DE69224541D1 - Verfahren und Gebrauch einer Vorrichtung zur Dampfphasen-Abscheidung - Google Patents
Verfahren und Gebrauch einer Vorrichtung zur Dampfphasen-AbscheidungInfo
- Publication number
- DE69224541D1 DE69224541D1 DE69224541T DE69224541T DE69224541D1 DE 69224541 D1 DE69224541 D1 DE 69224541D1 DE 69224541 T DE69224541 T DE 69224541T DE 69224541 T DE69224541 T DE 69224541T DE 69224541 D1 DE69224541 D1 DE 69224541D1
- Authority
- DE
- Germany
- Prior art keywords
- vapor phase
- phase deposition
- deposition
- vapor
- phase
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000000034 method Methods 0.000 title 1
- 238000001947 vapour-phase growth Methods 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/10—Heating of the reaction chamber or the substrate
- C30B25/105—Heating of the reaction chamber or the substrate by irradiation or electric discharge
-
- H01L21/205—
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
- C23C16/482—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation using incoherent light, UV to IR, e.g. lamps
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/08—Germanium
Landscapes
- Chemical & Material Sciences (AREA)
- Metallurgy (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Mechanical Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3056931A JP2680202B2 (ja) | 1991-03-20 | 1991-03-20 | 気相成長方法及び装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69224541D1 true DE69224541D1 (de) | 1998-04-09 |
DE69224541T2 DE69224541T2 (de) | 1998-11-12 |
Family
ID=13041260
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69224541T Expired - Fee Related DE69224541T2 (de) | 1991-03-20 | 1992-03-19 | Verfahren und Gebrauch einer Vorrichtung zur Dampfphasen-Abscheidung |
Country Status (4)
Country | Link |
---|---|
EP (1) | EP0504886B1 (de) |
JP (1) | JP2680202B2 (de) |
KR (1) | KR100311893B1 (de) |
DE (1) | DE69224541T2 (de) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6951804B2 (en) | 2001-02-02 | 2005-10-04 | Applied Materials, Inc. | Formation of a tantalum-nitride layer |
US6878206B2 (en) | 2001-07-16 | 2005-04-12 | Applied Materials, Inc. | Lid assembly for a processing system to facilitate sequential deposition techniques |
US20090004850A1 (en) | 2001-07-25 | 2009-01-01 | Seshadri Ganguli | Process for forming cobalt and cobalt silicide materials in tungsten contact applications |
US9051641B2 (en) | 2001-07-25 | 2015-06-09 | Applied Materials, Inc. | Cobalt deposition on barrier surfaces |
US7085616B2 (en) | 2001-07-27 | 2006-08-01 | Applied Materials, Inc. | Atomic layer deposition apparatus |
US6866746B2 (en) | 2002-01-26 | 2005-03-15 | Applied Materials, Inc. | Clamshell and small volume chamber with fixed substrate support |
US6911391B2 (en) | 2002-01-26 | 2005-06-28 | Applied Materials, Inc. | Integration of titanium and titanium nitride layers |
US6868859B2 (en) | 2003-01-29 | 2005-03-22 | Applied Materials, Inc. | Rotary gas valve for pulsing a gas |
US6994319B2 (en) | 2003-01-29 | 2006-02-07 | Applied Materials, Inc. | Membrane gas valve for pulsing a gas |
JP4618705B2 (ja) * | 2003-09-18 | 2011-01-26 | 大日本スクリーン製造株式会社 | 熱処理装置 |
JP2005093858A (ja) * | 2003-09-19 | 2005-04-07 | Dainippon Screen Mfg Co Ltd | 熱処理装置 |
TWI365519B (en) * | 2003-12-19 | 2012-06-01 | Mattson Tech Canada Inc | Apparatuses and methods for suppressing thermally induced motion of a workpiece |
JP2006294750A (ja) * | 2005-04-07 | 2006-10-26 | Toshiba Corp | 薄膜堆積装置及び方法 |
CN101448977B (zh) | 2005-11-04 | 2010-12-15 | 应用材料股份有限公司 | 用于等离子体增强的原子层沉积的设备和工艺 |
WO2007140455A2 (en) * | 2006-05-31 | 2007-12-06 | Tegal Corporation | System and method for semiconductor processing |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5994829A (ja) * | 1982-11-22 | 1984-05-31 | Nec Corp | 半導体装置の製造方法 |
JPS6016416A (ja) * | 1983-07-08 | 1985-01-28 | Hitachi Ltd | 気相成長装置 |
JPS60227858A (ja) * | 1984-04-27 | 1985-11-13 | Asahi Okuma Ind Co Ltd | エアレス塗装機のノズル詰まり検知装置 |
JPH0766906B2 (ja) * | 1984-07-26 | 1995-07-19 | 新技術事業団 | GaAsエピタキシャル成長方法 |
JPH0642456B2 (ja) * | 1984-11-21 | 1994-06-01 | 株式会社日立製作所 | 表面光処理方法 |
JPH0618173B2 (ja) * | 1986-06-19 | 1994-03-09 | 日本電気株式会社 | 薄膜形成方法 |
JPS6355929A (ja) * | 1986-08-26 | 1988-03-10 | Sumitomo Electric Ind Ltd | 半導体薄膜の製造方法 |
JPH02208925A (ja) * | 1989-02-09 | 1990-08-20 | Nippon Telegr & Teleph Corp <Ntt> | 半導体膜の形成方法 |
JPH04235282A (ja) * | 1991-01-09 | 1992-08-24 | Toshiba Corp | 光cvd法及び光cvd装置 |
JPH04254499A (ja) * | 1991-02-06 | 1992-09-09 | Fujitsu Ltd | 化合物半導体結晶の製造方法 |
-
1991
- 1991-03-20 JP JP3056931A patent/JP2680202B2/ja not_active Expired - Fee Related
-
1992
- 1992-03-16 KR KR1019920004239A patent/KR100311893B1/ko not_active IP Right Cessation
- 1992-03-19 EP EP92104795A patent/EP0504886B1/de not_active Expired - Lifetime
- 1992-03-19 DE DE69224541T patent/DE69224541T2/de not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
KR920018831A (ko) | 1992-10-22 |
EP0504886A1 (de) | 1992-09-23 |
EP0504886B1 (de) | 1998-03-04 |
JP2680202B2 (ja) | 1997-11-19 |
JPH04291916A (ja) | 1992-10-16 |
KR100311893B1 (ko) | 2001-12-15 |
DE69224541T2 (de) | 1998-11-12 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |