DE69227602D1 - Photoelektrischer Wandler und Bildverarbeitungsgerät denselben verwended - Google Patents

Photoelektrischer Wandler und Bildverarbeitungsgerät denselben verwended

Info

Publication number
DE69227602D1
DE69227602D1 DE69227602T DE69227602T DE69227602D1 DE 69227602 D1 DE69227602 D1 DE 69227602D1 DE 69227602 T DE69227602 T DE 69227602T DE 69227602 T DE69227602 T DE 69227602T DE 69227602 D1 DE69227602 D1 DE 69227602D1
Authority
DE
Germany
Prior art keywords
same
image processing
processing device
device used
photoelectric converter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69227602T
Other languages
English (en)
Other versions
DE69227602T2 (de
Inventor
Hiraku Kozuka
Shigetoshi Sugawa
Ihachiro Gofuku
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Publication of DE69227602D1 publication Critical patent/DE69227602D1/de
Application granted granted Critical
Publication of DE69227602T2 publication Critical patent/DE69227602T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/197—Bipolar transistor image sensors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells
DE69227602T 1991-01-11 1992-01-10 Photoelektrischer Wandler und Bildverarbeitungsgerät denselben verwended Expired - Fee Related DE69227602T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3012596A JP2765635B2 (ja) 1991-01-11 1991-01-11 光電変換装置

Publications (2)

Publication Number Publication Date
DE69227602D1 true DE69227602D1 (de) 1998-12-24
DE69227602T2 DE69227602T2 (de) 1999-06-17

Family

ID=11809733

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69227602T Expired - Fee Related DE69227602T2 (de) 1991-01-11 1992-01-10 Photoelektrischer Wandler und Bildverarbeitungsgerät denselben verwended

Country Status (5)

Country Link
US (1) US5245201A (de)
EP (1) EP0494694B1 (de)
JP (1) JP2765635B2 (de)
CA (1) CA2058778C (de)
DE (1) DE69227602T2 (de)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5821563A (en) * 1990-12-25 1998-10-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device free from reverse leakage and throw leakage
US7253437B2 (en) 1990-12-25 2007-08-07 Semiconductor Energy Laboratory Co., Ltd. Display device having a thin film transistor
CA2113499C (en) * 1993-01-19 1999-10-19 Yoshio Uchikata Ink jet recording apparatus provided with means for calculating waste ink amount, and information processing system provided with such an ink jet recording apparatus
KR100294026B1 (ko) * 1993-06-24 2001-09-17 야마자끼 순페이 전기광학장치
US5818052A (en) * 1996-04-18 1998-10-06 Loral Fairchild Corp. Low light level solid state image sensor
US5844265A (en) * 1996-07-11 1998-12-01 Synaptics, Incorporated Sense amplifier for high-density imaging array
US5838176A (en) * 1996-07-11 1998-11-17 Foveonics, Inc. Correlated double sampling circuit
JP4027465B2 (ja) * 1997-07-01 2007-12-26 株式会社半導体エネルギー研究所 アクティブマトリクス型表示装置およびその製造方法
DE19737561C1 (de) * 1997-08-28 1999-04-15 Forschungszentrum Juelich Gmbh Mehrfarbensensor
US5952686A (en) * 1997-12-03 1999-09-14 Hewlett-Packard Company Salient integration mode active pixel sensor
JPH11274454A (ja) 1998-03-19 1999-10-08 Canon Inc 固体撮像装置及びその形成方法
US6114739A (en) * 1998-10-19 2000-09-05 Agilent Technologies Elevated pin diode active pixel sensor which includes a patterned doped semiconductor electrode
US6018187A (en) * 1998-10-19 2000-01-25 Hewlett-Packard Cmpany Elevated pin diode active pixel sensor including a unique interconnection structure
US6586812B1 (en) * 1999-04-13 2003-07-01 Agilent Technologies, Inc. Isolation of alpha silicon diode sensors through ion implantation
US6713796B1 (en) 2001-01-19 2004-03-30 Dalsa, Inc. Isolated photodiode
JP4667030B2 (ja) * 2004-12-10 2011-04-06 キヤノン株式会社 固体撮像装置用の半導体基板とその製造方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4523214A (en) * 1981-07-03 1985-06-11 Fuji Photo Film Co., Ltd. Solid state image pickup device utilizing microcrystalline and amorphous silicon
JPS5840985A (ja) * 1981-09-04 1983-03-10 Hitachi Ltd 固体撮像素子
JPS6047574A (ja) * 1983-08-26 1985-03-14 Toshiba Corp 固体撮像装置
JPS60161664A (ja) * 1984-02-01 1985-08-23 Sharp Corp 密着型二次元画像読取装置
US4878097A (en) * 1984-05-15 1989-10-31 Eastman Kodak Company Semiconductor photoelectric conversion device and method for making same
JPS6149569A (ja) * 1984-08-17 1986-03-11 Matsushita Electronics Corp 固体撮像装置
JPS61216358A (ja) * 1985-03-20 1986-09-26 Fuji Electric Co Ltd 視覚センサ
DE3856165T2 (de) * 1987-01-29 1998-08-27 Canon Kk Photovoltaischer Wandler
DE68927845T2 (de) * 1988-09-30 1997-08-07 Kanegafuchi Chemical Ind Sonnenzelle mit einer durchsichtigen Elektrode
JPH02275670A (ja) * 1989-01-18 1990-11-09 Canon Inc 光電変換装置および画像読取装置

Also Published As

Publication number Publication date
CA2058778A1 (en) 1992-07-12
EP0494694A3 (en) 1992-07-29
EP0494694B1 (de) 1998-11-18
EP0494694A2 (de) 1992-07-15
JP2765635B2 (ja) 1998-06-18
JPH04271174A (ja) 1992-09-28
US5245201A (en) 1993-09-14
CA2058778C (en) 1996-07-16
DE69227602T2 (de) 1999-06-17

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee