DE69229717T2 - Matrix von Graben-DRAM-Zellen - Google Patents

Matrix von Graben-DRAM-Zellen

Info

Publication number
DE69229717T2
DE69229717T2 DE69229717T DE69229717T DE69229717T2 DE 69229717 T2 DE69229717 T2 DE 69229717T2 DE 69229717 T DE69229717 T DE 69229717T DE 69229717 T DE69229717 T DE 69229717T DE 69229717 T2 DE69229717 T2 DE 69229717T2
Authority
DE
Germany
Prior art keywords
dram cell
cell matrix
trench dram
trench
matrix
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69229717T
Other languages
English (en)
Other versions
DE69229717D1 (de
Inventor
Gary Bela Bronner
Sang Hoo Dhong
Wei Hwang
Jong Woo Park
Steven Howard Voldman
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US07/818,668 external-priority patent/US5250829A/en
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of DE69229717D1 publication Critical patent/DE69229717D1/de
Publication of DE69229717T2 publication Critical patent/DE69229717T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/37—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate
DE69229717T 1992-01-09 1992-12-24 Matrix von Graben-DRAM-Zellen Expired - Fee Related DE69229717T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US81915992A 1992-01-09 1992-01-09
US07/818,668 US5250829A (en) 1992-01-09 1992-01-09 Double well substrate plate trench DRAM cell array

Publications (2)

Publication Number Publication Date
DE69229717D1 DE69229717D1 (de) 1999-09-09
DE69229717T2 true DE69229717T2 (de) 2000-03-02

Family

ID=27124292

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69229717T Expired - Fee Related DE69229717T2 (de) 1992-01-09 1992-12-24 Matrix von Graben-DRAM-Zellen

Country Status (3)

Country Link
EP (1) EP0550894B1 (de)
DE (1) DE69229717T2 (de)
SG (1) SG45211A1 (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5360758A (en) * 1993-12-03 1994-11-01 International Business Machines Corporation Self-aligned buried strap for trench type DRAM cells
US5595925A (en) * 1994-04-29 1997-01-21 Texas Instruments Incorporated Method for fabricating a multiple well structure for providing multiple substrate bias for DRAM device formed therein
EP0735581A1 (de) * 1995-03-30 1996-10-02 Siemens Aktiengesellschaft DRAM-Grabenkondensator mit isolierendem Ring
US5908310A (en) * 1995-12-27 1999-06-01 International Business Machines Corporation Method to form a buried implanted plate for DRAM trench storage capacitors
US6265741B1 (en) * 1998-04-06 2001-07-24 Siemens Aktiengesellschaft Trench capacitor with epi buried layer
DE19843641A1 (de) 1998-09-23 2000-04-20 Siemens Ag Grabenkondensator mit Isolationskragen und entsprechendes Herstellungsverfahren
DE19937504A1 (de) 1999-08-09 2001-03-15 Infineon Technologies Ag Verfahren zur Herstellung einer Isolation
DE10133874A1 (de) * 2001-07-12 2003-02-20 Infineon Technologies Ag Speicherzelle mit einem zweiten Transistor zum Halten eines Ladungswertes
US20240113102A1 (en) * 2022-09-30 2024-04-04 Texas Instruments Incorporated Buried trench capacitor

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0224213A3 (de) * 1985-11-22 1987-10-28 Nec Corporation Halbleiterspeichervorrichtung
GB2199695B (en) * 1987-01-06 1990-07-25 Samsung Semiconductor Inc Dynamic random access memory with selective well biasing
JPS63258060A (ja) * 1987-04-15 1988-10-25 Nec Corp 半導体記憶装置
JP2509690B2 (ja) * 1989-02-20 1996-06-26 株式会社東芝 半導体装置
US5021852A (en) * 1989-05-18 1991-06-04 Texas Instruments Incorporated Semiconductor integrated circuit device

Also Published As

Publication number Publication date
SG45211A1 (en) 1998-01-16
EP0550894A1 (de) 1993-07-14
EP0550894B1 (de) 1999-08-04
DE69229717D1 (de) 1999-09-09

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee