DE69220620T2 - Verfahren zur hydrothermischen Züchtung von Kristallen aus mittels Impfkristallen zusammengesetzten Blättern - Google Patents
Verfahren zur hydrothermischen Züchtung von Kristallen aus mittels Impfkristallen zusammengesetzten BlätternInfo
- Publication number
- DE69220620T2 DE69220620T2 DE69220620T DE69220620T DE69220620T2 DE 69220620 T2 DE69220620 T2 DE 69220620T2 DE 69220620 T DE69220620 T DE 69220620T DE 69220620 T DE69220620 T DE 69220620T DE 69220620 T2 DE69220620 T2 DE 69220620T2
- Authority
- DE
- Germany
- Prior art keywords
- laminae
- crystal
- crystals
- seed
- quartz
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/14—Phosphates
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
- C30B29/18—Quartz
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/901—Levitation, reduced gravity, microgravity, space
- Y10S117/902—Specified orientation, shape, crystallography, or size of seed or substrate
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Cultivation Of Plants (AREA)
- Agricultural Chemicals And Associated Chemicals (AREA)
- Re-Forming, After-Treatment, Cutting And Transporting Of Glass Products (AREA)
- Silicates, Zeolites, And Molecular Sieves (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR9106271A FR2676753B1 (fr) | 1991-05-24 | 1991-05-24 | Procede d'accroissement des dimensions des cristaux elaborables par croissance hydrothermale, utilisant un germe obtenu par assemblage de lames cristallines. |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69220620D1 DE69220620D1 (de) | 1997-08-07 |
DE69220620T2 true DE69220620T2 (de) | 1998-01-29 |
Family
ID=9413095
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69220620T Expired - Fee Related DE69220620T2 (de) | 1991-05-24 | 1992-05-22 | Verfahren zur hydrothermischen Züchtung von Kristallen aus mittels Impfkristallen zusammengesetzten Blättern |
Country Status (7)
Country | Link |
---|---|
US (1) | US5377615A (de) |
EP (1) | EP0515288B1 (de) |
JP (1) | JPH07187872A (de) |
AT (1) | ATE154955T1 (de) |
CA (1) | CA2069203A1 (de) |
DE (1) | DE69220620T2 (de) |
FR (1) | FR2676753B1 (de) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5714005A (en) * | 1995-12-20 | 1998-02-03 | Motorola Inc. | ST-cut and AT-cut oriented seed bodies for quartz crystal synthesis and method for making the same |
AT408456B (de) * | 1999-12-28 | 2001-12-27 | Avl List Gmbh | Verfahren zum züchten von einkristallen |
CN100363253C (zh) * | 2006-06-26 | 2008-01-23 | 山东大学 | 一种助熔剂生长磷酸铝晶体的方法 |
JP6083474B2 (ja) | 2013-08-29 | 2017-02-22 | 株式会社村田製作所 | 人工水晶の育成方法 |
DE102020117213A1 (de) * | 2020-06-30 | 2021-12-30 | Schott Ag | Glaskeramikartikel, Verfahren zu dessen Herstellung und dessen Verwendung |
EP4144893A1 (de) | 2021-09-06 | 2023-03-08 | Instytut Wysokich Cisnien Polskiej Akademii Nauk | Verfahren zur verminderung oder beseitigung von rissen während des kristallzüchtungsprozesses und ein metallformteil zur verwendung in diesem verfahren |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2931712A (en) * | 1955-05-27 | 1960-04-05 | Clevite Corp | Method of growing synthetic quartz |
GB827501A (en) * | 1955-05-27 | 1960-02-03 | Clevite Corp | Method and apparatus for growing quartz |
GB2079175B (en) * | 1980-06-26 | 1983-12-07 | Gen Electric Co Ltd | Growing crystals |
US4578146A (en) * | 1983-04-28 | 1986-03-25 | Allied Corporation | Process for growing a large single crystal from multiple seed crystals |
-
1991
- 1991-05-24 FR FR9106271A patent/FR2676753B1/fr not_active Expired - Fee Related
-
1992
- 1992-05-22 AT AT92401416T patent/ATE154955T1/de not_active IP Right Cessation
- 1992-05-22 CA CA002069203A patent/CA2069203A1/fr not_active Abandoned
- 1992-05-22 DE DE69220620T patent/DE69220620T2/de not_active Expired - Fee Related
- 1992-05-22 US US07/887,088 patent/US5377615A/en not_active Expired - Fee Related
- 1992-05-22 EP EP92401416A patent/EP0515288B1/de not_active Expired - Lifetime
- 1992-05-25 JP JP4132270A patent/JPH07187872A/ja not_active Withdrawn
Also Published As
Publication number | Publication date |
---|---|
JPH07187872A (ja) | 1995-07-25 |
ATE154955T1 (de) | 1997-07-15 |
EP0515288A1 (de) | 1992-11-25 |
EP0515288B1 (de) | 1997-07-02 |
FR2676753B1 (fr) | 1993-10-01 |
FR2676753A1 (fr) | 1992-11-27 |
DE69220620D1 (de) | 1997-08-07 |
US5377615A (en) | 1995-01-03 |
CA2069203A1 (fr) | 1992-11-25 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |