-04-18 International Business Machines Corporation Magnetoresistive sensor with improved ferromagnetic sensing layer and magnetic recording system using the sensor
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JP2748876B2 (ja) * 1995-01-27 1998-05-13 日本電気株式会社 磁気抵抗効果膜
JP2720806B2 (ja) * 1995-01-31 1998-03-04 日本電気株式会社 磁気抵抗効果型ヘッドおよびその製造方法
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US5764056A (en) * 1996-05-16 1998-06-09 Seagate Technology, Inc. Nickel-manganese as a pinning layer in spin valve/GMR magnetic sensors
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JP3291208B2 (ja) 1996-10-07 2002-06-10 アルプス電気株式会社 磁気抵抗効果型センサおよびその製造方法とそのセンサを備えた磁気ヘッド
US5717550A (en) * 1996-11-01 1998-02-10 Read-Rite Corporation Antiferromagnetic exchange biasing using buffer layer
WO1998022636A1 (fr) * 1996-11-20 1998-05-28 Kabushiki Kaisha Toshiba Cible pour pulverisation, et film antiferromagnetique et element a effet magnetoresistant formes a l'aide de ladite cible
US6034847A (en) * 1996-12-25 2000-03-07 Hitachi, Ltd. Apparatus and thin film magnetic head with magnetic membrane layers of different resistivity
JP3219713B2 (ja) * 1997-02-07 2001-10-15 アルプス電気株式会社 磁気抵抗効果素子の製造方法
JP3735443B2 (ja) * 1997-04-03 2006-01-18 株式会社東芝 交換結合膜とそれを用いた磁気抵抗効果素子、磁気ヘッドおよび磁気記憶装置
JP3255872B2 (ja) * 1997-04-17 2002-02-12 アルプス電気株式会社 スピンバルブ型薄膜素子及びその製造方法
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JP3263004B2 (ja) * 1997-06-06 2002-03-04 アルプス電気株式会社 スピンバルブ型薄膜素子
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JP2000251223A (ja) * 1999-02-23 2000-09-14 Read Rite Smi Kk スピンバルブ磁気抵抗センサ及び薄膜磁気ヘッド
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US7433162B2 (en) * 2004-03-02 2008-10-07 Hitachi Global Storage Technologies Netherlands B.V. Magnetoresistive sensor with antiferromagnetic exchange-coupled structure formed by use of chemical-ordering enhancement layer
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Also Published As

Publication number Publication date
US5380548A (en) 1995-01-10
JPH0676247A (ja) 1994-03-18
EP0581418A1 (de) 1994-02-02
US5315468A (en) 1994-05-24
JP2769092B2 (ja) 1998-06-25
SG44386A1 (en) 1997-12-19
US5436778A (en) 1995-07-25
EP0581418B1 (de) 1998-01-07

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