DE69207695D1 - Verfahren zur Herstellung von Kalium-Lithium-Niobatkristallen - Google Patents

Verfahren zur Herstellung von Kalium-Lithium-Niobatkristallen

Info

Publication number
DE69207695D1
DE69207695D1 DE69207695T DE69207695T DE69207695D1 DE 69207695 D1 DE69207695 D1 DE 69207695D1 DE 69207695 T DE69207695 T DE 69207695T DE 69207695 T DE69207695 T DE 69207695T DE 69207695 D1 DE69207695 D1 DE 69207695D1
Authority
DE
Germany
Prior art keywords
production
lithium niobate
niobate crystals
potassium lithium
potassium
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69207695T
Other languages
English (en)
Other versions
DE69207695T2 (de
Inventor
Lucas J A M Beckers
J F M Cillesen
Martin Ouwerkerk
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Electronics NV filed Critical Philips Electronics NV
Publication of DE69207695D1 publication Critical patent/DE69207695D1/de
Application granted granted Critical
Publication of DE69207695T2 publication Critical patent/DE69207695T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B9/00—Single-crystal growth from melt solutions using molten solvents
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C30B29/30—Niobates; Vanadates; Tantalates
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
DE69207695T 1991-10-01 1992-09-25 Verfahren zur Herstellung von Kalium-Lithium-Niobatkristallen Expired - Fee Related DE69207695T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP91202551 1991-10-01

Publications (2)

Publication Number Publication Date
DE69207695D1 true DE69207695D1 (de) 1996-02-29
DE69207695T2 DE69207695T2 (de) 1996-07-25

Family

ID=8207917

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69207695T Expired - Fee Related DE69207695T2 (de) 1991-10-01 1992-09-25 Verfahren zur Herstellung von Kalium-Lithium-Niobatkristallen

Country Status (6)

Country Link
US (1) US5322592A (de)
EP (1) EP0535738B1 (de)
JP (1) JP3403212B2 (de)
KR (1) KR100218067B1 (de)
DE (1) DE69207695T2 (de)
TW (1) TW293038B (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08339002A (ja) * 1995-04-10 1996-12-24 Ngk Insulators Ltd 第二高調波発生素子およびその製造方法
US7670435B2 (en) * 2001-03-30 2010-03-02 Technologies And Devices International, Inc. Apparatus for epitaxially growing semiconductor device structures with sharp layer interfaces utilizing HVPE
US20030205193A1 (en) * 2001-07-06 2003-11-06 Melnik Yuri V. Method for achieving low defect density aigan single crystal boules
US20070032046A1 (en) * 2001-07-06 2007-02-08 Dmitriev Vladimir A Method for simultaneously producing multiple wafers during a single epitaxial growth run and semiconductor structure grown thereby
US6613143B1 (en) 2001-07-06 2003-09-02 Technologies And Devices International, Inc. Method for fabricating bulk GaN single crystals
US7501023B2 (en) * 2001-07-06 2009-03-10 Technologies And Devices, International, Inc. Method and apparatus for fabricating crack-free Group III nitride semiconductor materials
US6616757B1 (en) 2001-07-06 2003-09-09 Technologies And Devices International, Inc. Method for achieving low defect density GaN single crystal boules
US6936357B2 (en) * 2001-07-06 2005-08-30 Technologies And Devices International, Inc. Bulk GaN and ALGaN single crystals
US20060011135A1 (en) * 2001-07-06 2006-01-19 Dmitriev Vladimir A HVPE apparatus for simultaneously producing multiple wafers during a single epitaxial growth run
US8647435B1 (en) 2006-10-11 2014-02-11 Ostendo Technologies, Inc. HVPE apparatus and methods for growth of p-type single crystal group III nitride materials

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3423686A (en) * 1967-07-11 1969-01-21 Bell Telephone Labor Inc Optical devices utilizing substantially tetragonal ferroelectric tungsten-bronzes
US3971938A (en) * 1973-03-05 1976-07-27 Hare Louis Richard O Method of generating electricity from radiant energy called variable polarizability capacity generator
US4879722A (en) * 1987-07-27 1989-11-07 Amoco Corporation Generation of coherent optical radiation by optical mixing
US4884276A (en) * 1987-11-25 1989-11-28 Amoco Corporation Optical feedback control in the frequency conversion of laser diode radiation
US4933947A (en) * 1988-02-18 1990-06-12 Amoco Corporation Frequency conversion of optical radiation
NL8901875A (nl) * 1989-07-20 1991-02-18 Philips Nv Kalium-lithium niobaat kristallen.
NL9002410A (nl) * 1990-11-06 1992-06-01 Philips Nv Inrichting voor het verdubbelen van de frequentie van een lichtgolf.
US5038352A (en) * 1990-11-13 1991-08-06 International Business Machines Incorporation Laser system and method using a nonlinear crystal resonator

Also Published As

Publication number Publication date
KR100218067B1 (ko) 1999-09-01
KR930007838A (ko) 1993-05-20
EP0535738A2 (de) 1993-04-07
JPH05238896A (ja) 1993-09-17
EP0535738B1 (de) 1996-01-17
JP3403212B2 (ja) 2003-05-06
US5322592A (en) 1994-06-21
DE69207695T2 (de) 1996-07-25
EP0535738A3 (en) 1993-12-29
TW293038B (de) 1996-12-11

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: KONINKLIJKE PHILIPS ELECTRONICS N.V., EINDHOVEN, N

8339 Ceased/non-payment of the annual fee