DE69207695D1 - Verfahren zur Herstellung von Kalium-Lithium-Niobatkristallen - Google Patents
Verfahren zur Herstellung von Kalium-Lithium-NiobatkristallenInfo
- Publication number
- DE69207695D1 DE69207695D1 DE69207695T DE69207695T DE69207695D1 DE 69207695 D1 DE69207695 D1 DE 69207695D1 DE 69207695 T DE69207695 T DE 69207695T DE 69207695 T DE69207695 T DE 69207695T DE 69207695 D1 DE69207695 D1 DE 69207695D1
- Authority
- DE
- Germany
- Prior art keywords
- production
- lithium niobate
- niobate crystals
- potassium lithium
- potassium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B9/00—Single-crystal growth from melt solutions using molten solvents
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
- C30B29/22—Complex oxides
- C30B29/30—Niobates; Vanadates; Tantalates
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP91202551 | 1991-10-01 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69207695D1 true DE69207695D1 (de) | 1996-02-29 |
DE69207695T2 DE69207695T2 (de) | 1996-07-25 |
Family
ID=8207917
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69207695T Expired - Fee Related DE69207695T2 (de) | 1991-10-01 | 1992-09-25 | Verfahren zur Herstellung von Kalium-Lithium-Niobatkristallen |
Country Status (6)
Country | Link |
---|---|
US (1) | US5322592A (de) |
EP (1) | EP0535738B1 (de) |
JP (1) | JP3403212B2 (de) |
KR (1) | KR100218067B1 (de) |
DE (1) | DE69207695T2 (de) |
TW (1) | TW293038B (de) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08339002A (ja) * | 1995-04-10 | 1996-12-24 | Ngk Insulators Ltd | 第二高調波発生素子およびその製造方法 |
US7670435B2 (en) * | 2001-03-30 | 2010-03-02 | Technologies And Devices International, Inc. | Apparatus for epitaxially growing semiconductor device structures with sharp layer interfaces utilizing HVPE |
US20030205193A1 (en) * | 2001-07-06 | 2003-11-06 | Melnik Yuri V. | Method for achieving low defect density aigan single crystal boules |
US20070032046A1 (en) * | 2001-07-06 | 2007-02-08 | Dmitriev Vladimir A | Method for simultaneously producing multiple wafers during a single epitaxial growth run and semiconductor structure grown thereby |
US6613143B1 (en) | 2001-07-06 | 2003-09-02 | Technologies And Devices International, Inc. | Method for fabricating bulk GaN single crystals |
US7501023B2 (en) * | 2001-07-06 | 2009-03-10 | Technologies And Devices, International, Inc. | Method and apparatus for fabricating crack-free Group III nitride semiconductor materials |
US6616757B1 (en) | 2001-07-06 | 2003-09-09 | Technologies And Devices International, Inc. | Method for achieving low defect density GaN single crystal boules |
US6936357B2 (en) * | 2001-07-06 | 2005-08-30 | Technologies And Devices International, Inc. | Bulk GaN and ALGaN single crystals |
US20060011135A1 (en) * | 2001-07-06 | 2006-01-19 | Dmitriev Vladimir A | HVPE apparatus for simultaneously producing multiple wafers during a single epitaxial growth run |
US8647435B1 (en) | 2006-10-11 | 2014-02-11 | Ostendo Technologies, Inc. | HVPE apparatus and methods for growth of p-type single crystal group III nitride materials |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3423686A (en) * | 1967-07-11 | 1969-01-21 | Bell Telephone Labor Inc | Optical devices utilizing substantially tetragonal ferroelectric tungsten-bronzes |
US3971938A (en) * | 1973-03-05 | 1976-07-27 | Hare Louis Richard O | Method of generating electricity from radiant energy called variable polarizability capacity generator |
US4879722A (en) * | 1987-07-27 | 1989-11-07 | Amoco Corporation | Generation of coherent optical radiation by optical mixing |
US4884276A (en) * | 1987-11-25 | 1989-11-28 | Amoco Corporation | Optical feedback control in the frequency conversion of laser diode radiation |
US4933947A (en) * | 1988-02-18 | 1990-06-12 | Amoco Corporation | Frequency conversion of optical radiation |
NL8901875A (nl) * | 1989-07-20 | 1991-02-18 | Philips Nv | Kalium-lithium niobaat kristallen. |
NL9002410A (nl) * | 1990-11-06 | 1992-06-01 | Philips Nv | Inrichting voor het verdubbelen van de frequentie van een lichtgolf. |
US5038352A (en) * | 1990-11-13 | 1991-08-06 | International Business Machines Incorporation | Laser system and method using a nonlinear crystal resonator |
-
1992
- 1992-09-25 EP EP92202946A patent/EP0535738B1/de not_active Expired - Lifetime
- 1992-09-25 DE DE69207695T patent/DE69207695T2/de not_active Expired - Fee Related
- 1992-09-28 US US07/952,024 patent/US5322592A/en not_active Expired - Fee Related
- 1992-09-28 JP JP25822392A patent/JP3403212B2/ja not_active Expired - Fee Related
- 1992-09-30 KR KR1019920017877A patent/KR100218067B1/ko not_active IP Right Cessation
- 1992-10-30 TW TW081108669A patent/TW293038B/zh active
Also Published As
Publication number | Publication date |
---|---|
KR100218067B1 (ko) | 1999-09-01 |
KR930007838A (ko) | 1993-05-20 |
EP0535738A2 (de) | 1993-04-07 |
JPH05238896A (ja) | 1993-09-17 |
EP0535738B1 (de) | 1996-01-17 |
JP3403212B2 (ja) | 2003-05-06 |
US5322592A (en) | 1994-06-21 |
DE69207695T2 (de) | 1996-07-25 |
EP0535738A3 (en) | 1993-12-29 |
TW293038B (de) | 1996-12-11 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8327 | Change in the person/name/address of the patent owner |
Owner name: KONINKLIJKE PHILIPS ELECTRONICS N.V., EINDHOVEN, N |
|
8339 | Ceased/non-payment of the annual fee |