DE69227797T2 - Vorrichtung und Verfahren zur Teilung bzw. Kombination von Mikrowellenenergie einer ungeraden Anzahl von Transistor-Chips - Google Patents

Vorrichtung und Verfahren zur Teilung bzw. Kombination von Mikrowellenenergie einer ungeraden Anzahl von Transistor-Chips

Info

Publication number
DE69227797T2
DE69227797T2 DE69227797T DE69227797T DE69227797T2 DE 69227797 T2 DE69227797 T2 DE 69227797T2 DE 69227797 T DE69227797 T DE 69227797T DE 69227797 T DE69227797 T DE 69227797T DE 69227797 T2 DE69227797 T2 DE 69227797T2
Authority
DE
Germany
Prior art keywords
dividing
odd number
microwave energy
transistor chips
combining microwave
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69227797T
Other languages
English (en)
Other versions
DE69227797D1 (de
Inventor
Chandra Khandavalli
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Application granted granted Critical
Publication of DE69227797D1 publication Critical patent/DE69227797D1/de
Publication of DE69227797T2 publication Critical patent/DE69227797T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/60—Amplifiers in which coupling networks have distributed constants, e.g. with waveguide resonators
    • H03F3/602—Combinations of several amplifiers
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04J—MULTIPLEX COMMUNICATION
    • H04J1/00—Frequency-division multiplex systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
    • H01L2224/49175—Parallel arrangements

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Signal Processing (AREA)
  • Microwave Amplifiers (AREA)
  • Waveguides (AREA)
  • Amplifiers (AREA)
  • Semiconductor Integrated Circuits (AREA)
DE69227797T 1991-05-01 1992-04-06 Vorrichtung und Verfahren zur Teilung bzw. Kombination von Mikrowellenenergie einer ungeraden Anzahl von Transistor-Chips Expired - Fee Related DE69227797T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/694,127 US5132641A (en) 1991-05-01 1991-05-01 Apparatus and method for dividing/combining microwave power from an odd number of transistor chips

Publications (2)

Publication Number Publication Date
DE69227797D1 DE69227797D1 (de) 1999-01-21
DE69227797T2 true DE69227797T2 (de) 1999-04-29

Family

ID=24787513

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69227797T Expired - Fee Related DE69227797T2 (de) 1991-05-01 1992-04-06 Vorrichtung und Verfahren zur Teilung bzw. Kombination von Mikrowellenenergie einer ungeraden Anzahl von Transistor-Chips

Country Status (6)

Country Link
US (1) US5132641A (de)
EP (1) EP0511522B1 (de)
JP (1) JPH088460B2 (de)
KR (1) KR950012576B1 (de)
CA (1) CA2067655A1 (de)
DE (1) DE69227797T2 (de)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07297609A (ja) * 1994-04-28 1995-11-10 Nec Yamagata Ltd 半導体装置
KR100381685B1 (ko) * 1994-08-15 2003-07-10 텍사스 인스트루먼츠 인코포레이티드 리액티브보상전력트랜지스터회로
US5528203A (en) * 1994-09-26 1996-06-18 Endgate Corporation Coplanar waveguide-mounted flip chip
US5942957A (en) * 1994-09-26 1999-08-24 Endgate Corporation Flip-mounted impedance
DE19830522A1 (de) 1998-07-08 2000-01-13 Pritt Produktionsgesellschaft Vorrichtung zum Übertragen eines in Form eines Filmes auf ein Trägerband aufgebrachten Stoffes
US6259335B1 (en) * 1999-08-10 2001-07-10 Trw Inc. Combining network to implement a power amplifier having monolithically integrated planar interconnect and transistors
US6587013B1 (en) 2000-02-16 2003-07-01 Signal Technology Corporation RF power combiner circuit with spaced capacitive stub
US6545564B1 (en) 2000-04-25 2003-04-08 Signal Technology Corporation RF signal divider
FR2822298A1 (fr) * 2001-03-19 2002-09-20 Sagem Dispositif de couplage hyperfrequence de trois circuits
JP2004228989A (ja) * 2003-01-23 2004-08-12 Renesas Technology Corp 半導体装置
JP2012156362A (ja) * 2011-01-27 2012-08-16 Fujitsu Ltd 伝送線路、集積回路搭載装置および通信機モジュール
GB201105912D0 (en) * 2011-04-07 2011-05-18 Diamond Microwave Devices Ltd Improved matching techniques for power transistors

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4129839A (en) * 1977-03-09 1978-12-12 Raytheon Company Radio frequency energy combiner or divider
FR2545295B1 (fr) * 1983-04-29 1985-07-12 Thomson Csf Amplificateur hyperfrequence de puissance
JPS6140024U (ja) * 1984-08-17 1986-03-13 三菱電機株式会社 高出力増幅器
US4835496A (en) * 1986-05-28 1989-05-30 Hughes Aircraft Company Power divider/combiner circuit
JPS63208314A (ja) * 1987-02-24 1988-08-29 Mitsubishi Electric Corp 内部整合形半導体装置
GB2222488A (en) * 1988-08-31 1990-03-07 Philips Electronic Associated Broad bandwidth planar power combiner/divider device
US4975659A (en) * 1989-06-22 1990-12-04 Gte Laboratories Incorporated Amplifier package using vertical power transistors with ungrounded common terminals
DE69022332T2 (de) * 1989-08-04 1996-05-02 Matsushita Electric Ind Co Ltd Anpassungsnetzwerk für Hochfrequenz-Transistor.
JP2579371B2 (ja) * 1989-10-20 1997-02-05 富士通株式会社 高周波信号用の電力分配／合成器

Also Published As

Publication number Publication date
JPH05191177A (ja) 1993-07-30
KR950012576B1 (ko) 1995-10-19
DE69227797D1 (de) 1999-01-21
EP0511522B1 (de) 1998-12-09
US5132641A (en) 1992-07-21
KR920022712A (ko) 1992-12-19
CA2067655A1 (en) 1992-11-02
JPH088460B2 (ja) 1996-01-29
EP0511522A1 (de) 1992-11-04

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee