WO2018226179A1 - Multi layer structure with spontaneous exchange bias effect - Google Patents
Multi layer structure with spontaneous exchange bias effect Download PDFInfo
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- WO2018226179A1 WO2018226179A1 PCT/TR2017/050526 TR2017050526W WO2018226179A1 WO 2018226179 A1 WO2018226179 A1 WO 2018226179A1 TR 2017050526 W TR2017050526 W TR 2017050526W WO 2018226179 A1 WO2018226179 A1 WO 2018226179A1
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- Prior art keywords
- layer
- ferromagnetic
- nimn
- layer structure
- effect
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/3227—Exchange coupling via one or more magnetisable ultrathin or granular films
- H01F10/3231—Exchange coupling via one or more magnetisable ultrathin or granular films via a non-magnetic spacer
- H01F10/3236—Exchange coupling via one or more magnetisable ultrathin or granular films via a non-magnetic spacer made of a noble metal, e.g.(Co/Pt) n multilayers having perpendicular anisotropy
Definitions
- This invention is about multilayer thin film structure which represents Spontaneous Exchange Bias - SEB.
- the invention is on spontaneous exchange bias in Antiferromagnetic/Ferromagnetic bilayer structure where antiferromagnetic layer is NiMn (nickel -manganese) and ferromagnetic layer is cobalt or any ferromagnetic thinfilm layer in a multilayer structure with the (Si/Pt(tp t )/Ni45Mn55(tAFM)/Co(tFM)/Pt(30A)) formulation.
- US patent application Ser. No. 2002101692A1 which is known in the art, discloses a ferromagnetic-antiferromagnetic structure that can be used in disc recording operations where the antiferromagnetic layer of the ferromagnetic layer enhances the exchange shift effect.
- German patent document DE19848776A1 refers to the production of a magnetic head.
- Ferromagnetic Mn layer gotten from Ru-Mn, Rh-Mn, Ir-Mn, Pd-Mn, Pt-Mn alloys refers to exchanged coupled structure. It is seen that various techniques have been studied in order to be able to direct the exchange coupling and exchange shift effect in the magnetic materials for the desired purposes. However, it has been observed that the spontaneous exchange shift effect is less frequently encountered in natural structures than is needed.
- Purpose of the invention is realizing magnetic materials representing spontaneous exchange bias effect.
- Another purpose of the invention is the realization of a multilayered structure of synthetically produced (Si / Pt (tPt) / Ni45Mn55 (tAFM) / Co (tFM) / Pt (30A)) formulation in which the spontaneous exchange effect will be effected.
- a multi-layer structure with a formulation of (Si / Pt (tPt) / Ni45Mn55 (tAFM) / Co (tFM) / Pt (30 Angstrom)) was produced in which a self- exchange shift effect (SEB) was observed without re-annealing.
- SEB self- exchange shift effect
- the material having the magnetic characteristics of the present invention is a material which exhibits a self-exchange shift effect (Si / Pt (tPt) / Ni45Mn55 (tAFM) / Co (tFM) / Pt (30A)) or (Cam / Pt (tPt) / Ni45Mn55 (tAFM) / Co (tFM) / Pt (30 Angstrom) formulated multilayer structure itself.
- the material having the magnetic properties of the present invention includes the structure of [NiMn / Co] in which the effect of the spontaneous exchange bias shift is observed.
- the invention relates to a spontaneous exchange bias effect (SEB) without needing for re-annealing, precipitation, in a multi-structure Si / Pt (tPt) / Ni45Mn55 (tAFM) / Co (tFM) / Pt (30A) formulation.
- the magnetic properties of the multi-structure vary depending on the thickness of the intermediate layer, Pt layer, antiferromagnetic NiMn layer and ferromagnetic Co layer.
- the exchange coupling between NiMn and Co is increased by the thickening of the Pt layer.
- the NiMn layer was directly grown on the intermediate layer to keep the Pt layer at a certain thickness for visualization of the spontaneous exchange bias effect (SEB) in the material (multi-layer structure).
- the thicknesses of the Co and NiMn layers were also produced to the required thickness for observing the exchange bias effect.
- Si or glass or similar substrate can be used.
- Platinum is the thickness of the layer (t Pt ), starting from a thickness of 0.6 nm, can be very thick.
- Pt or Au or Ru is required for the formation of Z-directional texture.
- Antiferromagnetic NiMn is the thickness of the layer and its thickness (tAFM) can be changed between 4 nm and 1000 nm.
- the ferromagnetic layer any ferromagnetic layer above the Curie temperature room temperature can be used.
- Co, Fe, [Co / Pt] n , [Fe / Au] n ferromagnetic film the film thickness can be adjusted between 0.6 nm and 50 nm.
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- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Thin Magnetic Films (AREA)
Abstract
The present invention relates to a multi-layer structure with a [NiMn / Co] content (Si/Pt (tPt) /Ni45Mn55 (tAFM) /Co (tFM)/ Pt (30A) ) formulation in which the spontaneous exchange shift effect (SEB) is observed. In this invention, a multi¬ layer structure formulated with (Si/Pt (tPt) /Ni45Mn55 (tAFM) /Co (tFM) /Pt(30A)) was fabricated in which spontaneous exchange shift effect (SEB) was observed without requiring annealing and precipitation processes. The thickness of the NiMn layer and the ferromagnetic Co layer were changed, and the NiMn layer was directly grown on the intermediate layer in order to see this effect.
Description
MULTI LAYER STRUCTURE WITH SPONTEOUS EXCHANGE BIAS
EFFECT
Technical Issue
This invention is about multilayer thin film structure which represents Spontaneous Exchange Bias - SEB.
The invention is on spontaneous exchange bias in Antiferromagnetic/Ferromagnetic bilayer structure where antiferromagnetic layer is NiMn (nickel -manganese) and ferromagnetic layer is cobalt or any ferromagnetic thinfilm layer in a multilayer structure with the (Si/Pt(tpt)/Ni45Mn55(tAFM)/Co(tFM)/Pt(30A)) formulation.
Previous Technique Important points for producing useful magnetic structures or materials are controlling successfully the magnetic properties and manipulating them. In this respect, anisotropy and exchange energies are important concepts. A strong technique for managing and orienting the magnetic properties is producing interlayers of multi magnetic structures with convenient parameters for fitting desired results.
Therefore, recently the most preferred studies have been on inter layers applications between ferromagnetic and antiferromagnetic layers. While a ferromagnetic element has high exchange parameter, comparison with this represents lower anisotropic properties. This case, at high temperatures, provides an order for a few nanometer sizes as well as leading different orientations. And
also, a few antiferromagnetic materials represent high anisotropic property and orients quite constantly. In multi structures, exchange coupling between antiferromagnetic layer and ferromagnetic layer can cause great anisotropic property and very highly constant orientation of ferromagnetic layer. In this kind of structures, the anisotropic parameter may behave unilaterally, in fact not in ferromagnetic materials. This is called the exchange shift effect.
One of the important issues that focus on the production of magnetic materials is the spontaneous exchange shift effect and the materials that show this feature and it is seen that there are studies done on such materials in technical terms.
US patent application Ser. No. 2002101692A1, which is known in the art, discloses a ferromagnetic-antiferromagnetic structure that can be used in disc recording operations where the antiferromagnetic layer of the ferromagnetic layer enhances the exchange shift effect.
In the known state of the art, the German patent document DE19848776A1 refers to the production of a magnetic head. In the title, it is mentioned a structure, containing Mn and one or more of Pt, Pd, Ir, Rh, Rh and Os, where there is a layer between antiferromagnetic layer and ferromagnetic layer to be layered non- continuously ordered.
Known case of the technique, in United States patent document with US5691864A application number, it is mentioned a multiple joint exhibiting magnetic properties.
Ferromagnetic Mn layer gotten from Ru-Mn, Rh-Mn, Ir-Mn, Pd-Mn, Pt-Mn alloys refers to exchanged coupled structure.
It is seen that various techniques have been studied in order to be able to direct the exchange coupling and exchange shift effect in the magnetic materials for the desired purposes. However, it has been observed that the spontaneous exchange shift effect is less frequently encountered in natural structures than is needed.
As a result, it is necessary to produce synthetic multi-layer structures, which can be the subject of exchange shift effect.
Purposes of the Invention and Brief Description
Purpose of the invention is realizing magnetic materials representing spontaneous exchange bias effect.
Another purpose of the invention is the realization of a multilayered structure of synthetically produced (Si / Pt (tPt) / Ni45Mn55 (tAFM) / Co (tFM) / Pt (30A)) formulation in which the spontaneous exchange effect will be effected.
In this invention, a multi-layer structure with a formulation of (Si / Pt (tPt) / Ni45Mn55 (tAFM) / Co (tFM) / Pt (30 Angstrom)) was produced in which a self- exchange shift effect (SEB) was observed without re-annealing. To demonstrate this effect, the NiMn layer and the ferromagnetic Co layer were changed in thickness, and the NiMn layer was directly grown on the intermediate layer.
Detailed Description of the Invention The material having the magnetic characteristics of the present invention is a material which exhibits a self-exchange shift effect (Si / Pt (tPt) / Ni45Mn55 (tAFM) / Co (tFM) / Pt (30A)) or (Cam / Pt (tPt) / Ni45Mn55 (tAFM) / Co (tFM) / Pt (30 Angstrom) formulated multilayer structure itself.
The material having the magnetic properties of the present invention includes the structure of [NiMn / Co] in which the effect of the spontaneous exchange bias shift is observed. The invention relates to a spontaneous exchange bias effect (SEB) without needing for re-annealing, precipitation, in a multi-structure Si / Pt (tPt) / Ni45Mn55 (tAFM) / Co (tFM) / Pt (30A) formulation. The magnetic properties of the multi-structure vary depending on the thickness of the intermediate layer, Pt layer, antiferromagnetic NiMn layer and ferromagnetic Co layer. The exchange coupling between NiMn and Co is increased by the thickening of the Pt layer. The NiMn layer was directly grown on the intermediate layer to keep the Pt layer at a certain thickness for visualization of the spontaneous exchange bias effect (SEB) in the material (multi-layer structure). The thicknesses of the Co and NiMn layers were also produced to the required thickness for observing the exchange bias effect.
In this respect, Si or glass or similar substrate can be used. Here, Platinum is the thickness of the layer (tPt), starting from a thickness of 0.6 nm, can be very thick. Pt or Au or Ru is required for the formation of Z-directional texture. Antiferromagnetic NiMn is the thickness of the layer and its thickness (tAFM) can be changed between 4 nm and 1000 nm. As the ferromagnetic layer, any ferromagnetic layer above the Curie temperature room temperature can be used. In addition, when using Co, Fe, [Co / Pt]n, [Fe / Au]n ferromagnetic film, the film thickness can be adjusted between 0.6 nm and 50 nm.
Claims
The invention is characterized by having a multi-layer thin film formed of a combination of magnetic materials exhibiting magnetic properties, which is formulated with (Si/Pt(tPt)/NixMni_x(tA™)/Co(tFM)/Pt (30A)).
A multi-layer structure as claimed in claim 1, characterized in that the substrate is a silicon or glass substrate.
A multilayer structure as in claim 1, characterized in that the platinum layer has a minimum thickness of 0.6 nm.
4. A multilayer structure as claimed in claim 1, characterized in that it is made of Pt or Au or Ru to enable z-directional texturing.
5. A multilayer structure according to claim 1, wherein when the ferromagnetic film is Co, Fe, Ni, [Co / Pt] n, [Fe / Au] and alloys thereof, the film thickness is characterized between 0.6 nm and 50 nm.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TR2016/15395 | 2016-10-28 | ||
| TR201615395 | 2016-10-28 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| WO2018226179A1 true WO2018226179A1 (en) | 2018-12-13 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/TR2017/050526 WO2018226179A1 (en) | 2016-10-28 | 2017-10-26 | Multi layer structure with spontaneous exchange bias effect |
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| WO (1) | WO2018226179A1 (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0581418A1 (en) * | 1992-07-28 | 1994-02-02 | International Business Machines Corporation | Magnetoresistive sensor having antiferromagnetic layer for exchange bias |
| US5764445A (en) * | 1995-06-02 | 1998-06-09 | Applied Magnetics Corporation | Exchange biased magnetoresistive transducer |
| US6051309A (en) * | 1996-12-26 | 2000-04-18 | Nec Corporation | Magnetoresistance effect film and method for making the same |
| US6195239B1 (en) * | 1998-03-06 | 2001-02-27 | Tdk Corporation | Magnetoresistance effect film and magnetoresistance effect type head |
-
2017
- 2017-10-26 WO PCT/TR2017/050526 patent/WO2018226179A1/en active Application Filing
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0581418A1 (en) * | 1992-07-28 | 1994-02-02 | International Business Machines Corporation | Magnetoresistive sensor having antiferromagnetic layer for exchange bias |
| US5764445A (en) * | 1995-06-02 | 1998-06-09 | Applied Magnetics Corporation | Exchange biased magnetoresistive transducer |
| US6051309A (en) * | 1996-12-26 | 2000-04-18 | Nec Corporation | Magnetoresistance effect film and method for making the same |
| US6195239B1 (en) * | 1998-03-06 | 2001-02-27 | Tdk Corporation | Magnetoresistance effect film and magnetoresistance effect type head |
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