DE69302683D1 - VERFAHREN ZUR VERMINDERUNG DER BESCHäDIGUNGSEMPFINDLICHKEIT VON KRISTALLEN MIT OPTISCHER QUALITäT - Google Patents

VERFAHREN ZUR VERMINDERUNG DER BESCHäDIGUNGSEMPFINDLICHKEIT VON KRISTALLEN MIT OPTISCHER QUALITäT

Info

Publication number
DE69302683D1
DE69302683D1 DE69302683T DE69302683T DE69302683D1 DE 69302683 D1 DE69302683 D1 DE 69302683D1 DE 69302683 T DE69302683 T DE 69302683T DE 69302683 T DE69302683 T DE 69302683T DE 69302683 D1 DE69302683 D1 DE 69302683D1
Authority
DE
Germany
Prior art keywords
crystals
sensitivity
reducing
optical quality
optical
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69302683T
Other languages
English (en)
Other versions
DE69302683T2 (de
Inventor
Patricia Morris
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
EIDP Inc
Original Assignee
EI Du Pont de Nemours and Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by EI Du Pont de Nemours and Co filed Critical EI Du Pont de Nemours and Co
Application granted granted Critical
Publication of DE69302683D1 publication Critical patent/DE69302683D1/de
Publication of DE69302683T2 publication Critical patent/DE69302683T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/14—Phosphates

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE69302683T 1992-03-31 1993-03-25 VERFAHREN ZUR VERMINDERUNG DER BESCHäDIGUNGSEMPFINDLICHKEIT VON KRISTALLEN MIT OPTISCHER QUALITäT Expired - Fee Related DE69302683T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US86086292A 1992-03-31 1992-03-31
PCT/US1993/002780 WO1993020265A2 (en) 1992-03-31 1993-03-25 Process for reducing the damage susceptibility of optical quality crystals

Publications (2)

Publication Number Publication Date
DE69302683D1 true DE69302683D1 (de) 1996-06-20
DE69302683T2 DE69302683T2 (de) 1996-11-28

Family

ID=25334213

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69302683T Expired - Fee Related DE69302683T2 (de) 1992-03-31 1993-03-25 VERFAHREN ZUR VERMINDERUNG DER BESCHäDIGUNGSEMPFINDLICHKEIT VON KRISTALLEN MIT OPTISCHER QUALITäT

Country Status (5)

Country Link
US (1) US5411723A (de)
EP (1) EP0633952B1 (de)
JP (1) JP3289905B2 (de)
DE (1) DE69302683T2 (de)
WO (1) WO1993020265A2 (de)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6620333B2 (en) * 2000-10-23 2003-09-16 The Regents Of The University Of California CO2 laser and plasma microjet process for improving laser optics
US8389099B1 (en) 2007-06-01 2013-03-05 Rubicon Technology, Inc. Asymmetrical wafer configurations and method for creating the same

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3949323A (en) * 1974-03-14 1976-04-06 E. I. Du Pont De Nemours & Company Crystals of (K, Rb, NH4)TiO(P, As)O4 and their use in electrooptic devices
US4231838A (en) * 1978-04-20 1980-11-04 E. I. Du Pont De Nemours And Company Method for flux growth of KTiOPO4 and its analogues
US4640736A (en) * 1980-10-02 1987-02-03 Xerox Corporation Wave guide fabrication method
US4761202A (en) * 1986-05-30 1988-08-02 U.S. Philips Corporation Process for crystal growth of KTiOPO4 from solution
US4766954A (en) * 1987-01-08 1988-08-30 E. I. Du Pont De Nemours And Company Process for producing an optical waveguide
US5015328A (en) * 1989-09-14 1991-05-14 North American Philips Corporation Method of reducing surface damage in KTP optical waveguides
US5066356A (en) * 1990-01-05 1991-11-19 E. I. Du Pont De Nemours And Company Hydrothermal process for growing optical-quality single crystals
US5084206A (en) * 1990-02-02 1992-01-28 E. I. Du Pont De Nemours And Company Doped crystalline compositions and a method for preparation thereof

Also Published As

Publication number Publication date
JP3289905B2 (ja) 2002-06-10
EP0633952B1 (de) 1996-05-15
WO1993020265A3 (en) 1994-03-31
EP0633952A1 (de) 1995-01-18
DE69302683T2 (de) 1996-11-28
WO1993020265A2 (en) 1993-10-14
JPH07505354A (ja) 1995-06-15
US5411723A (en) 1995-05-02

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee