DE69226004T2 - Bootstrapschaltung zum Treiben von einem Leistungs-MOS-Transistor in einem Erhöhungsmode - Google Patents

Bootstrapschaltung zum Treiben von einem Leistungs-MOS-Transistor in einem Erhöhungsmode

Info

Publication number
DE69226004T2
DE69226004T2 DE69226004T DE69226004T DE69226004T2 DE 69226004 T2 DE69226004 T2 DE 69226004T2 DE 69226004 T DE69226004 T DE 69226004T DE 69226004 T DE69226004 T DE 69226004T DE 69226004 T2 DE69226004 T2 DE 69226004T2
Authority
DE
Germany
Prior art keywords
driving
mos transistor
power mos
boost mode
bootstrap circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69226004T
Other languages
English (en)
Other versions
DE69226004D1 (de
Inventor
Michele Zisa
Massimiliano Belluso
Mario Paparo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SRL
CORIMME Consorzio per Ricerca Sulla Microelettronica nel Mezzogiorno
Original Assignee
CORIMME Consorzio per Ricerca Sulla Microelettronica nel Mezzogiorno
SGS Thomson Microelectronics SRL
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CORIMME Consorzio per Ricerca Sulla Microelettronica nel Mezzogiorno, SGS Thomson Microelectronics SRL filed Critical CORIMME Consorzio per Ricerca Sulla Microelettronica nel Mezzogiorno
Publication of DE69226004D1 publication Critical patent/DE69226004D1/de
Application granted granted Critical
Publication of DE69226004T2 publication Critical patent/DE69226004T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/06—Modifications for ensuring a fully conducting state
    • H03K17/063—Modifications for ensuring a fully conducting state in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/6877—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the control circuit comprising active elements different from those used in the output circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/01—Modifications for accelerating switching
    • H03K19/017—Modifications for accelerating switching in field-effect transistor circuits
    • H03K19/01707—Modifications for accelerating switching in field-effect transistor circuits in asynchronous circuits
    • H03K19/01714—Modifications for accelerating switching in field-effect transistor circuits in asynchronous circuits by bootstrapping, i.e. by positive feed-back

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Electronic Switches (AREA)
  • Power Conversion In General (AREA)
  • Manipulation Of Pulses (AREA)
  • Amplifiers (AREA)
  • Logic Circuits (AREA)
DE69226004T 1991-07-24 1992-07-17 Bootstrapschaltung zum Treiben von einem Leistungs-MOS-Transistor in einem Erhöhungsmode Expired - Fee Related DE69226004T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
ITMI912045A IT1251097B (it) 1991-07-24 1991-07-24 Circuito di bootstrap per il pilotaggio di un transistore mos di potenza in configurazione high side driver.

Publications (2)

Publication Number Publication Date
DE69226004D1 DE69226004D1 (de) 1998-07-30
DE69226004T2 true DE69226004T2 (de) 1999-02-11

Family

ID=11360419

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69226004T Expired - Fee Related DE69226004T2 (de) 1991-07-24 1992-07-17 Bootstrapschaltung zum Treiben von einem Leistungs-MOS-Transistor in einem Erhöhungsmode

Country Status (5)

Country Link
US (1) US5381044A (de)
EP (1) EP0525869B1 (de)
JP (1) JP3528854B2 (de)
DE (1) DE69226004T2 (de)
IT (1) IT1251097B (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19929728A1 (de) * 1999-06-29 2001-02-08 Infineon Technologies Ag Schaltungsanordnung zur Ansteuerung eines Motors

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5726594A (en) * 1995-10-02 1998-03-10 Siliconix Incorporated Switching device including power MOSFET with internal power supply circuit
JP3607033B2 (ja) * 1997-03-31 2005-01-05 三菱電機株式会社 半導体装置
DE19728283A1 (de) * 1997-07-02 1999-01-07 Siemens Ag Ansteuerschaltung für ein steuerbares Halbleiterbauelement
US6169431B1 (en) 1998-06-02 2001-01-02 Infineon Technologies Ag Drive circuit for a controllable semiconductor component
US6798269B2 (en) * 2000-07-25 2004-09-28 Stmicroelectronics S.R.L. Bootstrap circuit in DC/DC static converters
US7129678B2 (en) * 2002-01-25 2006-10-31 Victory Industrial Corporation High voltage generator using inductor-based charge pump for automotive alternator voltage regulator
US6781422B1 (en) 2003-09-17 2004-08-24 System General Corp. Capacitive high-side switch driver for a power converter
US6836173B1 (en) 2003-09-24 2004-12-28 System General Corp. High-side transistor driver for power converters
US7405595B2 (en) * 2005-11-16 2008-07-29 System General Corp. High-side transistor driver having positive feedback for improving speed and power saving
US8044685B2 (en) * 2006-06-12 2011-10-25 System General Corp. Floating driving circuit

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4049979A (en) * 1976-08-24 1977-09-20 National Semiconductor Corporation Multi-bootstrap driver circuit
JPS56129570A (en) * 1980-03-14 1981-10-09 Mitsubishi Electric Corp Booster circuit
US4484092A (en) * 1982-03-22 1984-11-20 Motorola, Inc. MOS Driver circuit having capacitive voltage boosting
JPS58184821A (ja) * 1982-03-31 1983-10-28 Fujitsu Ltd 昇圧回路
JPS5922444A (ja) * 1982-07-28 1984-02-04 Nec Corp 駆動回路
JPS5958920A (ja) * 1982-09-28 1984-04-04 Fujitsu Ltd バツフア回路
EP0126788B1 (de) * 1983-05-27 1987-06-03 Deutsche ITT Industries GmbH MOS-Bootstrap-Gegentaktstufe
US4680488A (en) * 1983-06-15 1987-07-14 Nec Corporation MOSFET-type driving circuit with capacitive bootstrapping for driving a large capacitive load at high speed
DE3329093A1 (de) * 1983-08-11 1985-02-28 Siemens AG, 1000 Berlin und 8000 München Dynamischer mos-schaltkreis
JPS61260717A (ja) * 1985-05-14 1986-11-18 Mitsubishi Electric Corp 半導体昇圧信号発生回路
US4906056A (en) * 1987-04-14 1990-03-06 Mitsubishi Denki Kabushiki Kaisha High speed booster circuit
JPS641323A (en) * 1987-06-24 1989-01-05 Hitachi Ltd Switching regulator
IT1221251B (it) * 1988-02-25 1990-06-27 Sgs Thomson Microelectronics Circuito mos per il pilotaggio di un carico dal lato alto della alimentazione
IT1227561B (it) * 1988-11-07 1991-04-16 Sgs Thomson Microelectronics Dispositivo circuitale, a ridotto numero di componenti, per l'accensione simultanea di una pluralita' di transistori di potenza

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19929728A1 (de) * 1999-06-29 2001-02-08 Infineon Technologies Ag Schaltungsanordnung zur Ansteuerung eines Motors
DE19929728B4 (de) * 1999-06-29 2015-08-06 Infineon Technologies Ag Schaltungsanordnung zur Ansteuerung eines Motors

Also Published As

Publication number Publication date
DE69226004D1 (de) 1998-07-30
IT1251097B (it) 1995-05-04
EP0525869A1 (de) 1993-02-03
ITMI912045A1 (it) 1993-01-25
US5381044A (en) 1995-01-10
EP0525869B1 (de) 1998-06-24
JPH05252006A (ja) 1993-09-28
ITMI912045A0 (it) 1991-07-24
JP3528854B2 (ja) 2004-05-24

Similar Documents

Publication Publication Date Title
DE68925160D1 (de) Ladungspumpenschaltung mit Induktivität und Kapazität zum Treiben von Leistungs-MOS-Transistorbrücken
KR860700189A (ko) 전계효과 트랜지스터용 무변압기 구동회로
DE69101386D1 (de) Strommess-Schaltung in einem MOS-Leistungstransistor.
DE69600911T2 (de) Isolierte Gate-Transistor-Ansteuerschaltung
DE69413438T2 (de) Spannung-Erhöhungsschaltung
KR960702944A (ko) 저 전압형 트랜지스터를 사용하는 고 전압 전하 펌프(high voltage charge pump using low voltage type transistors)
IT8822952A0 (it) Generatore di segnali di pilotaggio per transistori connessi in configurazione a semiponte
DE69027240D1 (de) Steuerschaltung für einen MOS-Leistungstransistor mit induktiver Last
DE69311691D1 (de) Leistungsversorgungsschaltung
DE69321171D1 (de) Gate-Treiberschaltung für einen MOS-Leistungstransistor
DE68912617D1 (de) Spannungsseitige MOS-Treiberschaltung.
DE69226004D1 (de) Bootstrapschaltung zum Treiben von einem Leistungs-MOS-Transistor in einem Erhöhungsmode
DE59301809D1 (de) Schaltungsanordnung zum ansteuern eines mos-feldeffekttransistors
DE69123234D1 (de) Steuerschaltung für einen zwangskommutierten Leistungstransistor
DE69410067T2 (de) Transistorschaltung
DE69512551D1 (de) Integrierter Speicher mit Spaltenspannungserhaltungsschaltung
DE59308057D1 (de) Ansteuerschaltung für einen Leistungs-MOSFET mit sourceseitiger Last
DE3882773D1 (de) Leistungstransistortreiberschaltung.
IT1224644B (it) Circuito per il mantenimento in conduzione di un transistore mos in mancanza di tensione di alimentazione elettrica.
DE69529331T2 (de) Treiberschaltung mit Ladungspumpe für einen Leistungstransistor
DE69304189D1 (de) Treiberschaltung für einen Feldeffekttransistor in einer Halbbrückenausgangsstufe
DE69429970D1 (de) Transistorschaltung
DE59608908D1 (de) Schaltungsanordnung zum Ansteuern eines Leistungs-Enhancement-MOSFET
DE59302472D1 (de) Treiberschaltung für einen Leistungstransistor
KR940004441U (ko) 자동차 발전기용 부트스트랩을 이용한 mos 페트 구동회로

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee